Selected Topics in Group IV and II-VI Semiconductors, Volume 54

1st Edition

Editors: E.H.C. Parker Peter Rudolph G. Müller-Vogt Robert Triboulet E. Kasper
Hardcover ISBN: 9780444824110
eBook ISBN: 9780444596437
Imprint: North Holland
Published Date: 13th June 1996
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Table of Contents

(Please contact the publisher for a complete list of contents). Symposium L: 6th International Symposium on Silicon Molecular Beam Epitaxy. I. Optical properties. II. Superlattices. III. Material analysis. IV. Strain adjustment. V. Competing technologies. VI. Devices. VII. Nanometer structures. VIII. Growth and equipment. IX. Two-dimensional carriers. X. Novel materials. Symposium D: Purification, Doping and Defects in II-VI Materials. I. Thermodynamics - bulk growth. II. Doping and purification. III. Defects. IV. Compensation. V. Diffusion. VI. Transition elements and photorefractivity.


This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field.

Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.


© North Holland 1996
North Holland
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About the Editors

E.H.C. Parker Editor

Affiliations and Expertise

Coventry, U.K.

Peter Rudolph Editor

Affiliations and Expertise

Crystal Technology Consulting (CTC), Schönefeld, Germany

G. Müller-Vogt Editor

Affiliations and Expertise

Karlsruhe, Germany

Robert Triboulet Editor

Affiliations and Expertise

R.Triboulet, CNRS, GEMaC, Meudon Cedex, France

E. Kasper Editor

Affiliations and Expertise

Institut für Halbleitertechnik, University of Stuttgart, Gemany