Industry Standard FDSOI Compact Model BSIM-IMG for IC Design - 1st Edition - ISBN: 9780081024010, 9780081024027

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design

1st Edition

Authors: Chenming Hu Sourabh Khandelwal Yogesh Chauhan Thomas Mckay Josef Watts Juan Duarte Pragya Kushwaha Harshit Agarwal
eBook ISBN: 9780081024027
Paperback ISBN: 9780081024010
Imprint: Woodhead Publishing
Published Date: 22nd May 2019
Page Count: 216
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Table of Contents

  1. Fully Depleted Silicon on Oxide Transistor and Compact Model
    2. Core Model for Independent Multigate MOSFETs
    3. Channel Current Model With Real Device Effects in BSIM-IMG
    4. Leakage Current and Thermal Effects
    5. Model for Terminal Charges and Capacitances in BSIM-IMG
    6. Parameter Extraction With BSIM-IMG Compact Model
    7. Testing BSIM-IMG Model Quality
    8. High-Frequency and Noise Models in BSIM-IMG


Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology.

The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.

Key Features

  • Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model
  • Explains the complex operation of the FDSOI device and its use of two independent control inputs
  • Addresses the parameter extraction challenges for those using this model


Semiconductor engineers, Materials Scientists, Circuit Designers, Researchers in electronic devices and circuits


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Woodhead Publishing
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About the Authors

Chenming Hu

Chenming Hu Author

Chenming Hu is Distinguished Chair Professor Emeritus at UC Berkeley. He was the Chief Technology Officer of TSMC and founder of Celestry Design Technologies. He is best known for developing the revolutionary 3D transistor FinFET that powers semiconductor chips beyond 20nm. He also led the development of BSIM-- the industry standard transistor model that is used in designing most of the integrated circuits in the world. He is a member of the US Academy of Engineering, the Chinese Academy of Science, and Academia Sinica. His honors include the Asian American Engineer of the Year Award, IEEE Andrew Grove Award and Solid Circuits Award as well as Nishizawa Medal, and UC Berkeley's highest honor for teaching-- the Berkeley Distinguished Teaching Award.

Affiliations and Expertise

Professor Emeritus, University of California, Berkeley, CA, USA

Sourabh Khandelwal Author

Sourabh Khandelwal is currently a Postdoctoral Researcher in the BSIM Group, University of California, Berkeley. Sourabh received his PhD degree from Norwegian University of Science and Technology in 2013 and Masters’ degree from Indian Institute of Technology (IIT) Bombay in 2007. From 2007 – 2010 he worked as a Research Engineer at IBM Semiconductor Research and Development Centre, developing compact models for RF SOI devices. He holds a patent and has authored several research papers in the area of device modeling and characterization. His PhD work on GaN compact model is under consideration for industry standardization by the Compact Model Coalition.

Affiliations and Expertise

Research Faculty, Dept. of Electrical Engineering, University of South Florida, Tampa, USA

Yogesh Chauhan

Yogesh Chauhan Author

Yogesh S. Chauhan is an assistant professor in EE department at Indian Institute of Technology Kanpur, India. He received Ph.D. degree in compact modeling of high voltage MOSFETs in 2007 from EPFL Switzerland. During 2007-2010, he was manager in IBM Bangalore where he led compact modeling team focusing on RF bulk and SOI transistors and ESD modeling team. During 2010-2012, he was postdoctoral fellow at University of California Berkeley, where he worked on development of bulk and multigate transistor models including BSIM6, BSIM-IMG and BSIM-CMG. He received IBM faculty award in 2013 for his contribution in compact modeling. He has co-authored over 50 conference and journal publications in the field of device compact modeling.

Affiliations and Expertise

Associate Professor at the Dept. of Electrical Engineering, Indian Institute of Technology Kanpur

Thomas Mckay Author

Director of RF Innovation at Globalfoundries, USA

Affiliations and Expertise

Director of RF Innovation, Globalfoundaries, USA

Josef Watts Author

Principal Member of Technical Staff at Globalfoundries USA

Affiliations and Expertise

Principal Member of Technical Staff, Globalfoundries, USA

Juan Duarte

Juan Duarte Author

Juan Pablo Duarte Sepúlveda is currently working toward his PhD. degree at the University of California, Berkeley. He received his BS (2010) and MS (2012) degrees in Electrical Engineering from Korea Advanced Institute of Science and Technology (KAIST). He held a position as a lecturer at Universidad Tecnica Federico Santa Maria, Valparaiso, Chile, in 2012. He has authored many papers in nanoscale semiconductor device modeling and characterization. He received the Best Student Paper Award at the 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) for the paper “Unified FinFET Compact Model: Modelling Trapezoidal Triple-Gate FinFETs”.

Affiliations and Expertise

University of California, Berkeley, USA

Pragya Kushwaha

Pragya Kushwaha Author

Pragya Kushwaha is currently a Postdoctoral Researcher with Prof. Chenming Hu in the BSIM Device Modeling Group at University of California, Berkeley. She received her PhD degree from Indian Institute of Technology Kanpur, India in 2017. She has authored several national and international research papers in the area of semiconductor device modeling and characterization. During her PhD, she has developed a complete RF compact model for FDSOI transistors under the frame work of industry standard BSIM-IMG compact model. Her current research interests include modeling, simulation, and characterization of advanced semiconductor devices such as nanowires, NCFETs, PD/FDSOIs, FinFETs, tunnel FETs, high-voltage FETs, and bulk MOSFETs.

Affiliations and Expertise

Postdoctoral Researcher, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, USA

Harshit Agarwal

Harshit Agarwal Author

Harshit Agarwal received the PhD degree from Indian Institute of Technology Kanpur, India in 2017. He is currently working as center manager and post-doc fellow at Berkeley Device Modeling Centre, BSIM group, University of California Berkeley, Berkeley, USA. He has been involved in the development of multi-gate and bulk MOSFET models. He is also involved in the modeling and characterization of advanced steep sub-threshold slope devices like negative capacitance FETs, tunnel FET etc. He has authored several papers in the field of semiconductor device modeling, simulation and characterization.

Affiliations and Expertise

Center Manager and Postdoctoral Researcher, Berkeley Device Modeling Center, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, USA