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Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage.
This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures.
- Condenses the fundamental science of MBE into a modern reference, speeding up literature review
- Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
- Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Materials Science and Physics researchers
1. Molecular beam epitaxy of transition metal monopnictides
Gavin Richard Bell
2. Migration Enhanced Epitaxy of Low Dimensional Structures
3. MBE growth of Si-Ge materials and heterostructures
4. SiGeSn MBE
Inga Anita Fischer
5. MBE of Dilute Nitride Optoelectronic Devices
6. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications
Donat J. As
7. AlGaN nanowires for deep ultraviolet optoelectronics
8. plasma–assisted MBE of (Al,Ga)N layers and heterostructures
9. InAsBi and InAsSbBi materials
Shane Johnson and Arvind Joshua Shalindar
10. Molecular beam epitaxy of GaAsBi and related quaternary alloys
Masahiro Yoshimoto and Kunishige Oe Oe
11. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices
12. NIL-based site-control epitaxy
Mircea Guina and Teemu Hakkarainen
13. Droplet epitaxy of nanostructures
14. Epitaxial Growth of Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors
15. MBE-grown wide band gap II-VI semiconductors for intersubband device applications
16. ZnO Materials and Devices grown by MBE
17. Epitaxial Systems Combining Oxides and Semiconductors
Gang niu and Bertrand Vilquin
18. Nanostructures of SiGe and ferromagnetic properties
Kang L. Wang
19. MBE of Hybrid topological/ insulator/ferromagnetic heterostructures and devices
Samarth .N and Anthony Richardella
20. Challenges and opportunities in MBE growth of 2D crystals: an overview
Huili Grace Xing
21. Molecular beam epitaxy of graphene and hexagonal boron nitride
J. Marcelo J. Lopes and Dominique Vignaud
22. MBE of Transition Metal Dichalcogenides and heterostructures
23. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers
24. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth
25. MBE of II-VI Lasers
Sergey V. Ivanov, Sedova I.V and Sergey Sorokin
26. THz Quantum Cascade Lasers
Aaron Maxwell Andrews
27. GaSb lasers grown on Silicon substrate for telecom application
28. GaP/Si based photovoltaic devices grown by MBE
29. MBE as a Mass Production Technique
30. Mass production of optoelectronic devices: LEDs, lasers, VCSELs
31. Mass Production of Sensors Grown by MBE
32. MBE as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices
33. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future
Oleg Pchelyakov and Dmitry Pridachin
- No. of pages:
- © Elsevier 2018
- 26th June 2018
- Paperback ISBN:
- eBook ISBN:
Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.
The University of Nottingham, School of Physics and Astronomy, UK
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