Semiconductor Nanodevices

Semiconductor Nanodevices

Physics, Technology and Applications

1st Edition - October 24, 2021

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  • Editor: David Ritchie
  • Paperback ISBN: 9780128220832
  • eBook ISBN: 9780128220849

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Semiconductor Nanodevices: Physics, Technology and Applications explores recent advances in the field. The behaviour of these devices is controlled by regions of nanoscale dimensions which typically determine the local density of electronic states and lead to the observation of a range of quantum effects with significant potential for exploitation. The book opens with an introduction describing the development of this research field over the past few decades which contrasts quantum-controlled devices to conventional nanoscale electronic devices where an emphasis has often been placed on minimising quantum effects. This introduction is followed by seven chapters describing electrical nanodevices and five chapters describing opto-electronic nanodevices; individual chapters review important recent advances. These chapters include specific fabrication details for the structures and devices described as well as a discussion of the physics made accessible. It is an important reference source for physicists, materials scientists and engineers who want to learn more about how semiconductor-based nanodevices are being developed for both science and potential industrial applications. The section on electrical devices includes chapters describing the study of electron correlation effects using transport in quantum point contacts and tunnelling between one-dimensional wires; the high-frequency pumping of single electrons; thermal effects in quantum dots; the use of silicon quantum dot devices for qubits and quantum computing; transport in topological insulator nanoribbons and a comprehensive discussion of noise in electrical nanodevices. The optical device section describes the use of self-assembled III-V semiconductor nanostructures embedded in devices for a range of applications, including quantum dots for single and entangled photon sources, quantum dots and nanowires in lasers and quantum dots in solar cells.

Key Features

  • Explores the major industrial applications of semiconductor nanodevices
  • Explains fabrication techniques for the production of semiconductor nanodevices
  • Assesses the challenges for the mass production of semiconductor nanodevices


Materials scientists and engineers

Table of Contents

  • Cover image
  • Title page
  • Table of Contents
  • Frontiers of Nanoscience
  • Copyright
  • Contributors
  • Chapter One. Introduction, background and contents
  • Chapter Two. Advances in interaction effects in the quasi one-dimensional electron gas
  • 1. Introduction
  • 2. Experimental
  • 3. Quantum transport properties of 1D devices
  • Chapter Three. Semiconductor nanodevices as a probe of strong electron correlations
  • 1. The failure of Fermi liquid theory
  • 2. Early results on Tomonaga–Luttinger liquid behaviour
  • 3. Beyond the linear Tomonaga–Luttinger liquid approximation
  • 4. Recent work on nonlinear effects
  • 5. Other work on 1D interaction effects
  • 6. Conclusion
  • Chapter Four. Thermoelectric properties of a quantum dot
  • 1. Landauer–Büttiker formalism of thermoelectricity
  • 2. The quantum dot model
  • 3. Quantum limit
  • 4. Coulomb oscillations and thermopower
  • 5. The effect of degeneracy
  • 6. Power factor and figure of merit
  • 7. Violation of the Wiedemann–Franz law
  • 8. Nonlinear regime
  • 9. Output power and efficiency
  • 10. Applications
  • 11. Summary
  • Chapter Five. Single-electron sources
  • 1. Types of single-electron source
  • 2. Quantum current standard
  • 3. Electron quantum optics
  • 4. Summary
  • Chapter six. Noise measurements in semiconductor nanodevices
  • 1. Introduction
  • 2. The physics of quantum shot noise
  • 3. Noise measurement techniques
  • 4. Shot noise in semiconductor nanodevices
  • 5. Conclusion
  • Chapter Seven. Electrical and superconducting transport in topological insulator nanoribbons
  • 1. Introduction
  • 2. Overview of electrical transport in TI
  • 3. Electrical transport in TI nanoribbons
  • 4. Superconducting transport in TI nanoribbons
  • 5. Summary and outlook
  • Chapter Eight. Silicon qubit devices
  • 1. Introduction
  • 2. Fabrication
  • 3. Silicon spin qubits
  • 4. Future developments
  • Chapter Nine. Electrical control of semiconductor quantum dot single photon sources
  • 1. Introduction and motivation
  • 2. Diode designs for single quantum dot photon sources
  • 3. Control of internal energy levels in quantum dots
  • 4. Hybrid approaches to control of quantum dots
  • 5. Future directions
  • Chapter Ten. Semiconductor quantum dot solar cells
  • 1. Introduction
  • 2. Drift-diffusion analysis of quantum efficiency in QD-IBSCs
  • 3. Improvement of carrier collection efficiency in QDSCs using field-damping layers
  • 4. FTIR spectroscopy of TSPA processes in QDSCs
  • 5. Conclusion
  • Chapter Eleven. Monolithic III–V quantum dot lasers on silicon
  • 1. Introduction
  • 2. Advantages of quantum dot lasers on silicon
  • 3. Heteroepitaxial growth of III–V on silicon
  • 4. Current status of III–V quantum dot lasers on silicon
  • 5. Future directions of quantum dot lasers on Si
  • 6. Conclusion
  • Chapter Twelve. Physics and applications of semiconductor nanowire lasers
  • 1. Introduction
  • 2. Lasers
  • 3. Nanowires as laser elements
  • 4. Contemporary topics in nanowire laser technology
  • 5. State of the art and outlook
  • Chapter Thirteen. Nitride single photon sources
  • 1. Introduction
  • 2. Basic principles of quantum dot fabrication
  • 3. Basic properties of quantum dots for single photon emission
  • 4. Strengths and weaknesses of nitride quantum dot single photon sources
  • 5. Single photon sources based on defects in nitrides
  • 6. Outlook
  • Index

Product details

  • No. of pages: 498
  • Language: English
  • Copyright: © Elsevier 2021
  • Published: October 24, 2021
  • Imprint: Elsevier
  • Paperback ISBN: 9780128220832
  • eBook ISBN: 9780128220849

About the Editor

David Ritchie

David Ritchie is Professor of Experimental Physics and Head of the Semiconductor Physics group. He is also a Fellow and Director of Studies in Physics at Robinson College, Cambridge. His research focuses on semiconductor physics and has extensive experience of the growth, fabrication and measurement of low dimensional electronic and optical structures.

Affiliations and Expertise

Professor of Experimental Physics and Head of Semiconductor Physics, University of Cambridge, Cavendish Laboratory, Cambridge,UK

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