Description

Thin film technology is used in many applications such as microelectronics, optics, hard and corrosion resistant coatings and micromechanics, and thin films form a uniquely versatile material base for the development of novel technologies within these industries. Thin film growth provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin films.

Part one focuses on the theory of thin film growth, with chapters covering nucleation and growth processes in thin films, phase-field modelling of thin film growth and surface roughness evolution. Part two covers some of the techniques used for thin film growth, including oblique angle deposition, reactive magnetron sputtering and epitaxial growth of graphene films on single crystal metal surfaces. This section also includes chapters on the properties of thin films, covering topics such as substrate plasticity and buckling of thin films, polarity control, nanostructure growth dynamics and network behaviour in thin films.

With its distinguished editor and international team of contributors, Thin film growth is an essential reference for engineers in electronics, energy materials and mechanical engineering, as well as those with an academic research interest in the topic.

Key Features

  • Provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin films
  • Focusses on the theory and modelling of thin film growth, techniques and mechanisms used for thin film growth and properties of thin films
  • An essential reference for engineers in electronics, energy materials and mechanical engineering

Readership

Engineers in electronics, energy materials and mechanical engineering, as well as those with an academic research interest in the topic.

Table of Contents

Contributor contact details

Praface

Part I: Theory of thin film growth

Chapter 1: Measuring nucleation and growth processes in thin films

Abstract:

1.1 Introduction

1.2 Basic theory of epitaxial growth

1.3 Observation method of atomic steps

1.4 Two-dimensional-island nucleation and step-flow growth modes

1.5 The motion of atomic steps on a growing and evaporating Si(111) surface

1.6 Morphological instability of atomic steps

1.7 Conclusion and future trends

1.9 Appendix

Chapter 2: Quantum electronic stability of atomically uniform films

Abstract:

2.1 Introduction

2.2 Electronic growth

2.3 Angle-resolved photoemission spectroscopy

2.4 Atomically uniform films

2.5 Quantum thermal stability of thin films

2.6 General principles of film stability and nanostructure development

2.7 Beyond the particle-in-a-box

2.8 Future trends

2.9 Acknowledgments

Chapter 3: Phase-field modeling of thin film growth

Abstract:

3.1 Introduction

3.2 Modeling

3.3 Numerical results

3.4 Conclusion

Chapter 4: Analysing surface roughness evolution in thin films

Abstract:

4.1 Introduction

4.2 Roughness during homo-epitaxial growth

4.3 Roughness during hetero- or non-epitaxial growth

4.4 Future trends

Chapter 5: Modelling thin film deposition processes based on real-time observation

Abstract:

5.1 Introduction: time resolved surface science

5.2 Basics of growth and relevant length of and timescales for in-situ observation of film deposition

5.3 Experimental techniques for real-time and in-situ studies

5.4 Experimental case studies

5.5 Future trends

5.6 Sources of further information and advice

Part II: Techniques of thin film growth

Chapter 6:

Details

No. of pages:
432
Language:
English
Copyright:
© 2011
Published:
Imprint:
Woodhead Publishing
Print ISBN:
9781845697365
Electronic ISBN:
9780857093295

About the editor

Zexian Cao

Zexian Cao is a Professor at the Institute of Physics of the Chinese Academy of Sciences in Beijing, China.