Nuclear Methods in Semiconductor Physics - 1st Edition - ISBN: 9780444894205, 9780444596819

Nuclear Methods in Semiconductor Physics, Volume 25

1st Edition

Editors: G. Langouche J.C. Soares J.P. Stoquert
eBook ISBN: 9780444596819
Imprint: North Holland
Published Date: 1st April 1992
Tax/VAT will be calculated at check-out Price includes VAT (GST)
72.95
54.95
43.99
Unavailable
Price includes VAT (GST)
× DRM-Free

Easy - Download and start reading immediately. There’s no activation process to access eBooks; all eBooks are fully searchable, and enabled for copying, pasting, and printing.

Flexible - Read on multiple operating systems and devices. Easily read eBooks on smart phones, computers, or any eBook readers, including Kindle.

Open - Buy once, receive and download all available eBook formats, including PDF, EPUB, and Mobi (for Kindle).

Institutional Access

Secure Checkout

Personal information is secured with SSL technology.

Free Shipping

Free global shipping
No minimum order.

Table of Contents

Abbreviated. Ion beams in semiconductor physics and technology (S. Kalbitzer). An investigation by resistance and photoluminescence measurements of high-energy heavy-ion irradiated GaAs (R. Carin et al.). Ion beam analysis of mismatched epitaxial heterostructures (A.V. Drigo et al.). Ion channeling study of P implantation damage in CdTe (G. Leo et al.). Nucleation of point defects in low-fluence ion-implanted GaAs and GaP (W. Wesch et al.). Investigation of defects by RBS-channeling methods (G. Götz et al.). Ar ion induced X-ray emission for the analysis of light elements in CdTe (A. Al Neami et al.). Emission channeling studies in semiconductors (H. Hofsäss et al.). Neutron transmutation doped silicon - technological and economic aspects (W. Von Ammon). A focused gas-ion beam system for submicron application (C. Wilbertz et al.). Single and double buried epitaxial metallic layers in Si prepared by ion implantation (A. Vantomme et al.). Donor-hydrogen complexes in silicon studied by Mössbauer spectroscopy (Z.N. Liang, L. Nielsen). Nuclear interactions of defects in semiconductors - magnetic resonance measurements (C.A.J. Ammerlaan et al.). High resolution conversion electron spectroscopy of impurities in semiconductors (J.W. Petersen et al.). PAC studies on the formation and stability of acceptor-defect complexes in semiconductors (M. Deicher). Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study (H. Skudlik et al.). Magnetic behaviour of isolated Fe and Ni ions in semiconducting compounds (H. Waldmann et al.). Generation of intrinsic defects in CdSi:In by doing with Li atoms (H. Wolf et al.). Hyperfine interactions and Rutherford backscattering studies of Cd and Hg in CdTe single crystals and thin films (J.G. Correia et al.). Author index.


Description

The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.


Details

Language:
English
Copyright:
© North Holland 1992
Published:
Imprint:
North Holland
eBook ISBN:
9780444596819

About the Editors

G. Langouche Editor

Affiliations and Expertise

K.U. Leuven, Belgium

J.C. Soares Editor

Affiliations and Expertise

University of Lisbon, Portugal

J.P. Stoquert Editor

Affiliations and Expertise

CRN, Strasbourg, France