Ion Beam Analysis

Ion Beam Analysis

Proceedings of the Fourth International Conference on Ion Beam Analysis, Aarhus, June 25-29, 1979

1st Edition - January 1, 1980

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  • Editors: H. H. Andersen, J. Bøttiger, H. Knudsen
  • eBook ISBN: 9781483274959

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Description

Nuclear Instruments and Methods, Volume 168: Ion Beam Analysis presents the proceedings of the Fourth International Conference on Ion Beam Analysis, held in Aarhus, Denmark, on June 25–29, 1979. This book provides information pertinent to the methods and applications ion beam analysis. Organized into eight parts encompassing 95 chapters, this volume begins with an overview of the straggling of energy loss for protons and alpha particles. This text then examines the method for the calculation of the stopping of energetic ions in matter. Other chapters consider the method for measuring relative stopping powers for light energetic ions in highly reactive materials. This book discusses as well the stopping power and straggling of lithium ions with velocities around the Bohr velocity. The final chapter deals with the adsorption behavior of different gases on monocrystalline platinum surfaces. This book is a valuable resource for scientists, technologists, students, and research workers.

Table of Contents


  • Preface

    Conference Photo

    Part I. Stopping Power and Straggling

    Straggling in Energy Loss of Energetic Hydrogen and Helium Ions (Invited)

    The Stopping of Energetic Ions in Solids (Invited)

    Energy-Loss Straggling of Alpha Particles in Al, Ni, and Au

    Accurate Determination of Energy Loss and Energy Straggling of Alpha Particles in Thin Foils

    Energy Loss and Energy Straggling of Heavy Particles

    Search for the Influence of Chemical Effect on the Stopping Power: The Case of Oxides

    Accuracy of Stopping-Power Measurements by Changing the Detector Angle

    Stopping Ratios of 50-300 KeV Light Ions in Metals

    Hydrogen and Helium Stopping Powers of Rare-Earth Metals

    Energy Loss of Light Ions in Diamond

    Electronic Energy Loss of H, D and He in Au below 20kev

    Stopping Powers and Backscattered Charge Fractions for 20-150 KeV H+ and He+ on Gold

    Energy Loss and Effective Charge of 50 to 200 KeV Helium Ions in Solids

    Range Parameters of Protons in Silicon Implanted At Energies from 0.5 to 300 KeV

    Stopping Power and Straggling of 80-500 KeV Lithium Ions in C, Al, Ni, Cu, Se, Ag, and Te

    Energy Loss of Protons in Si, Ge, and Mo

    Part II. Cross Sections for Ion-Beam Analysis

    Nuclear Cross Sections for Ion Beam Analysis (Invited)

    Microanalysis of Fluorine by Nuclear Reactions. I. 19F(P,α0)16O and 19F (P,αγ) 16O Reactions

    The 14N(D,P5)15N Cross Section, 0.32-1.45 MeV

    Measurement and Analysis of the 1.06 MeV 14N(P,γ)15O Nuclear Resonance Parameters

    A Note on the 3He+D Nuclear-Reaction Cross Section

    Ion-Induced Optical Emission from Impurities near Solid Surfaces

    K X-Ray Yields with Low-Energy Heavy Ions

    Proton Induced X-Ray Yields

    Quantitative Microanalysis by Heavy Ion Beam Induced X-Ray Excitation

    Comparison between Experimental Cross-Section Data and Theories for Direct K Shell Ionization by Heavy Particles

    Determination of Oxygen in Thin Films with the 16O(3He,Pγ)18F Reaction

    Screening Corrections to the RBS Cross Section and Their Consequences for Ion Beam Analysis

    A Comparison of Thin and Thick Target Methods of Measuring Proton-Induced K-Shell Ionization Cross Sections

    Part III. Methods and Apparatus

    High Resolution Scanning Ion Probes: Applications to Physics and Biology (Invited)

    Use of Non-Coulomb H Ion Backscattering to Characterize Thick Anodized Aluminum Films

    A Comparison between the Time-Of-Flight and Stripping-Cell Methods Used in Low-Energy Ion Scattering

    Surface Topology Using Rutherford Backscattering

    Effects of Surface Roughness on Backscattering Spectra

    Modification of a Van De Graaff Electron Source for Combined Ion-Beam/Thermoionic Electron-Beam Operation

