Molecular Beam Epitaxy

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage.

This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures.

• Condenses the fundamental science of MBE into a modern reference, speeding up literature review
• Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
• Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Materials Science and Physics researchers

1. Molecular beam epitaxy of transition metal monopnictides

2. Migration Enhanced Epitaxy of Low Dimensional Structures

3. MBE growth of Si-Ge materials and heterostructures

4. SiGeSn MBE

5. MBE of Dilute Nitride Optoelectronic Devices

6. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications

7. AlGaN nanowires for deep ultraviolet optoelectronics

8. plasma–assisted MBE of (Al,Ga)N layers and heterostructures

9. InAsBi and InAsSbBi materials

10. Molecular beam epitaxy of GaAsBi and related quaternary alloys

11. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices

12. NIL-based site-control epitaxy

13. Droplet epitaxy of nanostructures

14. Epitaxial Growth of Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors

15. MBE-grown wide band gap II-VI semiconductors for intersubband device applications

16. ZnO Materials and Devices grown by MBE

17. Epitaxial Systems Combining Oxides and Semiconductors

18. Nanostructures of SiGe and ferromagnetic properties

19. MBE of Hybrid topological/ insulator/ferromagnetic heterostructures and devices

20. Challenges and opportunities in MBE growth of 2D crystals: an overview

21. Molecular beam epitaxy of graphene and hexagonal boron nitride

22. MBE of Transition Metal Dichalcogenides and heterostructures

23. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers

24. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth

25. MBE of II-VI Lasers

26. THz Quantum Cascade Lasers

27. GaSb lasers grown on Silicon substrate for telecom application

28. GaP/Si based photovoltaic devices grown by MBE

29. MBE as a Mass Production Technique

30. Mass production of optoelectronic devices: LEDs, lasers, VCSELs

31. Mass Production of Sensors Grown by MBE

32. MBE as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices

33. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future