Field-Effect and Bipolar Power Transistor Physics - 1st Edition - ISBN: 9780121058500, 9780323155403

Field-Effect and Bipolar Power Transistor Physics

1st Edition

Authors: Adolph Blicher
eBook ISBN: 9780323155403
Imprint: Academic Press
Published Date: 28th June 1981
Page Count: 336
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Field-Effect and Bipolar Power Transistor Physics introduces the physics of operation of power transistors. It deals with bipolar devices as well as field-effect power transistors. The book provides an up-to-date account of the progress made in power transistor design. This volume consists of three parts. Part I examines general considerations and reviews semiconductor surface theory as a background to understanding surface phenomena. It also discusses the effect of high carrier concentration on the semiconductor properties. Part II deals with bipolar transistors and the basic structures of power transistors. Part III discusses junction field-effect and surface field-effect transistors. This book is written for electrical engineers who design power transistor circuits, device physicists and designers, and university students. The reader should have some familiarity with small signal transistor physics as the presentation is at the senior undergraduate or first-year graduate level.

Table of Contents



Selected List of Symbols

Part I General Considerations

Chapter 1 Semiconductor Surface Theory Concepts

1.1 Flat-Band Voltage

1.2 Surface Potential in Equilibrium

1.3 Surface Charges in Strong Inversion

1.4 Threshold Voltage for Strong Inversion

1.5 Threshold Voltage under Nonequilibrium Conditions

1.6 Channel Charge under Strong Inversion in Nonequilibrium

1.7 MOS Capacitance

1.8 Silicon Surface Charges and States

1.9 Radiation Effects

1.10 Impurity Redistribution at the Oxidized Silicon Surface

1.11 Surface Mobility


Chapter 2 Semiconductor Properties at High Carrier Concentrations

2.1 Ambipolar Mobility an d Diffusivity

2.2 Carrier-Carrier Scattering

2.3 Mobility versus Impurity Concentration

2.4 Carrier Lifetime at High Injection Levels

2.5 Carrier Concentration Effect on Silicon Energy Band Gap Narrowing

2.6 Intrinsic Carrier Concentration at High Doping Levels


Chapter 3 Avalanche Breakdown

3.1 Avalanche Breakdown Voltage Calculations

3.2 p-i-n Diode Avalanche Breakdown

3.3 Plane (One-Dimensional) Junction Breakdown

3.4 Planar Junction Breakdown

3.5 Avalanche Breakdown Voltage Temperature Dependence


Chapter 4 Avalanche Breakdown Improvement Methods

4.1 Field Plate

4.2 Diffused Guard Ring

4.3 Equipotential Ring and Channel Stopper

4.4 Resistive Field Plate

4.5 Field Limiting Ring

4.6 Junction Beveling

4.7 Depletion Etch Method

4.8 Substrate Etch Termination versus Positive Beveling

4.9 Depletion Region Charge Control by Ion Implantation


Chapter 5 Selected Fabrication Techniques

5.1 Neutron Transmutation Doping (NTD)

5.2 Ion Implantation

5.3 Dry Etching

5.4 Minority Carrier Lifetime Control

5.5 Surface Stability and Device Passivation


Part II Bipolar Power Transistors

Chapter 6 Power Transistor Structures. Bipolar Transistor Models

6.1 Power Transistor Structures

6.2 Bipolar Transistor Models


Chapter 7 Current Gain at High Carrier Concentrations

7.1 Emitter Efficiency versus Emitter Concentration

7.2 Base Widening at High Currents

7.3 Emitter Current Crowding

7.4 Current Gain Fall-Off at High Currents

7.5 Current Gain Temperature Dependence

7.6 Methods of Gain Improvement


Chapter 8 Current-Voltage Characteristics of Power Transistors

8.1 Saturation Region

8.2 Quasi-Saturation Region

8.3 Collector-to-Emitter Breakdown Voltage


Chapter 9 Frequency Response. Switching Transient. Microwave Transistors

9.1 Bipolar Power Transistors Frequency Response

9.2 Bipolar Power Transistors Switching Transient

9.3 Bipolar Microwave Transistors


Chapter 10 Transistor Thermal Properties. Instabilities

10.1 Junction Temperature

10.2 Transistor Thermal Equivalent Circuit

10.3 Thermal Runaway

10.4 Principle of Least Entropy Generation. Current Filaments Formation. Hot Spots

10.5 Second Breakdown

10.6 Safe Operating Area (SOA)

10.7 Stable Hot Spots


Part III Field-Effect (Unipolar) Transistors

Chapter 11 Junction Field-Effect Transistors (JFETs)

11.1 JFET Current-Voltage Characteristics

11.2 JFET Incremental Circuit Model

11.3 Excess Gate Leakage Current and Drain Breakdown

11.4 Output Power from a JFET

11.5 JFET with Triodelike (Nonsaturating) Characteristics

11.6 JFET Structures


Chapter 12 Insulated Gate Field-Effect Transistors

12.1 MOS Transistor Static Characteristics

12.2 Two-Dimensional Current Flow in the Channel

12.3 Threshold Voltage of Short Channel MOS Transistor

12.4 Back-Bias Effect on the Threshold Voltage

12.5 MOS Transistor Threshold Control

12.6 Incremental MOS Transistor Parameters

12.7 MOS Transistor Incremental Circuit Model

12.8 Cut-Off Frequency fT

12.9 MOS Transistors with Triodelike Characteristics

12.10 Voltage Breakdown in MOS Transistors

12.11 Hot-Electron Effects


Chapter 13 MOS Power Transistor Structures and Design Considerations

13.1 MOST as a Power Amplifier

13.2 MOS Power Transistor as a Switch

13.3 Power MOST Structures

13.4 Design Considerations for Power DMOST

13.5 Gate Capacitance of MOST with Drift Region

13.6 DMOST Voltage Breakdown

13.7 DMOST Second Breakdown

13.8 Temperature Effects on MOS Transistor Characteristics-Safe Operating Area (SOA)




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© Academic Press 1981
Academic Press
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About the Author

Adolph Blicher

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