Handbook of Compound Semiconductors - 1st Edition - ISBN: 9780815513742, 9780815517443

Handbook of Compound Semiconductors

1st Edition

Growth, Processing, Characterization, and Devices

Authors: Paul H. Holloway Gary E. McGuire
eBook ISBN: 9780815517443
Hardcover ISBN: 9780815513742
Imprint: William Andrew
Published Date: 31st December 1996
Page Count: 926
Sales tax will be calculated at check-out Price includes VAT/GST
Price includes VAT/GST

Institutional Access

Secure Checkout

Personal information is secured with SSL technology.

Free Shipping

Free global shipping
No minimum order.


This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.


Scientists, researchers, and technicians in the microelectronic and optoelectronic industries.

Table of Contents

  1. Bulk Crystal Growth Introduction 1.0 Reduction of Dislocation Density 2.0 HB GaAs 3.0 LEC GaAs 4.0 InP 5.0 Summary References
  2. MOCVD of Compound Semiconductor Layers 1.0 Introduction 2.0 Growth Process 3.0 Specific Material Systems 4.0 Summary and Future Directions Acknowledgment References
  3. Molecular Beam Epitaxy 1.0 Introduction 2.0 Important Features of MBE 3.0 MBE System Configuration 4.0 The Growth Chamber Components 5.0 Reflection High Energy Electron Diffraction (RHEED) 6.0 Mass Spectrometry 7.0 In-Situ Auger Electron Spectroscopy (AES) 8.0 Optical Methods for Real-Time Growth Monitoring 9.0 Growth of III-V Compounds 10.0 Post-Growth Characterization 11.0 Building Blocks of Modern Devices: Bandgap Engineering in III-V Structures 12.0 Epilogue Acknowledgments References
  4. Physical and Chemical Deposition of Metals as Ohmic Contacts to InP and Related Materials 1.0 Introduction 2.0 Fundamentals Ohmic Contacts 3.0 Design Concepts of Processing Ohmic Contact to InP 4.0 Ohmic Contact Processing Technology 5.0 Conclusions Acknowledgments References
  5. Surface Processing of III-V Semiconductors 1.0 Introduction 2.0 Reactions on Cleaved (110) Surfaces 3.0 Effects of Air-Formed Contamination on Interface Characteristics 4.0 Contamination Removal 5.0 Surface Passivation 6.0 Applications 7.0 Summary and Conclusions Acknowledgments References
  6. Ion Implantation Induced Extended Defects in GaAs 1.0 Type I Defects 2.0 Type II Defects 3.0 Type III Defects 4.0 Type IV Defects 5.0 Type V Defects 6.0 Conclusions References
  7. Passivation of GaAs and InP 1.0 Surface Defects, Fermi-Level Pinning, and Defect Models 2.0 Native Oxides 3.0 Hydrogen and Nitrogen 4.0 Sulfur 5.0 Selenium 6.0 Silicon 7.0 Epitaxial Regrowth 8.0 Epilogue Acknowledgments References
  8. Wet and Dry Etching of Compound Semiconductors 1.0 Introduction 2.0 Wet Chemical Etching 3.0 Plasma Etching 4.0 Conclusion Acknowledgments References
  9. Rapid Isothermal Processing (RIP) 1.0 Introduction 2.0 Why Rapid Isothermal Processing? 3.0 History of Rapid Isothermal Processing 4.0 Scope of Rapid Isothermal Processing 5.0 Principles of Rapid Isothermal Processing 6.0 Experimental Results in Support of Photoeffects in RIP 7.0 Design of Equipment and Engineering Issues 8.0 Various Applications of RIP 9.0 Results of Various Devices and Circuits 10.0 Future Applications 11.0 Conclusion Acknowledgment References
  10. Epitaxial Lift-Off for Thin Film Compound Semiconductor Devices 1.0 Introduction 2.0 Thin Film Device Formation and Bonding 3.0 Characterization of ELO Thin Films 4.0 New Thin Film Characterization Techniques and Devices 5.0 New Integration Formulations Using Thin Films 6.0 Conclusions References
  11. Packaging 1.0 Introduction 2.0 III-V Optoelectronic Device Packages 3.0 Multichannel Device Packages for Optical Interconnect Applications 4.0 High Frequency GaAs Digital and Microwave Integrated Circuit Packages 5.0 Conclusions References
  12. Chemical, Structural and Electronic Characterization of Compound Semiconductor Surfaces and Interfaces by X-ray Photoelectron Spectroscopy and Diffraction Techniques 1.0 Introduction 2.0 X-Ray Photoelectron Spectroscopy and Diffraction 3.0 Chemistry of Surface and Interface Formation 4.0 Determination of Electronic Energy Levels at Compound Semiconductor Surfaces and Interfaces by XPS 5.0 Structure of the Near-Surface Region by XPD 6.0 Conclusions Acknowledgment References
  13. Characterization of Compound Semiconductor Material by Ion Beams 1.0 Introduction 2.0 Rutherford Backscatterring Spectrometry (RBS) 3.0 Secondary Ion Mass Spectrometry (SIMS) and Related Techniques 4.0 Summary References
  14. Optical Characterization of Compound Semiconductors 1.0 Introduction 2.0 Experimental Techniques and Instrumentation 3.0 Basic Theory and Approaches 4.0 Applications 5.0 Summary Acknowledgments List of Acronyms References
  15. Gallium Arsenide Microelectronic Devices and Circuits 1.0 A Brief Historical Perspective 2.0 Gallium Arsenide Crystals 3.0 Gallium Arsenide Devices and Structures 4.0 GaAs MESFET IC Fabrication Technology 5.0 Applications of GaAs MESFET ICs References
  16. Optoelectronic Devices 1.0 Introduction 2.0 The Solid State Laser 3.0 Modulators and Switches 4.0 Optoelectronic Integrated Circuits (OEICs) Acknowledgments References Index


No. of pages:
© William Andrew 1996
William Andrew
eBook ISBN:
Hardcover ISBN:

About the Author

Paul H. Holloway

Affiliations and Expertise

Microelectronics Center of North Carolina, Research Triangle, USA

Gary E. McGuire

Ratings and Reviews