Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics.
The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces.
The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed.
The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.
Dependence of Electronic Properties on Surface Geometry
Electronic Properties and Surface Geometry of GaAs and ZnO Surfaces
Electronic Structure of Si(111) Surfaces
Photoemission Studies of Surface States on Si(111) 2 × l
Si(111) 2 × 1 Studies by Angle Resolved Photoemission
The π-Bonded Chain Model for Si(111)-(2 × 1) in View of Recent Wavevector-Resolved Electron Energy Loss Spectra
The Mott Insulator Model of the Si(111)-(2 × 1) Surface
Electronic Surface States at Steps in Si(111) 2 × l
A Novel Method for the Study of Optical Properties of Surfaces
Low Temperature Leed and Electric Conductivity Measurements for Cleaved Si(111) Surfaces
Spot Profile Analysis (LEED) of Defects at Silicon Surfaces
Chemisorption-Induced Defects at Interfaces on Compound Semiconductors
Surface Defects on Semiconductors
Transition from Chemisorption to Stable Interface Structure
The Formation of Interfaces on GaAs and Related Semiconductors: A Reassessment
Physics and Electronics of the Noble-Metal/Elemental-Semiconductor Interface Formation: A Status Report
Local Structure of Adsorbates on Semiconductor Surfaces Using SEXAFS: A Brief Summary
Systematics of Schottky Barriers
Systematics of Chemical Structure and Schottky Barriers at Compound Semiconductor-Metal Interfaces
Schottky Barriers: Model and "Tests"
Schottky Barrier Amorphous-Crystalline Interface Formation
Computer Modeling of High Barrier Schottky Diodes Applied to Study of the Accuracy of Experimental Barrier Determination
Silicide Interface Structure
Microscopic Properties and Behavior of Suicide Interfaces
The Electron States in the Si(111
- No. of pages:
- © North Holland 1983
- 1st January 1983
- North Holland
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