Julien Barjon, Université de Versailles Saint-Quentin-en-Yvelines, France
Julien Barjon obtained his PhD in 2002 at Grenoble Institute of Technology (INPG), France, on the subject of electron-beam-pumped lasers made of GaN semiconductor quantum dots. After a postdoctoral position on the crystal growth of III-V compounds by molecular beam epitaxy at CHREA-CNRS, Sophia Antipolis, he joined the Université de Versailles St-Quentin-en-Yvelines (UVSQ) as an associate professor in 2004. Since then, he has been investigating the optical and electrical activity of dopants in diamond, a topic for which he developed a nano-cathodoluminescence instrument at GEMaC, CNRS-UVSQ laboratory. His current research interests deal with the physical properties of wide bandgap semiconductors and their nanostructures, including ZnO nanowires, BN nanotubes, and atomic layers of boron nitride.