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Ion Beam Analysis - 1st Edition - ISBN: 9781483228891, 9781483274959

Ion Beam Analysis

1st Edition

Proceedings of the Fourth International Conference on Ion Beam Analysis, Aarhus, June 25-29, 1979

Editors: H. H. Andersen J. Bøttiger H. Knudsen
eBook ISBN: 9781483274959
Imprint: North Holland
Published Date: 1st January 1980
Page Count: 640
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Nuclear Instruments and Methods, Volume 168: Ion Beam Analysis presents the proceedings of the Fourth International Conference on Ion Beam Analysis, held in Aarhus, Denmark, on June 25–29, 1979. This book provides information pertinent to the methods and applications ion beam analysis. Organized into eight parts encompassing 95 chapters, this volume begins with an overview of the straggling of energy loss for protons and alpha particles. This text then examines the method for the calculation of the stopping of energetic ions in matter. Other chapters consider the method for measuring relative stopping powers for light energetic ions in highly reactive materials. This book discusses as well the stopping power and straggling of lithium ions with velocities around the Bohr velocity. The final chapter deals with the adsorption behavior of different gases on monocrystalline platinum surfaces. This book is a valuable resource for scientists, technologists, students, and research workers.

Table of Contents


Conference Photo

Part I. Stopping Power and Straggling

Straggling in Energy Loss of Energetic Hydrogen and Helium Ions (Invited)

The Stopping of Energetic Ions in Solids (Invited)

Energy-Loss Straggling of Alpha Particles in Al, Ni, and Au

Accurate Determination of Energy Loss and Energy Straggling of Alpha Particles in Thin Foils

Energy Loss and Energy Straggling of Heavy Particles

Search for the Influence of Chemical Effect on the Stopping Power: The Case of Oxides

Accuracy of Stopping-Power Measurements by Changing the Detector Angle

Stopping Ratios of 50-300 KeV Light Ions in Metals

Hydrogen and Helium Stopping Powers of Rare-Earth Metals

Energy Loss of Light Ions in Diamond

Electronic Energy Loss of H, D and He in Au below 20kev

Stopping Powers and Backscattered Charge Fractions for 20-150 KeV H+ and He+ on Gold

Energy Loss and Effective Charge of 50 to 200 KeV Helium Ions in Solids

Range Parameters of Protons in Silicon Implanted At Energies from 0.5 to 300 KeV

Stopping Power and Straggling of 80-500 KeV Lithium Ions in C, Al, Ni, Cu, Se, Ag, and Te

Energy Loss of Protons in Si, Ge, and Mo

Part II. Cross Sections for Ion-Beam Analysis

Nuclear Cross Sections for Ion Beam Analysis (Invited)

Microanalysis of Fluorine by Nuclear Reactions. I. 19F(P,α0)16O and 19F (P,αγ) 16O Reactions

The 14N(D,P5)15N Cross Section, 0.32-1.45 MeV

Measurement and Analysis of the 1.06 MeV 14N(P,γ)15O Nuclear Resonance Parameters

A Note on the 3He+D Nuclear-Reaction Cross Section

Ion-Induced Optical Emission from Impurities near Solid Surfaces

K X-Ray Yields with Low-Energy Heavy Ions

Proton Induced X-Ray Yields

Quantitative Microanalysis by Heavy Ion Beam Induced X-Ray Excitation

Comparison between Experimental Cross-Section Data and Theories for Direct K Shell Ionization by Heavy Particles

Determination of Oxygen in Thin Films with the 16O(3He,Pγ)18F Reaction

Screening Corrections to the RBS Cross Section and Their Consequences for Ion Beam Analysis

A Comparison of Thin and Thick Target Methods of Measuring Proton-Induced K-Shell Ionization Cross Sections

Part III. Methods and Apparatus

High Resolution Scanning Ion Probes: Applications to Physics and Biology (Invited)

Use of Non-Coulomb H Ion Backscattering to Characterize Thick Anodized Aluminum Films

A Comparison between the Time-Of-Flight and Stripping-Cell Methods Used in Low-Energy Ion Scattering

