Handbook of Ion Beam Processing Technology

1st Edition

Principles, Deposition, Film Modification and Synthesis



Deals with ion beam processing for basic sputter etching of samples, sputter deposition of thin films, the synthesis of material in thin film form, and the modification of the properties of thin films.


Engineers, technicians, and plant personnel in the semiconductor and related industries.

Table of Contents

1. Perspective on Past, Present and Future Uses of Ion Beam Technology 1.1 Introduction 1.2 Past Technology 1.3 Present Capabilities 1.4 Future Trends 1.5 References Part I. Ion Beam Technology 2. Gridded Broad-beam Ion Sources 2.1 Introduction 2.2 General Description 2.3 Discharge Chamber 2.4 Ion Optics 2.5 Production Applications 2.6 Target Contamination 2.7 Concluding Remarks 2.8 References 3. ECR Ion Sources 3.1 Introduction 3.2 Theory of Operation 3.3 Types of Sources and Characteristics 3.4 Etching 3.5 Deposition 3.6 References 4. Hall Effect Ion Sources 4.1 Introduction 4.2 End-hall Ion Source 4.3 Closed Drift Ion Source 4.4 Concluding Remarks 4.5 References 5. Ionized Cluster Beam (ICB) Deposition and Epitaxy 5.1 Introduction 5.2 Experiment 5.3 Aspects of Film Deposition with ICB 5.4 Summary 5.5 References Part II. Sputtering Phenomena 6. Quantitative Sputtering 6.1 Introduction 6.2 Total Sputter Yield Considerations 6.3 Differential Sputter Yield Considerations 6.4 Experimental Considerations for Sputter Yield Measurements 6.5 Total Sputter Yield Measurements 6.6 Differential Yield Measurements: Angular and Energy Distributions 6.7 Concluding Remarks 6.8 References 7. Laser-induced Fluorescence as a Tool for the Study of Ion Beam Sputtering 7.1 Introduction 7.2 Experimental Techniq


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© 1989
William Andrew
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