    A Gold and Aluminium Implanted Standard for Ion Beam Experiments

    Irradiation Chamber and Sample Changer for Biological Samples

    The High Sensitivity Measurement of Carbon Using the Nuclear Microprobe

    A New Technique for Backscattering Analysis

    Elimination of the Beam Effect on Channelling Dips of Bismuth Implanted in Silicon

    Dechanneling and the Nature of Defect Structures in Natural Type Ia Diamonds

    The Nuclear Microprobe Determination of the Spatial Distribution of Stable Isotope Tracers

    Characterization of Amorphous Silicon Films by Rutherford Backscattering Spectrometry

    A Method for Determining Depth Profiles of Transition Elements in Steels

    Depth Profiling of Deuterium with the D(3He,P)4He Reaction

    Coincidence Measurements between Scattered Particles and X-Rays to Obtain High Depth and Mass Resolution

    Ion Beam Monitoring Using Thin Selfsupporting Reference Foils

    The Electron-Beam Analysis of Doped Zns Crystals

    Heavy Ion Microlithography - A New Tool to Generate and Investigate Submicroscopic Structures

    A New Electrostatic Ion Microprobe System

    Trace Element Detection Sensitivity in PIXE Analysis by Means of an External Proton Beam

    Advances in the Use of PIXE and PESA for Air Pollution Sampling

    Part IV. Radiation Damage, Defects, and Diffusion

    Ion-Beam-Induced Migration and Its Effect on Concentration Profiles (Invited)

    Laser Induced Surface Alloy Formation and Diffusion of Antimony in Aluminium

    The Application of Low Angle Rutherford Backscattering and Channeling Techniques to Determine Implantation Induced Disorder Profile Distributions in Semiconductors

    The Application of Ion Beam Methods to Diffusion and Permeation Measurements

    D and 3He Trapping and Mutual Replacement in Molybdenum

    Deuterium Enrichment during Ion Bombardment in VD0.01 Alloys

    Channeling and Nuclear-Reaction Profiling of Hydrogen and Deuterium Implanted Gaas

    Ion-Beam-Induced Annealing Effects in Gaas

    Analyzing Beam Damage in the Si Surface

    (110) Si Surface Peak Analysis by 100-350 KeV Protons

    Dependence of Defect Structures on Implanted Impurity Species in Al Single Crystals

    Analysis of the Dechanneling Mechanism Due to Dislocations

    Computer Simulations of Channeling Measurements in Carbon-Implanted NbC Single Crystals

    Part V. Sputter Profiling and SIMS

    Recoil Mixing in Solids by Energetic Ion Beams (Invited)

    Aspects of Quantitative Secondary Ion Mass Spectrometry (Invited)

    Sputtering Rates of Minerals and Implications for Abundances of Solar Elements in Lunar Samples

    Trace Analysis in Cadmium Telluride by Heavy Ion Induced X-Ray Emission and by SIMS

    Towards A Universal Model for Sputtered Ion Emission

    Ion Induced Auger Spectroscopy

    Depth Distributions of Low Energy Deuterium Implanted Into Silicon as Determined by SIMS

    Distortion of Depth Profiles during Sputtering. I. General Description of Collisional Mixing

    Depth Resolution of Sputter Profiling Investigated by Combined Auger-X-Ray Analysis of Thin Films

    Edge-Effects Correction in Depth Profiles Obtained by Ion-Beam Sputtering

    Surface Roughening of Copper by Low Energy Ion Bombardment

    Application of PIXE to the Measurement of Sputter Deposits

    Determination of Carbon in EFG Silicon Ribbons by Nuclear Techniques and SIMS

    Analysis of Ion-Bombarded Cr-Sio Thin Films

    On the Importance of Surface Preparation in Reducing Undesirable Surface Topography in Ion-Beam Analysis

    Effects of Incident Ion Energy on Sputtering Profiles

    Light Emission from Sputtered Oxygen

    Part VI. Applications to Arts and Archaeology

    Radioisotope Detection with Tandem Electrostatic Accelerators (Invited)

    A Possible Application of the SIMS Method to Determine the Provenance of Archaeological Objects

