COVID-19 Update: We are currently shipping orders daily. However, due to transit disruptions in some geographies, deliveries may be delayed. To provide all customers with timely access to content, we are offering 50% off Science and Technology Print & eBook bundle options. Terms & conditions.
Ultrawide Bandgap Semiconductors - 1st Edition - ISBN: 9780128228708

Ultrawide Bandgap Semiconductors, Volume 107

1st Edition

Serial Volume Editor: Yuji Zhao
Hardcover ISBN: 9780128228708
Imprint: Academic Press
Published Date: 1st August 2021
Page Count: 422
Sales tax will be calculated at check-out Price includes VAT/GST

Institutional Subscription

Secure Checkout

Personal information is secured with SSL technology.

Free Shipping

Free global shipping
No minimum order.

Table of Contents

1. Gallium oxide power devices
Masataka Higashiwaki
2. Advanced concepts in Ga2O3 power and RF devices
Huili Grace Xing
3. Material epitaxy, doping, and transport properties of (Al,Ga)2O3 alloys and heterostructures
Siddharth Rajan
4. Thermal science and engineering of Ga2O3 materials and devices
Samuel Graham
5. Controlling different phases of gallium oxide for solar blind photodetector and power electronics applications
Haiding Sun
6. Nanoscale AlGaN and BN: epitaxy, properties and device application
Zetian Mi
7. High-Al content AlGaN heterostrutures and devices
Robert Kaplar
8. AlN nonlinear optics and integrated photonics
Hong Tang
9. Material epitaxy of AlN thin films
Xinqiang Wang
10. AlGaN/GaN MEMS devices for extreme harsh environments
Debbie Senesky
11. Supercontinuum generation in AlN waveguides
Yuji Zhao
12. Thin film ultraviolet laser diodes and light emitting diodes
Haiding Sun
13. Materials science and devices applications of diamond
Robert J. Nemanich
14. Electrical transport properties of h-BN
Jingyu Lin and Hongxing Jiang
15. Ultrawide Bandgap Semiconductors
Yuji Zhao and Zetian Mi
16. Boron nitride quantum photonics
Lee Bassett


Description

Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored.

Key Features

  • Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices
  • Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices
  • Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials

Readership

Scientists and engineers performing fundamental and applied research and technology development in the field of ultrawide bandgap semiconductors. Students, researchers and practitioners working in the field of semiconductors, thermal, electronic, photonic and quantum devices


Details

No. of pages:
422
Language:
English
Copyright:
© Academic Press 2021
Published:
1st August 2021
Imprint:
Academic Press
Hardcover ISBN:
9780128228708

Ratings and Reviews


About the Serial Volume Editor

Yuji Zhao

Yuji Zhao

Yuji Zhao is an Assistant Professor of Electrical Engineering at Arizona State University (ASU), where he leads the GaN research efforts at ASU. He received the Ph.D degree from University of California Santa Barbara (UCSB) in 2012 under the supervision of Nobel Laureate Professor Shuji Nakamura. Prof. Zhao’s research interests are in the field of wide bandgap materials and devices for applications in power electronics, RF and power ICs, and quantum photonics. He has authored/co-authored more than 140 journal and conference publications, 3 book chapters, and over 20 patents. Prof. Zhao is the receipt of 2019 Presidential Early Career Award for Scientists and Engineers, 2017 ASU Fulton Outstanding Assistant Professor Award, 2016 DTRA Young Investigator Award, 2015 NASA Early Career Faculty Award, 2015 SFAz Bisgrove Scholar Faculty Award, and 2010–2013 UCSB SSLEC Outstanding Research Award. He has served as a technical committee member for various international conferences such as CLEO, ECS Meeting, International Conference on Crystal Growth and Epitaxy, International Symposium on Semiconductor Lighting Emitting Devices, etc. Prof. Zhao is a member of IEEE and MRS.

Affiliations and Expertise

Arizona State University, USA