- Diamond crystal growth from the vapour phase for epitaxial diamond and wafer preparation
2. Doping and semiconductor characterizations
3. Fundamental material’s nature of diamond
4. Device formation and the characterizations
5. Circuits and applications
Power Electronics Device Applications of Diamond Semiconductors presents the state-of-the-art research for diamond growth, doping, device processing, theoretical modelling and device performance. Leading researchers in this area not only present their latest results, but discuss why in the near future it could lead to power electronic devices superior to what is currently available.
The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapour deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth.
Then, it presents the latest doping and semiconductor characterization methods including p-type and n-type growth and characterization, ion implantation, and boron-doped diamond for p+ substrates. After it looks at the fundamental material properties and device physics including the defects in HPHT and CVD diamonds, MOS interface for inversion channel and TEM characterization, Ohmic contacts, and fabrication of flat diamond surfaces.
The results for device formation and characterizations of unipolar and bipolar devices are presented.
The book concludes with a discussion of circuits and applications featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices.
- Leading researchers present the latest results for diamond growth, doping, device fabrication, theoretical modelling and power electronic device performance
- Examines why diamond semiconductors could lead to superior power electronics and compares them to other wide bandgap semiconductors
- Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics
Materials scientists, electric engineers, and physicists studying wide bandgap semiconductors for power electronic applications
- No. of pages:
- © Woodhead Publishing 2018
- 1st June 2018
- Woodhead Publishing
- Paperback ISBN:
Satoshi Koizumi received doctor of engineering (electrical engineering and electronics) at Aoyama Gakuin University (Tokyo, Japan) and joined the diamond research group at National Institute for Materials Science (NIMS), Tsukuba in 1994. Presently, he works as a principal researcher at NIMS on the topics of semiconducting diamond growth and device applications. He established the n-type diamond (which does not exist in nature) growth technique and has succeeded in deep ultraviolet LED formation by diamond pn junctions for the first time. He has worked on CVD diamond research for more than 25 years and published more than 150 refereed journal papers with about 3000 citations. In 2014, he started a research project of diamond power electronics in the Strategic Innovation Program (SIP) Japan cabinet office.
Principle Researcher, National Institute for Materials Science (NIMS)
Hitoshi Umezawa studied electrical engineering and materials science at Waseda University, Japan, where he graduated in 2002 with a doctoral degree in engineering. After that, he became a Post-Doc at Waseda University financed by Japan Society of the Promotion of Science (JSPS). In 2005 he became a researcher at Diamond Research Center in National Institute of Advanced Industrial Science and Technology (AIST), Japan. He teaches semiconductor devices and power electronics as a visiting professor at Chiba University, Japan. He is lanef Chair, whom the research activities are funded by University Grenoble Alpes, France. His research interests include diamond growth and characterization, high power and high frequency devices and related device fabrication processes. He has more than 120 publications in refereed journals.
Senior Researcher, National Institute of Advanced Industrial Science and Technology (AIST)
Julien Pernot received his doctor degree at the University of Montpellier (France) in 2001 where he worked on the electrical transport properties of silicon carbide up to the end of 2002. In 2003, he joined as postdoc the University of Nijmegen (Netherlands) to study defects in wide band gap semiconductors. At the end of 2003, he became associate professor at the University Grenoble Alpes and at Institut NEEL. At the university, he teaches semiconductor physics and electronics. His current research interests concern the electrical transport properties of diamond, SiC, GaN and ZnO. He integrated the highly selective “Institut Universitaire de France” in 2012 and was promoted Professor in 2016. He is the coauthor of more than 50 papers published in high impact factors journals (Nanoletters, Applied Physics Letters, etc) and has been involved in more than 10 national and international projects mainly focused on diamond power devices research. In 2013, he created the annual “French-Japanese workshop on diamond power devices” with Satoshi Koizumi (NIMS, Japan).
Professor, Institute NEEL, Universite Grenoble Alpes
Mariko Suzuki received PhD degree at Waseda University (Japan) on semiconductor physics especially for wide bandgap materials including diamond. She currently works at Toshiba R&D centre as a senior researcher. Her present research target is on novel electronics devices and power electronics application of diamond. She has many publications on diamond and experimentally confirmed high breakdown features of diamond in recent research.
Senior Researcher, Toshiba Corporation