Molecular Beam Epitaxy
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Molecular Beam Epitaxy

From Research to Mass Production

2nd Edition - June 26, 2018

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  • Editor: Mohamed Henini
  • Paperback ISBN: 9780128121368
  • eBook ISBN: 9780128121375

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Description

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures.

Key Features

  • Condenses the fundamental science of MBE into a modern reference, speeding up literature review
  • Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
  • Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Readership

Materials Science and Physics researchers

Table of Contents

  • 1. Molecular beam epitaxy of transition metal monopnictides
    Gavin Richard Bell
    2. Migration Enhanced Epitaxy of Low Dimensional Structures
    Yoshiji Horikoshi
    3. MBE growth of Si-Ge materials and heterostructures
    Maksym Myronov
    4. SiGeSn MBE
    Inga Anita Fischer
    5. MBE of Dilute Nitride Optoelectronic Devices
    Mircea Guina
    6. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications
    Donat J. As
    7. AlGaN nanowires for deep ultraviolet optoelectronics
    Zetian Mi
    8. plasma–assisted MBE of (Al,Ga)N layers and heterostructures
    Valentin Jmerik
    9. InAsBi and InAsSbBi materials
    Shane Johnson and Arvind Joshua Shalindar
    10. Molecular beam epitaxy of GaAsBi and related quaternary alloys
    Masahiro Yoshimoto and Kunishige Oe Oe
    11. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices
    Gunther Springholz
    12. NIL-based site-control epitaxy
    Mircea Guina and Teemu Hakkarainen
    13. Droplet epitaxy of nanostructures
    Stefano Sanguinetti
    14. Epitaxial Growth of Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors
    Isaac Hernandez-Calderon
    15. MBE-grown wide band gap II-VI semiconductors for intersubband device applications
    Aidong Shen
    16. ZnO Materials and Devices grown by MBE
    Ümit Özgür
    17. Epitaxial Systems Combining Oxides and Semiconductors
    Gang niu and Bertrand Vilquin
    18. Nanostructures of SiGe and ferromagnetic properties
    Kang L. Wang
    19. MBE of Hybrid topological/ insulator/ferromagnetic heterostructures and devices
    Samarth .N and Anthony Richardella
    20. Challenges and opportunities in MBE growth of 2D crystals: an overview
    Huili Grace Xing
    21. Molecular beam epitaxy of graphene and hexagonal boron nitride
    J. Marcelo J. Lopes and Dominique Vignaud
    22. MBE of Transition Metal Dichalcogenides and heterostructures
    Christopher Hinkle
    23. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers
    Jiro Nishinaga
    24. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth
    Achim Schöll
    25. MBE of II-VI Lasers
    Sergey V. Ivanov, Sedova I.V and Sergey Sorokin
    26. THz Quantum Cascade Lasers
    Aaron Maxwell Andrews
    27. GaSb lasers grown on Silicon substrate for telecom application
    Eric Tournié
    28. GaP/Si based photovoltaic devices grown by MBE
    Charles Cornet
    29. MBE as a Mass Production Technique
    Matt Marek
    30. Mass production of optoelectronic devices: LEDs, lasers, VCSELs
    Roland Jäger
    31. Mass Production of Sensors Grown by MBE
    Naohiro Kuze
    32. MBE as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices
    Yung-Chung Kao
    33. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future
    Oleg Pchelyakov and Dmitry Pridachin

Product details

  • No. of pages: 788
  • Language: English
  • Copyright: © Elsevier 2018
  • Published: June 26, 2018
  • Imprint: Elsevier
  • Paperback ISBN: 9780128121368
  • eBook ISBN: 9780128121375

About the Editor

Mohamed Henini

Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

Affiliations and Expertise

The University of Nottingham, School of Physics and Astronomy, UK

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