Epitaxial Microstructures
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Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.
Key Features
- Atomic-level control of semiconductor microstructures
- Molecular beam epitaxy, metal-organic chemical vapor deposition
- Quantum wells and quantum wires
- Lasers, photon(IR)detectors, heterostructure transistors
Readership
Electrical engineers, semiconductor device engineers, condensed matter physicists, and materials scientists, as well as students, academics, researchers and libraries.
Table of Contents
- E. Schubert, Delta-Doping of Semiconductors: Electronic, Optical, and Structural Properties of Materials and Devices. A. Gossard, M. Sundaram, and P Hopkins, Wide Graded Potential Wells. P. Petroff, Direct Growth of Nanometer Size Quantum Wire Superlattices. E. Kapon, Lateral Patterning of Quantum Well Heterostructures by Growth of Nonplanar Substrates. H. Temkin, D. Gershoni, and M. Panish, Optical Properties of Ga1-xInxAs/InP Quantum Wells.
Product details
- No. of pages: 426
- Language: English
- Copyright: © Academic Press 1994
- Published: August 2, 1994
- Imprint: Academic Press
- eBook ISBN: 9780080864372
About the Serial Editors
Robert Willardson
Affiliations and Expertise
WILLARDSON CONSULTING SPOKANE, WASHINGTON
Eicke Weber
Affiliations and Expertise
Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany
Albert Beer
Affiliations and Expertise
CONSULTING PHYSICIST
COLUMBUS, OHIO
About the Serial Volume Editor
Arthur Gossard
Affiliations and Expertise
University of California