Molecular Beam Epitaxy - 2nd Edition - ISBN: 9780128121368, 9780128121375

Molecular Beam Epitaxy

2nd Edition

From Research to Mass Production

Authors: Mohamed Henini
eBook ISBN: 9780128121375
Paperback ISBN: 9780128121368
Imprint: Elsevier
Published Date: 1st June 2018
Page Count: 800
Tax/VAT will be calculated at check-out Price includes VAT (GST)

Institutional Access

Secure Checkout

Personal information is secured with SSL technology.

Free Shipping

Free global shipping
No minimum order.

Description

Molecular Beam Epitaxy (MBE) provides a comprehensive overview of the latest MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required.

This second edition continues to cover the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage.

Enhancements to the current edition include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures.

Key Features

  • Condenses fundamental science of MBE into a modern reference, speeding up literature review
  • Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
  • Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community

Readership

Materials Science and Physics researchers

Table of Contents

1. Molecular beam epitaxy of transition metal monopnictides

  Gavin Richard Bell

2. Migration Enhanced Epitaxy of Low Dimensional Structures

  Yoshiji Horikoshi

3. MBE growth of Si-Ge materials and heterostructures

  Maksym Myronov

4. SiGeSn MBE

  Inga Anita Fischer

5. MBE of Dilute Nitride Optoelectronic Devices

  Mircea Guina

6. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications

  Donat J. As

7. AlGaN nanowires for deep ultraviolet optoelectronics

  Zetian Mi

8. plasma–assisted MBE of (Al,Ga)N layers and heterostructures

  Valentin Jmerik

9. InAsBi and InAsSbBi materials

  Shane Johnson, Arvind Joshua Shalindar,

10. Molecular beam epitaxy of GaAsBi and related quaternary alloys

  Masahiro Yoshimoto, Kunishige Oe Oe,

11. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices

  Gunther Springholz

12. NIL-based site-control epitaxy  Mircea Guina, Teemu Hakkarainen,

13. Droplet epitaxy of nanostructures

  Stefano Sanguinetti

14. Epitaxial Growth of Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors

  Isaac Hernandez-Calderon

15. MBE-grown wide band gap II-VI semiconductors for intersubband device applications

  Aidong Shen

16. ZnO Materials and Devices grown by MBE

  Ümit Özgür

17. MBE of Complex Oxides

  Roman Engel-Herbert

18. Epitaxial Systems Combining Oxides and Semiconductors  

       Gang niu, Bertrand Vilquin,

19. MBE Growth of As and Sb based Ferromagnetic III-V Semiconductors

  Fumihiro Matsukura

20. Nanostructures of SiGe and ferromagnetic properties

  Kang L. Wang 

21. MBE of Hybrid topological/ insulator/ferromagnetic heterostructures and devices

  Samarth .N, Anthony Richardella,

22. Challenges and opportunities in MBE growth of 2D crystals: an overview  

       Huili Grace Xing

23. Epitaxy of Graphene and h-BN

      vignaud .D

24. Molecular beam epitaxy of graphene and hexagonal boron nitride

       J. Marcelo J. Lopes, Dominique Vignaud, 

25. MBE of Transition Metal Dichalcogenides and heterostructures

  Christopher Hinkle and Christopher Hinkle

26. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers

  Jiro Nishinaga

27. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth

  Achim Schöll

28. MBE of II-VI Lasers

  Sergey V. Ivanov, Sedova IV, Sorokin .SV, 

29. THz Quantum Cascade Lasers

  Aaron Maxwell Andrews

30. GaSb lasers grown on Silicon substrate for telecom application

  Eric Tournié

31. GaP/Si based photovoltaic devices grown by MBE

  Charles Cornet

32. MBE as a Mass Production Technique

  Matt Marek 

33. Mass production of optoelectronic devices: LEDs, lasers, VCSELs

  Roland Jäger

34. Mass Production of Sensors Grown by MBE

  Naohiro Kuze

35. MBE as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices

  Yung-Chung Kao

36. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future

  Oleg Pchelyakov

Details

No. of pages:
800
Language:
English
Copyright:
© Elsevier 2018
Published:
Imprint:
Elsevier
eBook ISBN:
9780128121375
Paperback ISBN:
9780128121368

About the Author

Mohamed Henini

Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

Affiliations and Expertise

The University of Nottingham, School of Physics and Astronomy, UK