Surface Topology Using Rutherford Backscattering

Effects of Surface Roughness on Backscattering Spectra

Modification of a Van De Graaff Electron Source for Combined Ion-Beam/Thermoionic Electron-Beam Operation

A Gold and Aluminium Implanted Standard for Ion Beam Experiments

Irradiation Chamber and Sample Changer for Biological Samples

The High Sensitivity Measurement of Carbon Using the Nuclear Microprobe

A New Technique for Backscattering Analysis

Elimination of the Beam Effect on Channelling Dips of Bismuth Implanted in Silicon

Dechanneling and the Nature of Defect Structures in Natural Type Ia Diamonds

The Nuclear Microprobe Determination of the Spatial Distribution of Stable Isotope Tracers

Characterization of Amorphous Silicon Films by Rutherford Backscattering Spectrometry

A Method for Determining Depth Profiles of Transition Elements in Steels

Depth Profiling of Deuterium with the D(3He,P)4He Reaction

Coincidence Measurements between Scattered Particles and X-Rays to Obtain High Depth and Mass Resolution

Ion Beam Monitoring Using Thin Selfsupporting Reference Foils

The Electron-Beam Analysis of Doped Zns Crystals

Heavy Ion Microlithography - A New Tool to Generate and Investigate Submicroscopic Structures

A New Electrostatic Ion Microprobe System

Trace Element Detection Sensitivity in PIXE Analysis by Means of an External Proton Beam

Advances in the Use of PIXE and PESA for Air Pollution Sampling

Part IV. Radiation Damage, Defects, and Diffusion

Ion-Beam-Induced Migration and Its Effect on Concentration Profiles (Invited)

Laser Induced Surface Alloy Formation and Diffusion of Antimony in Aluminium

The Application of Low Angle Rutherford Backscattering and Channeling Techniques to Determine Implantation Induced Disorder Profile Distributions in Semiconductors

The Application of Ion Beam Methods to Diffusion and Permeation Measurements

D and 3He Trapping and Mutual Replacement in Molybdenum

Deuterium Enrichment during Ion Bombardment in VD0.01 Alloys

Channeling and Nuclear-Reaction Profiling of Hydrogen and Deuterium Implanted Gaas

Ion-Beam-Induced Annealing Effects in Gaas

Analyzing Beam Damage in the Si Surface

(110) Si Surface Peak Analysis by 100-350 KeV Protons

Dependence of Defect Structures on Implanted Impurity Species in Al Single Crystals

Analysis of the Dechanneling Mechanism Due to Dislocations

Computer Simulations of Channeling Measurements in Carbon-Implanted NbC Single Crystals

Part V. Sputter Profiling and SIMS

Recoil Mixing in Solids by Energetic Ion Beams (Invited)

Aspects of Quantitative Secondary Ion Mass Spectrometry (Invited)

Sputtering Rates of Minerals and Implications for Abundances of Solar Elements in Lunar Samples

Trace Analysis in Cadmium Telluride by Heavy Ion Induced X-Ray Emission and by SIMS

Towards A Universal Model for Sputtered Ion Emission

Ion Induced Auger Spectroscopy

Depth Distributions of Low Energy Deuterium Implanted Into Silicon as Determined by SIMS

Distortion of Depth Profiles during Sputtering. I. General Description of Collisional Mixing

Depth Resolution of Sputter Profiling Investigated by Combined Auger-X-Ray Analysis of Thin Films

Edge-Effects Correction in Depth Profiles Obtained by Ion-Beam Sputtering

Surface Roughening of Copper by Low Energy Ion Bombardment

Application of PIXE to the Measurement of Sputter Deposits

Determination of Carbon in EFG Silicon Ribbons by Nuclear Techniques and SIMS

Analysis of Ion-Bombarded Cr-Sio Thin Films

On the Importance of Surface Preparation in Reducing Undesirable Surface Topography in Ion-Beam Analysis

Effects of Incident Ion Energy on Sputtering Profiles

Light Emission from Sputtered Oxygen

Part VI. Applications to Arts and Archaeology

Radioisotope Detection with Tandem Electrostatic Accelerators (Invited)

A Possible Application of the SIMS Method to Determine the Provenance of Archaeological Objects

