Metal Oxides for Non-volatile Memory

Metal Oxides for Non-volatile Memory

Materials, Technology and Applications

1st Edition - March 1, 2022

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  • Editors: Panagiotis Dimitrakis, Ilia Valov, Stefan Tappertzhofen
  • Paperback ISBN: 9780128146293
  • eBook ISBN: 9780128146309

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Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems.

Key Features

  • Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more
  • Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE
  • Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology


Materials Scientists (Researchers and Engineers), Physicists, and Chemists in academia and industry R&D

Table of Contents

  • Cover
  • Title page
  • Table of Contents
  • Copyright
  • Contributors
  • Series editor biography
  • Preface to the series
  • Chapter 1: Introduction to non-volatile memory
  • Abstract
  • Acknowledgements
  • 1.1: Introduction and history
  • 1.2: Flash non-volatile memory
  • 1.3: Novel concepts for non-volatile memories
  • Chapter 2: Resistive switching in metal-oxide memristive materials and devices
  • Abstract
  • Acknowledgments
  • 2.1: Mechanisms of resistive switching in metal-oxide memristive materials and devices
  • 2.2: Local analysis of resistive switching of anionic type
  • 2.3: Multiscale simulation of resistive switching in metal-oxide memristive devices
  • 2.4: Conclusions
  • Chapter 3: Charge trapping NVMs with metal oxides in the memory stack
  • Abstract
  • 3.1: Introduction
  • 3.2: History of charge trap memory devices
  • 3.3: SONOS memory devices
  • 3.4: CT memory cell reliability
  • 3.5: New materials for charge trap memory stack—Metal oxides
  • Chapter 4: Technology and neuromorphic functionality of magnetron-sputtered memristive devices
  • Abstract
  • Acknowledgments
  • 4.1: Features of magnetron sputtering
  • 4.2: Performances and reproducibility of memristive devices
  • 4.3: Functionality of memristors as elements for neuromorphic systems
  • 4.4: Conclusions
  • Chapter 5: Metalorganic chemical vapor deposition of aluminum oxides: A paradigm on the process-structure-properties relationship
  • Abstract
  • Acknowledgements
  • 5.1: Introduction
  • 5.2: Process kinetic modeling and simulation of the MOCVD of metal oxides: The case of Al2O3 films
  • 5.3: Local coordination affects properties: The case of amorphous Al2O3 barrier coatings
  • 5.4: Concluding remarks
  • Chapter 6: MOx materials by ALD method
  • Abstract
  • 6.1: Introduction
  • 6.2: ALD fundamentals
  • 6.3: ALD of oxides for memory devices
  • 6.4: Conclusions
  • Chapter 7: Nano-composite MOx materials for NVMs
  • Abstract
  • Acknowledgments
  • 7.1: Introduction
  • 7.2: Experimental
  • 7.3: Conclusion
  • Chapter 8: MOx in ferroelectric memories
  • Abstract
  • 8.1: Introduction
  • 8.2: Ferroelectricity—A material property
  • 8.3: Negative capacitance in ferroelectrics
  • 8.4: Ferroelectricity in hafnium oxide
  • 8.5: Ferroelectric memories
  • 8.6: Summary and future prospects
  • Chapter 9: “Metal oxides in magnetic memories”: Current status and future perspectives
  • Abstract
  • 9.1: Introduction
  • 9.2: Magnetic random access memory (MRAM)
  • 9.3: Metal oxides in MRAMs
  • 9.4: Perspectives
  • Chapter 10: Correlated transition metal oxides and chalcogenides for Mott memories and neuromorphic applications
  • Abstract
  • 10.1: Introduction
  • 10.2: Mott insulators and Mott transitions
  • 10.3: Electric Mott transitions
  • 10.4: Electric Mott transition by dielectric breakdown: Detailed mechanism
  • 10.5: Microelectronic applications of Mott insulators: Toward Mottronics
  • 10.6: Conclusion
  • Chapter 11: The effect of external stimuli on the performance of memristive oxides
  • Abstract
  • 11.1: Introduction
  • 11.2: Electrical field
  • 11.3: Magnetic field
  • 11.4: Thermochemical treatments
  • 11.5: Strain
  • 11.6: Radiation
  • 11.7: Outlook
  • Chapter 12: Nonvolatile MOX RRAM assisted by graphene and 2D materials
  • Abstract
  • 12.1: MOX RRAM with graphene-based electrodes
  • 12.2: Modulating ion migration in MOX RRAM by 2D materials
  • 12.3: MOX RRAM assisted by additional 2D intercalation layer
  • 12.4: Conclusion
  • Chapter 13: Ubiquitous memristors on-chip in multi-level memory, in-memory computing, data converters, clock generation and signal transmission
  • Abstract
  • Acknowledgment
  • 13.1: Introduction
  • 13.2: Multi-level memory and in-memory arithmetic structures
  • 13.3: ADC and DAC in-memory data converters
  • 13.4: Memristor-based clock signal generators
  • 13.5: Metastable memristive transmission lines
  • 13.6: Conclusions
  • Chapter 14: Neuromorphic applications using MOx-based memristors
  • Abstract
  • 14.1: Introduction on neuromorphic computing
  • 14.2: Recap of MOx-based memristor technology
  • 14.3: Advanced memristor functionalities useful for neuromorphic applications
  • 14.4: Overview of neuromorphic concepts and system prototypes
  • 14.5: Conclusions and outlook
  • Index

Product details

  • No. of pages: 536
  • Language: English
  • Copyright: © Elsevier 2022
  • Published: March 1, 2022
  • Imprint: Elsevier
  • Paperback ISBN: 9780128146293
  • eBook ISBN: 9780128146309

About the Editors

Panagiotis Dimitrakis

Panagiotis Dimitrakis is a Senior Researcher, Cleanroom Facility Manager in the Institute of Nanoscience and Nanotechnology, Greece.

Affiliations and Expertise

Senior Researcher, Cleanroom Facility Manager, Institute of Nanoscience and Nanotechnology, Greece

Ilia Valov

Ilia Valov is a Senior Scientist at the Peter Gruenberg Institute, Electronic Materials (IEM), Julich, Germany.

Affiliations and Expertise

Senior Scientist, Peter Gruenberg Institute, Electronic Materials (IEM), Julich, Germany

Stefan Tappertzhofen

Prof. Dr. Stefan Tappertzhofen studied electrical engineering and information technology at RWTH Aachen University and received his PhD in 2014. From 2014 – 2016 he worked as research associate at the Department of Engineering, University of Cambridge. Afterwards, he worked as a research and development manager for semiconductor measurement technology at aixACCT Systems. Since 2020 he is Professor in Micro- and Nanoelectronics at TU Dortmund University. His research is focused on novel multi-functional materials, memristive systems and circuits, and quantum- and nanotechnology.

Affiliations and Expertise

Chair for Micro- and Nanoelectronics, Technical University of Dortmund, Dortmund, Germany

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