Handbook of Compound Semiconductors

1. Bulk Crystal Growth Introduction 1.0 Reduction of Dislocation Density 2.0 HB GaAs 3.0 LEC GaAs 4.0 InP 5.0 Summary References 2. MOCVD of Compound Semiconductor Layers 1.0 Introduction 2.0 Growth Process 3.0 Specific Material Systems 4.0 Summary and Future Directions Acknowledgment References 3. Molecular Beam Epitaxy 1.0 Introduction 2.0 Important Features of MBE 3.0 MBE System Configuration 4.0 The Growth Chamber Components 5.0 Reflection High Energy Electron Diffraction (RHEED) 6.0 Mass Spectrometry 7.0 In-Situ Auger Electron Spectroscopy (AES) 8.0 Optical Methods for Real-Time Growth Monitoring 9.0 Growth of III-V Compounds 10.0 Post-Growth Characterization 11.0 Building Blocks of Modern Devices: Bandgap Engineering in III-V Structures 12.0 Epilogue Acknowledgments References 4. Physical and Chemical Deposition of Metals as Ohmic Contacts to InP and Related Materials 1.0 Introduction 2.0 Fundamentals Ohmic Contacts 3.0 Design Concepts of Processing Ohmic Contact to InP 4.0 Ohmic Contact Processing Technology 5.0 Conclusions Acknowledgments References 5. Surface Processing of III-V Semiconductors 1.0 Introduction 2.0 Reactions on Cleaved (110) Surfaces 3.0 Effects of Air-Formed Contamination on Interface Characteristics 4.0 Contamination Removal 5.0 Surface Passivation 6.0 Applications 7.0 Summary and Conc