The Gunn-Hilsum Effect

Preface List of Symbols Chapter 1 Negative Differential Mobility in Semiconductors 1-1 Introduction 1-2 The Velocity-Electric Field Characteristic 1-3 Response of an NDM Element to a Charge Fluctuation 1-4 Summary References Chapter 2 The NDM Element's Environment: Circuits and Boundaries 2-1 Introduction 2-2 The Local Environment 2-3 The Circuit 2-4 The Boundaries References Chapter 3 The Behavior of an NDM Element in a Circuit 3-1 Introduction 3-2 Summary of Results 3-3 Understanding the Threshold ConditionChapter 4 Numerical Studies of Negative Differential Mobility Elements 4-1 Introduction 4-2 Governing Equations 4-3 Difference Equations 4-4 Illustrative Resistive Circuit Calculations 4-5 Illustrative Calculations with a Circuit Containing Reactive Elements 4-6 Short Samples and Dynamic Cathode Boundary Fields References Chapter 5 Experimental Studies of Long Bulk NDM Samples at Low Frequencies 5-1 Introduction 5-2 Techniques of Sample Preparation for Bulk Samples 5-3 A Typical Gunn-Hilsum Effect Experiment with Long Bulk Samples of n-GaAs 5-4 Experimental Results and Discussion References Chapter 6 Analytical Studies of NDM Element Behavior: Small Signal Analysis 6-1 Introduction 6-2 Time-Independent Computations 6-3 Small Signal Time-Dependent Computations 6-4 Summary Appendix A Integration of the Field Perturbation Equation Appendix Β Impedance Calculation for Uniform ε(x) and Nonuniform δε (x, t) Appendix C Impedance Calculation for Nonuniform ε(x) and δε (x, t) Appendix D Relation between Ζc(ω) and δε(Δ,ω) Appendix Ε Equality of limω→αΖ(ω) and l'-1 dϕ/djo, Where ϕ is Defined by Eq. 6-11 ReferencesChapter 7 Negative Differential Mobility Devices 7-1 Introduction 7-2 Device Construction 7-3 Oscillation Principles for Short Devices 7-4 Amplification 7-5 The Gunn Diode in a Microwave Circuit 7-6 State-of-the-Art Considerations: Noise and Output Power 7-7 Summary References Author Index Subject Index