Surfaces and Interfaces: Physics and Electronics - 1st Edition - ISBN: 9780444867841, 9780444600165

Surfaces and Interfaces: Physics and Electronics

1st Edition

Editors: R.S. Bauer
eBook ISBN: 9780444600165
Imprint: North Holland
Published Date: 1st January 1983
Page Count: 662
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Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics.

The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces.

The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed.

The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.

Table of Contents



Dependence of Electronic Properties on Surface Geometry

Electronic Properties and Surface Geometry of GaAs and ZnO Surfaces

Electronic Structure of Si(111) Surfaces

Photoemission Studies of Surface States on Si(111) 2 × l

Si(111) 2 × 1 Studies by Angle Resolved Photoemission

The π-Bonded Chain Model for Si(111)-(2 × 1) in View of Recent Wavevector-Resolved Electron Energy Loss Spectra

The Mott Insulator Model of the Si(111)-(2 × 1) Surface

Electronic Surface States at Steps in Si(111) 2 × l

A Novel Method for the Study of Optical Properties of Surfaces

Low Temperature Leed and Electric Conductivity Measurements for Cleaved Si(111) Surfaces

Surface Defects

Spot Profile Analysis (LEED) of Defects at Silicon Surfaces

Chemisorption-Induced Defects at Interfaces on Compound Semiconductors

Surface Defects on Semiconductors

Transition from Chemisorption to Stable Interface Structure

The Formation of Interfaces on GaAs and Related Semiconductors: A Reassessment

Physics and Electronics of the Noble-Metal/Elemental-Semiconductor Interface Formation: A Status Report

Local Structure of Adsorbates on Semiconductor Surfaces Using SEXAFS: A Brief Summary

Systematics of Schottky Barriers

Systematics of Chemical Structure and Schottky Barriers at Compound Semiconductor-Metal Interfaces

Schottky Barriers: Model and "Tests"

Schottky Barrier Amorphous-Crystalline Interface Formation

Computer Modeling of High Barrier Schottky Diodes Applied to Study of the Accuracy of Experimental Barrier Determination

Silicide Interface Structure

Microscopic Properties and Behavior of Suicide Interfaces

The Electron States in the Si(111)-Pd Interface: Towards a Reassessment of the Experimental Information

Si-Cr and Si-Pd Interface Reaction and Bulk Electronic Structure of Ti, V, Cr, Co, Ni, and Pd Suicides

Simple Dipole Model for Barrier Heights of Suicide-Silicon and Metal-Silicon Barriers

Formation of Semiconductor Interfaces

Far from Equilibrium Vapour Phase Growth of Lattice Matched III-V Compound Semiconductor Interfaces: Some Basic Concepts and Monte-Carlo Computer Simulations

Growth and Doping of Gallium Arsenide Using Molecular Beam Epitaxy (MBE): Thermodynamic and Kinetic Aspects

Trap States at Interfaces

Surface Fermi Level of III-V Compound Semiconductor-Dielectric Interfaces

Recombination at Semiconductor Surfaces and Interfaces

Interface States at the SiO2-Si Interface

Dipoles, Defects and Interfaces

Traps at Interfaces Between GaAs n-Type LPE Layers and Different Substrates

Heterostructures and Superlattices

The Heterojunction Parameters from a Microscopic Point of View

On the Adjustability of the "Abrupt" Heterojunction Band-Gap Discontinuity

Effect of Temperature on the Ge/GaAs(110) Interface Formation

Valence-Band Discontinuities for Abrupt (110), (100), and (111) Oriented Ge-GaAs Heterojunctions

Electron Mobilities in Modulation-Doped GaAs-(AlGa)As Heterostructures

New Device Applications of Bandedge Discontinuities in Multilayer Heterojunction Structures

Semiconductors with Hetero-n-i-p-i Superlattices

Effects of Interfaces in Submicron Structures

Heterostructure Devices: A Device Physicist Looks at Interfaces

Carrier Confinement Effects

The Role of Boundaries on High Speed Compound Semiconductor Devices

Injection Dependence of Quasiballistic Transport in GaAs at 77 Κ

Author Index

Subject Index


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© North Holland 1983
North Holland
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About the Editor

R.S. Bauer