Heterostructure Lasers Part B

Heterostructure Lasers Part B

1st Edition - July 28, 1978

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  • Author: H.C. Jr. Casey
  • eBook ISBN: 9780323155083

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Heterostructure Lasers, Part B: Materials and Operating Characteristics focuses on the operating characteristics of heterostructure lasers and the semiconductor materials used to fabricate them. Each major topic is introduced along with the basic laws that govern the observed phenomena. The expressions relevant to heterostructure lasers are derived from the basic laws, and realistic numerical examples based on the GaAs-AlxGa1-xAs heterostructure are given. This book is comprised of four chapters and begins with a discussion on semiconductor materials that have been used most extensively to fabricate heterostructure injection lasers, particularly combinations of III-V compounds. IV-VI binary compounds and their solutions are described, along with compositional grading for heterostructure lasers. The next chapter presents the phase equilibria, impurity incorporation, and the epitaxial growth techniques for heterostructure lasers, namely, liquid-phase epitaxy, molecular-beam epitaxy, and chemical vapor deposition. The fabrication and operating characteristics of both broad-area and stripe-geometry heterostructure lasers are then examined. The final chapter is devoted to the degradation of heterostructure lasers, with emphasis on catastrophic mirror damage at high power densities, ""dark-line defect"" formation, and gradual degradation. This monograph will be of interest to physicists.

Table of Contents

  • Preface


    Contents of Part A

    Chapter 5 ⎥ Heterostructure Materials

    5.1 Introduction

    5.2 III-V Binary Compounds

    5.3 III-V Ternary Solid Solutions

    5.4 III-V Binary and Ternary Lattice-Matching Systems for Heterostructure Lasers

    5.5 III-V Binary and Quaternary Lattice-Matching Systems for Heterostructure Lasers

    5.6 Compositional Grading for Heterostructure Lasers

    5.7 IV-VI Binary Compounds and Their Solutions

    5.8 Concluding Comments


    Chapter 6 ⎥ Phase Equilibria and Heteroepitaxy

    6.1 Introduction

    6.2 Phase Equilibria in III-V Systems

    6.3 Impurity Incorporation in III-V Compounds

    6.4 Phase Equilibria in IV-VI Systems

    6.5 Liquid-Phase Epitaxy

    6.6 Molecular-Beam Epitaxy

    6.7 Chemical-Vapor Deposition

    6.8 Concluding Comments


    Chapter 7 ⎥ Fabrication and Operating Characteristics

    7.1 Introduction

    7.2 Device Fabrication

    7.3 Single-Heterostructure Broad-Area Lasers

    7.4 Double-Heterostructure Broad-Area Lasers

    7.5 Separate-Confinement Broad-Area Lasers

    7.6 Stripe-Geometry Laser Fabrication

    7.7 Threshold Current of Stripe-Geometry Lasers

    7.8 Thermal Properties of Stripe-Geometry Lasers

    7.9 Gain-Coefficient Measurements

    7.10 Gain Guiding in Stripe-Geometry Lasers

    7.11 Emission Properties of Stripe-Geometry Lasers

    7.12 Distributed-Feedback Lasers

    7.13 Concluding Comments


    Chapter 8 ⎥ Degradation

    8.1 Introduction

    8.2 Catastrophic Failure

    8.3 The Dark-Line Defect (DLD)

    8.4 Gradual Degradation of GaAs-AlxGa1-xAs Stripe-Geometry Lasers

    8.5 Concluding Comments


    Index to Part A

    Index to Part B

Product details

  • No. of pages: 344
  • Language: English
  • Copyright: © Academic Press 1978
  • Published: July 28, 1978
  • Imprint: Academic Press
  • eBook ISBN: 9780323155083

About the Author

H.C. Jr. Casey

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