PIXE Research with an External Beam

Ion Backscattering and X-Ray Investigations of Violin Varnish and Wood

PIXEPIGME Studies of Artefacts

Applications of (N, P) and (N,Α) Reactions and a Backscattering Technique to Fusion Reactor Materials, Archaeometry, and Nuclear Spectroscopy

Part VII. New Applications of Ion-Beam Analysis

The Application of Ion-Beam Analysis to Earth Sciences (Invited)

Ion-Beam Analysis of Meteoritic and Lunar Samples (Invited)

RBS and Channeling Analysis of as and Ga in Laser Doped Silicon

Evaporation Loss and Diffusion of Antimony in Silicon under Pulsed Laser Irradiation

Application of Ion-Backscattering and Channeling Techniques to Surface Microanalysis

Measurement of Oxygen Depth Profiles in Thin Layers and Bulk Materials

Correction Factor for Hair Analysis by PIXE

Investigation of the Solid-State Reaction between Nickel Oxide and Alumina by Rutherford Backscattering (RBS)

An Interface-Marker Technique Applied to the Study of Metal Suicide Growth

Nuclear Reaction Analysis of Hydrogen in Amorphous Silicon and Silicon Carbide Films

A Study of Arsenic Profiles in Arsenic-Implanted Silicon after Millisecond Laser-Pulse Annealing by Rutherford Backscattering

Measurements of 10Be Distributions Using a Tandem Van De Graaff Accelerator

IS Dopant Redistribution Evidence for Melting During Pulsedlaser Annealing of Silicon?

The Use of Proton Induced X-Ray Emission in the Design and Evaluation of Catalysts

PIXE and NRA Environmental Studies by Means of Lichen Indicators

The Use of PIXE for the Measurement of Thorium and Uranium at Μg G-1 Levels in Thick Ore Samples

Light Volatiles in Diamond: Physical Interpretation and Genetic Significance

Nuclear Reaction Analysis for Measuring Moisture Profiles in Graphite/Epoxy Composites

Changes in the Surface Composition of Ag-Pd, Au-Pd and Cu-Pd Alloys under Ion Bombardment

Hydrogen Ratios and Profiles in Deposited Amorphous and Polycrystalline Films and in Metals Using Nuclear Techniques

Fast Multielemental Water Analysis below the 0.1 Ppb Level by Particle-Induced X-Ray Emission

Biomedical Application of PIXE at the University of Liège

Particleinduced X-Ray Emission (PIXE) Analysis of Biological Materials: Precision, Accuracy, and Application to Cancer Tissues

Elemental Microanalysis of Biological and Medical Specimens with A Scanning Proton Microprobe

Part VIII. Surface Studies

Investigation of Solid Surfaces by Energetic Ions (Invited)

Ion Beam Induced Desorption of Surface Layers (Invited)

Ion Induced Secondary Electron Emission as a Probe for Adsorbed Oxygen on Tungsten

Analysis of Surface Contaminant Covering by Ion-Electron Spectroscopy Methods

Ion-Beam Crystallography of the Si (100) Surface

Si (001) Surface Studies Using High Energy Ion Scattering

Creation of Surface Damage on a Nickel (110) Surface by Bombardment with 3-30 KeV Noble Gas Ions

Ion Scattering as A Tool for Structure Investigations, Demonstrated in A Study on "Stepped" Cu(410)

The Initial Stages of Oxidation of the Ni (110) Surface

Production of Deuterium Nuclear-Spin Polarization Using Electroncapture Spectroscopy ECS at Polycrystalline Cu Surfaces

Heavy Ion Induced Desorption of Organic Compounds

Ion-Induced Adsorption of Oxygen at A Cu (110) Surface

Structure Transformations of the W(001) Surface by H2 Adsorption - An MeV Ion-Scattering Study

Absolute Coverage Measurement of Adsorbed CO and D2 on Platinum

Author Index


No. of pages:
© North Holland 1980
1st January 1980
North Holland
eBook ISBN:

About the Editors

H. H. Andersen

J. Bøttiger

Affiliations and Expertise

Aarhus University, Aarhus, Denmark

H. Knudsen

Ratings and Reviews