Description

Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.

Table of Contents


Preface

Introduction

Dependence of Electronic Properties on Surface Geometry

Electronic Properties and Surface Geometry of GaAs and ZnO Surfaces

Electronic Structure of Si(111) Surfaces

Photoemission Studies of Surface States on Si(111) 2 × l

Si(111) 2 × 1 Studies by Angle Resolved Photoemission

The π-Bonded Chain Model for Si(111)-(2 × 1) in View of Recent Wavevector-Resolved Electron Energy Loss Spectra

The Mott Insulator Model of the Si(111)-(2 × 1) Surface

Electronic Surface States at Steps in Si(111) 2 × l

A Novel Method for the Study of Optical Properties of Surfaces

Low Temperature Leed and Electric Conductivity Measurements for Cleaved Si(111) Surfaces

Surface Defects

Spot Profile Analysis (LEED) of Defects at Silicon Surfaces

Chemisorption-Induced Defects at Interfaces on Compound Semiconductors

Surface Defects on Semiconductors

Transition from Chemisorption to Stable Interface Structure

The Formation of Interfaces on GaAs and Related Semiconductors: A Reassessment

Physics and Electronics of the Noble-Metal/Elemental-Semiconductor Interface Formation: A Status Report

Local Structure of Adsorbates on Semiconductor Surfaces Using SEXAFS: A Brief Summary

Systematics of Schottky Barriers

Systematics of Chemical Structure and Schottky Barriers at Compound Semiconductor-Metal Interfaces

Schottky Barriers: Model and "Tests"

Schottky Barrier Amorphous-Crystalline Interface Formation

Computer Modeling of High Barrier Schottky Diodes Applied to Study of the Accuracy of Experimental Barrier Determination

Silicide Interface Structure

Microscopic Properties and Behavior of Suicide Interfaces

The Electron States in the Si(111

Details

No. of pages:
662
Language:
English
Copyright:
© 1983
Published:
Imprint:
North Holland
Electronic ISBN:
9780444600165
Print ISBN:
9780444867841

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