    PIXE Research with an External Beam

    Ion Backscattering and X-Ray Investigations of Violin Varnish and Wood

    PIXEPIGME Studies of Artefacts

    Applications of (N, P) and (N,Α) Reactions and a Backscattering Technique to Fusion Reactor Materials, Archaeometry, and Nuclear Spectroscopy

    Part VII. New Applications of Ion-Beam Analysis

    The Application of Ion-Beam Analysis to Earth Sciences (Invited)

    Ion-Beam Analysis of Meteoritic and Lunar Samples (Invited)

    RBS and Channeling Analysis of as and Ga in Laser Doped Silicon

    Evaporation Loss and Diffusion of Antimony in Silicon under Pulsed Laser Irradiation

    Application of Ion-Backscattering and Channeling Techniques to Surface Microanalysis

    Measurement of Oxygen Depth Profiles in Thin Layers and Bulk Materials

    Correction Factor for Hair Analysis by PIXE

    Investigation of the Solid-State Reaction between Nickel Oxide and Alumina by Rutherford Backscattering (RBS)

    An Interface-Marker Technique Applied to the Study of Metal Suicide Growth

    Nuclear Reaction Analysis of Hydrogen in Amorphous Silicon and Silicon Carbide Films

    A Study of Arsenic Profiles in Arsenic-Implanted Silicon after Millisecond Laser-Pulse Annealing by Rutherford Backscattering

    Measurements of 10Be Distributions Using a Tandem Van De Graaff Accelerator

    IS Dopant Redistribution Evidence for Melting During Pulsedlaser Annealing of Silicon?

    The Use of Proton Induced X-Ray Emission in the Design and Evaluation of Catalysts

    PIXE and NRA Environmental Studies by Means of Lichen Indicators

    The Use of PIXE for the Measurement of Thorium and Uranium at Μg G-1 Levels in Thick Ore Samples

    Light Volatiles in Diamond: Physical Interpretation and Genetic Significance

    Nuclear Reaction Analysis for Measuring Moisture Profiles in Graphite/Epoxy Composites

    Changes in the Surface Composition of Ag-Pd, Au-Pd and Cu-Pd Alloys under Ion Bombardment

    Hydrogen Ratios and Profiles in Deposited Amorphous and Polycrystalline Films and in Metals Using Nuclear Techniques

    Fast Multielemental Water Analysis below the 0.1 Ppb Level by Particle-Induced X-Ray Emission

    Biomedical Application of PIXE at the University of Liège

    Particleinduced X-Ray Emission (PIXE) Analysis of Biological Materials: Precision, Accuracy, and Application to Cancer Tissues

    Elemental Microanalysis of Biological and Medical Specimens with A Scanning Proton Microprobe

    Part VIII. Surface Studies

    Investigation of Solid Surfaces by Energetic Ions (Invited)

    Ion Beam Induced Desorption of Surface Layers (Invited)

    Ion Induced Secondary Electron Emission as a Probe for Adsorbed Oxygen on Tungsten

    Analysis of Surface Contaminant Covering by Ion-Electron Spectroscopy Methods

    Ion-Beam Crystallography of the Si (100) Surface

    Si (001) Surface Studies Using High Energy Ion Scattering

    Creation of Surface Damage on a Nickel (110) Surface by Bombardment with 3-30 KeV Noble Gas Ions

    Ion Scattering as A Tool for Structure Investigations, Demonstrated in A Study on "Stepped" Cu(410)

    The Initial Stages of Oxidation of the Ni (110) Surface

    Production of Deuterium Nuclear-Spin Polarization Using Electroncapture Spectroscopy ECS at Polycrystalline Cu Surfaces

    Heavy Ion Induced Desorption of Organic Compounds

    Ion-Induced Adsorption of Oxygen at A Cu (110) Surface

    Structure Transformations of the W(001) Surface by H2 Adsorption - An MeV Ion-Scattering Study

    Absolute Coverage Measurement of Adsorbed CO and D2 on Platinum

    Author Index




Product details

  • No. of pages: 640
  • Language: English
  • Copyright: © North Holland 1980
  • Published: January 1, 1980
  • Imprint: North Holland
  • eBook ISBN: 9781483274959

About the Editors

H. H. Andersen

J. Bøttiger

Affiliations and Expertise

Aarhus University, Aarhus, Denmark

H. Knudsen

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