Surfaces and Interfaces: Physics and Electronics

1st Edition

Editors: R.S. Bauer
Hardcover ISBN: 9780444867841
eBook ISBN: 9780444600165
Imprint: North Holland
Published Date: 1st January 1983
Page Count: 662
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Description

Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics.

The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces.

The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed.

The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.

Table of Contents


Preface


Introduction


Dependence of Electronic Properties on Surface Geometry


Electronic Properties and Surface Geometry of GaAs and ZnO Surfaces


Electronic Structure of Si(111) Surfaces


Photoemission Studies of Surface States on Si(111) 2 × l


Si(111) 2 × 1 Studies by Angle Resolved Photoemission


The π-Bonded Chain Model for Si(111)-(2 × 1) in View of Recent Wavevector-Resolved Electron Energy Loss Spectra


The Mott Insulator Model of the Si(111)-(2 × 1) Surface


Electronic Surface States at Steps in Si(111) 2 × l


A Novel Method for the Study of Optical Properties of Surfaces


Low Temperature Leed and Electric Conductivity Measurements for Cleaved Si(111) Surfaces


Surface Defects


Spot Profile Analysis (LEED) of Defects at Silicon Surfaces


Chemisorption-Induced Defects at Interfaces on Compound Semiconductors


Surface Defects on Semiconductors


Transition from Chemisorption to Stable Interface Structure


The Formation of Interfaces on GaAs and Related Semiconductors: A Reassessment


Physics and Electronics of the Noble-Metal/Elemental-Semiconductor Interface Formation: A Status Report


Local Structure of Adsorbates on Semiconductor Surfaces Using SEXAFS: A Brief Summary


Systematics of Schottky Barriers


Systematics of Chemical Structure and Schottky Barriers at Compound Semiconductor-Metal Interfaces


Schottky Barriers: Model and "Tests"


Schottky Barrier Amorphous-Crystalline Interface Formation


Computer Modeling of High Barrier Schottky Diodes Applied to Study of the Accuracy of Experimental Barrier Determination


Silicide Interface Structure


Microscopic Properties and Behavior of Suicide Interfaces


The Electron States in the Si(111

Details

No. of pages:
662
Language:
English
Copyright:
© North Holland 1983
Published:
Imprint:
North Holland
eBook ISBN:
9780444600165
Hardcover ISBN:
9780444867841

About the Editor

R.S. Bauer

Reviews

Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.