Description

Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field.

Readership

Libraries, researchers, graduate students and practitioners in materials science (electronic materials field), and electrical engineering (field of electronic devices).

Table of Contents

G.B. Stringfellow, Materials Issues in High Brightness Light Emitting Diodes. M.G. Craford, Overview of Device Issues in High Brightness Light Emitting Modes. F.M. Steranka, AlGaAs Red LEDs. C.H. Chen, S.A.Stockman, M.J. Peanasky, and C.P. Kuo, OMVPE Growth of AlGaInP for High-Efficiency Visible Light Emitting Diodes. F.A. Kish and R.M. Fletcher, AlGaInP Light-Emitting Diodes. M.W. Hodapp, Applications for High Brightness LEDs. I. Akasakiand H. Amano, Organometallic Vapor Phase Epitaxy of GaN for High Brightness Blue Light Emitting Diodes. S. Nakamura, III-V Nitride Based uv/Blue/Green/Yellow LEDs and LDs. Subject Index.

Details

No. of pages:
469
Language:
English
Copyright:
© 1997
Published:
Imprint:
Academic Press
Electronic ISBN:
9780080864457
Print ISBN:
9780127521565

About the serial-volume-editors