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The Physics of SiO2 and Its Interfaces - 1st Edition - ISBN: 9780080230498, 9781483139005

The Physics of SiO2 and Its Interfaces

1st Edition

Proceedings of the International Topical Conference on the Physics of SiO2 and Its Interfaces Held at the IBM Thomas J. Waston Research Center, Yorktown Heights, New York, March 22-24, 1978

Editor: Sokrates T. Pantelides
eBook ISBN: 9781483139005
Imprint: Pergamon
Published Date: 1st January 1978
Page Count: 500
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The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.

Table of Contents

Chapter I: Transport Properties and Tunneling

Electronic Properties of Vitreous Silicon Dioxide

Small Polaron Formation and Motion of Holes in a-Si02

Field Dependent Hole Transport in Amorphous Si02

Exciton Transport in Si02

High-Electric Field Transport of Electrons in Si02

Electron Emission from Silicon Dioxide Into Vacuum

Electron Transport in Silicon Oxynitride

The Nature of Electron Tunneling in Si02

Evidence for a Band Tail on the Conduction Band Edge of Thermal Si02 from Photon-Assisted Tunneling Measurements

Chapter II: Electronic Structure and Spectra

Electronic Structure of Crystalline and Amorphous Si02

Electronic Structure of α-Quartz and the Influence of Some Local Disorder: A Tight-binding Study

Electronic Structure Investigations of Two Allotropie Forms of Si02: α-Quartz and β-Cristobalite

Band Structures and Electronic Properties of Si02

K X-ray Spectra of Amorphous and Crystalline Si02

The Optical-Absorption Spectrum of Si02

Inelastic Electron Scattering in Si02

Electronic Structure of Si02 from Electron Energy Loss Spectroscopy

The Absorption and Photoconductivity Spectra of Vitreous Si02

Calculated and Measured Auger Lineshapes in Si02

Is Silicon Dioxide Covalent or Ionic?

Chemical Bond and Related Properties of Si02

Topological Effects on the Band Structure of Silica

Chapter III: Thermal and Structural Properties

Heat Pulse Experiments on Vitreous Si02 in the Temperature Range 2.5-300K

Thermal Conductivity of Si02

Neutron Diffraction by Vitreous Silica

Raman Spectra and Atomic Configurations of Vitreous Silica

Electrostriction and Piezoelectricity of Thermally Grown Si02 Films

Critical Need for S(k,ω) Determinations in Amorphous Si02: Calculation of Physical Properties Via Frozen Liquid Phonons

Properties of Localized Silicon-Dioxide Clusters in Layers of Disordered Silicon on Silver

Chapter IV: Defects and Impurities in Thermal Si02

The Properties of Electron and Hole Traps in Thermal Si02 Layers Grown on Silicon

Dynamic Behavior of Mobile Ions in Si02 Layers

Photo-injection Studies of Traps in HC1/H20 Oxides

Photodepopulation of Electrons Trapped in Si02 on Sites Related to As and P Implantation

Chemical State of Phosphorus in Deposited Si02(P) Films

Spectroscopic and Structural Properties of Nitrogen-Doped Low-Temperature Si02 Films

Some Observations of Defects in Amorphous Si02 Films

Measurement of Hydrogen Profiles in Si02 by a Nuclear Reaction Technique

Interaction of Dissolved Molecular Hydrogen with a Vitreous Silica Host

Hydrogen in Si02 Films on Silicon

ESR Centers and Charge Defects Near the Si/Si02 Interface

Chapter V: Defects and Impurities in α-Quartz and Fused Silica

Defects and Impurities in α-Quartz and Fused Silica

A Germanium Tri-Hydrogen Center in α-Quartz

Electron Paramagnetic Resonance Studies on Al Centers in Vitreous Silica

Oxygen-Associated Trapped Hole Centers in High-Purity Fused Silica

A Model for Point Defects in Silica

Auger Spectra of Si02 Surface Defect Centers

Vibrational and Electronic Spectroscopy of Ion-Implantation-Induced

Defects in Fused Silica and Crystalline Quartz

Raman Studies of Structural Defects in Vitreous Si02

Cathodoluminescence Studies of Si02 - Na, Cl, Ge, Cu, Au, and Oxygen Vacancy Results

Anomalous Dielectric Absorption in Si02-Based Glasses

XPS Study of Sodium Oxide in Amorphous Si02

Modification of SiOx

Intrinsic Surface Phonons in Porous Glass

Positronium-Surface Interaction in the Pores of Vycor Glass

Ion Irradiation and Stored Energy in Vitreous Si02

Chapter VI: Electronic Structure of the Si-Si02 Interface

Electronic States of Si-Si02 Interfaces

The Defect Structure of the Si-Si02 Interface, A Model Based on Trivalent Silicon and Its Hydrogen "Compounds"

Electronic Structure of a Model Si-Si02 Interface

Chapter VII: The Stoichiometry of the Si-Si02 Interface

Continuous-Random-Network Models for the Si-Si02 Interface

Studies of the Si-Si02 Interface by MeV Ion Scattering

Transmission Electron Microscopy of Microstructural Defects in Si-Si02 Systems - Si Clusters in Si02 Film

A High-Resolution Electron Microscopy Study of the Si-Si02 Interface

Structure of the Si-Si02 Interface by Internal Photoemission

Auger Sputter Profiling Studies of the Si-Si02 Interface

Auger Analysis of the Si02/Si Interface of Ultrathin Oxides

Studies of Si/Si02 Interfaces and Si02 by XPS

X-ray Photoelectron Spectroscopy of Si02-Si Interfacial Regions

Chemical Structure of the Transitional Region of the Si02/Si Interface

MOS Solar Cell as a Tool to Study the Transition Region

Associated with Ultra Thin Films of SiOx

Chapter VIII: Interface Properties

Initial Stages of Si02 Formation on Si(111)

The Si-Si02 Interface and Localization in the Inversion Layer

Metastabilities at the Si-SiOx Interface

Photocapacitance Probing of Si-Si02 Interface States

Transient Capacitance Measurements of Electronic States at the SiOz-Si Interface

Interface States Resulting from a Hole Flux Incident on the Si02/Si Interface

The Influence of the pH on the Surface State Density at the Si02-Si Interface

The Si-Si02 Interface: Oxide Charge, Electron Affinity and Fast Surface States

Lateral Nonuniformities (LNU) of Oxide and Interface State Charge

Temperature Dependence of Relaxation of Injected Charge at the PolycrystalIine-SUicon/Si02 Interface

Effects of Ultra-thin SiOx in Conducting M-I-S Structures

Confirmation of Hydrogen Surface States at the Si-Si02 Interface

Electrical Properties of Si02-Si Interface for Deformed Si Surfaces

Shear Strength of Metal-Si02 Contacts

List of Participants

Author Index


No. of pages:
© Pergamon 1978
1st January 1978
eBook ISBN:

About the Editor

Sokrates T. Pantelides

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