Thermal Management of Gallium Nitride Electronics

Thermal Management of Gallium Nitride Electronics

1st Edition - June 24, 2022

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  • Editors: Marko Tadjer, Travis Anderson
  • Paperback ISBN: 9780128210840

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Description

Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs.

Key Features

  • Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods
  • Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies
  • Touches on emerging, real-world applications for thermal management strategies in power electronics

Readership

Materials Scientists and Engineers; Mechanical Engineers; Electrical Engineers

Table of Contents

  • 1. Heating issues in wide-bandgap semiconductor devices
    2. First principles thermal transport in GaN and related materials
    3. Heat transport in polycrystalline diamond from the meso to the nano scale
    4. Understanding Thermal Transport across Interfaces
    5. Upper limits to thermal conductance across gallium nitride interfaces: predictions and measurements
    6. AlGaN/GaN HEMT Device Physics and Electro-Thermal Modeling
    7. Modeling of thermal phenomena in GaN devices
    8. Device-level modeling and simulation of AlGaN/GaN HEMTs
    9. Gate Resistance Thermometry: an electrical thermal characterization technique
    10. Thermal characteristics of superlattice castellated FETs
    11. The transient Thermoreflectance Approach for high-resolution temperature mapping of GaN devices
    12. Fundamentals of CTE-matched QST substrate technology
    13. Reduced-Stress Nanocrystalline Diamond for Heat Spreading in Electronic Devices
    14. GaN-on-diamond materials and device technology: a review
    15. Three-Dimensional Integration of Diamond and GaN
    16. Room-Temperature Bonded Thermally Conductive Semiconductor Interfaces
    17. Direct low-temperature bonding of AlGaN/GaN thin film devices onto diamond substrates
    18. Microfluidic cooling for GaN electronic devices
    19. Thermal Effects in Ga2O3 Rectifiers and MOSFETs-Borrowing from GaN

Product details

  • No. of pages: 516
  • Language: English
  • Copyright: © Woodhead Publishing 2022
  • Published: June 24, 2022
  • Imprint: Woodhead Publishing
  • Paperback ISBN: 9780128210840

About the Editors

Marko Tadjer

Dr. Marko J. Tadjer is a civilian staff scientist at the U.S. Naval Research Laboratory, Washington DC. He received a Ph.D. in Electrical Engineering from the University of Maryland, College Park in 2010, a Master of Science in Electrical Engineering from Duke University in 2004, and undergraduate degrees in Electrical and Computer Engineering from the University of Arkansas in 2002. His research in power devices focuses on the integration of materials with attractive properties such as diamond with more mature GaN and SiC technology, as well as exploring novel oxides such as Ga2O3 for power electronics applications.

Affiliations and Expertise

Electronics Engineer, Naval Research Laboratory, Washington DC, USA

Travis Anderson

Travis J. Anderson is a civilian staff scientist at the U.S. Naval Research Laboratory. He received a Ph.D. in Chemical Engineering from the University of Florida in 2008, and a B.S. in Chemical Engineering from the Georgia Institute of Technology in 2004.

Affiliations and Expertise

Senior Chemical Engineer, Naval Research Laboratory, Washington DC, USA

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