Surfaces and Interfaces: Physics and Electronics

Surfaces and Interfaces: Physics and Electronics

1st Edition - January 1, 1983

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  • Editor: R.S. Bauer
  • eBook ISBN: 9780444600165

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Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.

Table of Contents

  • Preface


    Dependence of Electronic Properties on Surface Geometry

    Electronic Properties and Surface Geometry of GaAs and ZnO Surfaces

    Electronic Structure of Si(111) Surfaces

    Photoemission Studies of Surface States on Si(111) 2 × l

    Si(111) 2 × 1 Studies by Angle Resolved Photoemission

    The π-Bonded Chain Model for Si(111)-(2 × 1) in View of Recent Wavevector-Resolved Electron Energy Loss Spectra

    The Mott Insulator Model of the Si(111)-(2 × 1) Surface

    Electronic Surface States at Steps in Si(111) 2 × l

    A Novel Method for the Study of Optical Properties of Surfaces

    Low Temperature Leed and Electric Conductivity Measurements for Cleaved Si(111) Surfaces

    Surface Defects

    Spot Profile Analysis (LEED) of Defects at Silicon Surfaces

    Chemisorption-Induced Defects at Interfaces on Compound Semiconductors

    Surface Defects on Semiconductors

    Transition from Chemisorption to Stable Interface Structure

    The Formation of Interfaces on GaAs and Related Semiconductors: A Reassessment

    Physics and Electronics of the Noble-Metal/Elemental-Semiconductor Interface Formation: A Status Report

    Local Structure of Adsorbates on Semiconductor Surfaces Using SEXAFS: A Brief Summary

    Systematics of Schottky Barriers

    Systematics of Chemical Structure and Schottky Barriers at Compound Semiconductor-Metal Interfaces

    Schottky Barriers: Model and "Tests"

    Schottky Barrier Amorphous-Crystalline Interface Formation

    Computer Modeling of High Barrier Schottky Diodes Applied to Study of the Accuracy of Experimental Barrier Determination

    Silicide Interface Structure

    Microscopic Properties and Behavior of Suicide Interfaces

    The Electron States in the Si(111)-Pd Interface: Towards a Reassessment of the Experimental Information

    Si-Cr and Si-Pd Interface Reaction and Bulk Electronic Structure of Ti, V, Cr, Co, Ni, and Pd Suicides

    Simple Dipole Model for Barrier Heights of Suicide-Silicon and Metal-Silicon Barriers

    Formation of Semiconductor Interfaces

    Far from Equilibrium Vapour Phase Growth of Lattice Matched III-V Compound Semiconductor Interfaces: Some Basic Concepts and Monte-Carlo Computer Simulations

    Growth and Doping of Gallium Arsenide Using Molecular Beam Epitaxy (MBE): Thermodynamic and Kinetic Aspects

    Trap States at Interfaces

    Surface Fermi Level of III-V Compound Semiconductor-Dielectric Interfaces

    Recombination at Semiconductor Surfaces and Interfaces

    Interface States at the SiO2-Si Interface

    Dipoles, Defects and Interfaces

    Traps at Interfaces Between GaAs n-Type LPE Layers and Different Substrates

    Heterostructures and Superlattices

    The Heterojunction Parameters from a Microscopic Point of View

    On the Adjustability of the "Abrupt" Heterojunction Band-Gap Discontinuity

    Effect of Temperature on the Ge/GaAs(110) Interface Formation

    Valence-Band Discontinuities for Abrupt (110), (100), and (111) Oriented Ge-GaAs Heterojunctions

    Electron Mobilities in Modulation-Doped GaAs-(AlGa)As Heterostructures

    New Device Applications of Bandedge Discontinuities in Multilayer Heterojunction Structures

    Semiconductors with Hetero-n-i-p-i Superlattices

    Effects of Interfaces in Submicron Structures

    Heterostructure Devices: A Device Physicist Looks at Interfaces

    Carrier Confinement Effects

    The Role of Boundaries on High Speed Compound Semiconductor Devices

    Injection Dependence of Quasiballistic Transport in GaAs at 77 Κ

    Author Index

    Subject Index

Product details

  • No. of pages: 662
  • Language: English
  • Copyright: © North Holland 1983
  • Published: January 1, 1983
  • Imprint: North Holland
  • eBook ISBN: 9780444600165

About the Editor

R.S. Bauer

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