Molecular Beam Epitaxy - 2nd Edition - ISBN: 9780128121368, 9780128121375

Molecular Beam Epitaxy

2nd Edition

From Research to Mass Production

Editors: Mohamed Henini
eBook ISBN: 9780128121375
Paperback ISBN: 9780128121368
Imprint: Elsevier
Published Date: 20th June 2018
Page Count: 692
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Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage.

This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures.

Key Features

  • Condenses the fundamental science of MBE into a modern reference, speeding up literature review
  • Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
  • Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community


Materials Science and Physics researchers

Table of Contents

1. Molecular beam epitaxy of transition metal monopnictides
Gavin Richard Bell
2. Migration Enhanced Epitaxy of Low Dimensional Structures
Yoshiji Horikoshi
3. MBE growth of Si-Ge materials and heterostructures
Maksym Myronov
4. SiGeSn MBE
Inga Anita Fischer
5. MBE of Dilute Nitride Optoelectronic Devices
Mircea Guina
6. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications
Donat J. As
7. AlGaN nanowires for deep ultraviolet optoelectronics
Zetian Mi
8. plasma–assisted MBE of (Al,Ga)N layers and heterostructures
Valentin Jmerik
9. InAsBi and InAsSbBi materials
Shane Johnson, Arvind Joshua Shalindar,
10. Molecular beam epitaxy of GaAsBi and related quaternary alloys
Masahiro Yoshimoto, Kunishige Oe Oe,
11. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices
Gunther Springholz
12. NIL-based site-control epitaxy
Mircea Guina, Teemu Hakkarainen
13. Droplet epitaxy of nanostructures
Stefano Sanguinetti
14. Epitaxial Growth of Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors
Isaac Hernandez-Calderon
15. MBE-grown wide band gap II-VI semiconductors for intersubband device applications
Aidong Shen
16. ZnO Materials and Devices grown by MBE
Umit Ozgur
17. MBE of Complex Oxides
Roman Engel-Herbert
18. Epitaxial Systems Combining Oxides and Semiconductors  
Gang niu, Bertrand Vilquin,
19. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductors
Fumihiro Matsukura
20. Nanostructures of SiGe and ferromagnetic properties
Kang L. Wang 
21. MBE of Hybrid topological/ insulator/ferromagnetic heterostructures and devices
Samarth .N, Anthony Richardella,
22. Challenges and opportunities in MBE growth of 2D crystals: an overview  
Huili Grace Xing
23. Epitaxy of Graphene and h-BN
vignaud .D
24. Molecular beam epitaxy of graphene and hexagonal boron nitride
J. Marcelo J. Lopes, Dominique Vignaud, 
25. MBE of Transition Metal Dichalcogenides and heterostructures
Christopher Hinkle and Christopher Hinkle
26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers
Jiro Nishinaga
27. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth
Achim Schöll
28. MBE of II-VI Lasers
Sergey V. Ivanov, Sedova IV, Sorokin .SV, 
29. THz Quantum Cascade Lasers
Aaron Maxwell Andrews
30. GaSb lasers grown on Silicon substrate for telecom application
Eric Tournie
31. GaP/Si based photovoltaic devices grown by MBE
Charles Cornet
32. MBE as a Mass Production Technique
Matt Marek
33. Mass production of optoelectronic devices: LEDs, lasers, VCSELs
Roland Jager
34. Mass Production of Sensors Grown by MBE
Naohiro Kuze
35. MBE as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices
Yung-Chung Kao
36. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future
Oleg Pchelyakov


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© Elsevier 2018
eBook ISBN:
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About the Editor

Mohamed Henini

Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

Affiliations and Expertise

The University of Nottingham, School of Physics and Astronomy, UK

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