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Significant advances have occurred in the theory of non-stoichiometry problems and fundamentally new and wide-ranging applications have been developed, helping to better identify relevant issues. The contributions in this volume bring together the experience of specialists from different disciplines (materials scientists, physicists, chemists and device people) confronted with non-stoichiometry problems. The 40 papers, including 9 invited papers, give an advanced scenario of this wide interdisciplinary area, which is highly important in its diverse aspects of theory, implementation and applications. This work will be of interest not only to universities and laboratories engaged in studies and research in this field, but also to organizations and industrial centres concerned with implementations and applications. The diversity of the topics, as well as the extraordinary tempo in which Non-stoichiometry in Semiconductors has progressed in recent years attest to the permanent vitality of this field of research and development.
(Abbreviated) Parts: I. Experimental Methods for the Determination of Non-Stoichiometry. Chemical composition and properties of semiconductors (J. Vedel). Precise compositional and trace elemental analysis by chemical methods in compound semiconductors (M.H. Yang et al.). Non-stoichiometry and aspects of heavy doping in GaAs revealed by X-ray quasi-forbidden reflection (XFR) method (I. Fujimoto). New possibilities of crystal quality control with combined use of X-ray diffraction and ultrasound (E. Zolotoyabko). II. Phase Relations and Point Defect Equilibria. A model for the phase extent of gallium arsenide derived from experimental dopant solubility data (D.T.J. Hurle). Characterization of CuInS2 by perturbed angular correlations of gamma rays (M. Brüssler et al.). Heat treatments of AgGaS2 single crystals in sulfur atmosphere (Y. Noda et al.). III. Stoichiometry Control in Melt and Solution Growth. Stoichiometry control in compound semiconductors (J.I. Nishizawa). Modified LEC technique for growing high quality III-V semiconductors (M. Tatsumi et al.). IV. Stoichiometry Control in Vapor Phase Epitaxy. Stoichiometry issues in gallium nitride and other wide gap semiconductors (J.I. Pankove). Optical characterization of strained InGaAs/InP quantum well structures (R. Schwedler et al.). The growth mechanism and stoichiometric properties of GaSb compounds grown by MOCVD (H.Y. Ueng et al.). V. Characterization of Specific Point Defects and Complexes. ODMR of stoichiometry defects in III-V semiconductors (J.M. Spaeth). Effect of non-stoichiometry on near-bandedge absorption and non-recombination in bulk GaAs (S. Tüzemen, M.R. Brozel). Photoluminescence study of CdTe:Sm crystals (P. Han et al.). VI. Non-stoichiometry and Deep Levels in I-III-VI2 Compounds. Stoichiometric effects on the properties of Cu-based chalcopyrite I,III,VI2 semiconductor thin films (J.J. Loferski). Chemical and structural characterization of thin films of CuInSe2 (B.H. Tseng, C.A. Wert). Deep levels in monocrystalline CuInSe2 (L. Li, I. Shih). VII. Non-Stoichiometric Oxide Semiconductors. Oxygen non-stoichiometry in thermally annealed and hydrogen implanted TiO2 thin films observed by raman spectroscopy (A. Turcovic et al.). Author index.
- No. of pages:
- © North Holland 1992
- 2nd March 1992
- North Holland
- eBook ISBN:
Raleigh, NC, USA
Taiwan, P.R. China
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