Crystal Growth - From Fundamentals to Technology

1st Edition

Editors: Georg Müller Jean-Jacques Métois Peter Rudolph
Hardcover ISBN: 9780444513861
eBook ISBN: 9780080473079
Imprint: Elsevier Science
Published Date: 7th July 2004
Page Count: 434
185.00 + applicable tax
110.00 + applicable tax
137.00 + applicable tax
175.00 + applicable tax
Compatible Not compatible
VitalSource PC, Mac, iPhone & iPad Amazon Kindle eReader
ePub & PDF Apple & PC desktop. Mobile devices (Apple & Android) Amazon Kindle eReader
Mobi Amazon Kindle eReader Anything else

Institutional Access


The book contains 5 chapters with 19 contributions form internationally well acknowledged experts in various fields of crystal growth. The topics are ranging from fundamentals (thermodynamic of epitaxy growth, kinetics, morphology, modeling) to new crystal materials (carbon nanocrystals and nanotubes, biological crystals), to technology (Silicon Czochralski growth, oxide growth, III-IV epitaxy) and characterization (point defects, X-ray imaging, in-situ STM). It covers the treatment of bulk growth as well as epitaxy by anorganic and organic materials.


Universities for science and technology, research institutes, physicists and chemists in the electronic industry.

Table of Contents



Chapter 1: Fundamentals

Thermodynamics of Modern Epitaxial Growth Processes (G.B. Stringfellow) 1. Introduction 2. Thermodynamic driving force for epitaxy 3. Binary phase diagrams 4. Surface phase diagrams 5. Solution thermodynamics 5.1. Surface thermodynamics 5.2. Effect of surface on growth processes 6. Effects of surfactants 7. Antimony Actual Concepts of Interface Kinetics (K.A. Jackson) 1. General considerations 1.1. Atoms at an interface 1.2. General equation for the growth rate of crystals 1.3. Entropy change on crystallization 1.4. Early models for melt growth 1.5. Growth rate from the melt 1.6. Nucleation of layers 1.7. Growth on screw dislocations 2. Molecular dynamics simulations of crystal growth 2.1. Crystallization from the melt 3. The Kossel-Stranksi model 3.1. Bonding at an interface 3.2. Surface roughness 3.3. Monte Carlo simulations of crystallization 3.4. Equilibrium surface structure 3.5. Monte Carlo computer simulation results 3.6. Simulations of silicon growth 3.7. Kinetic roughening 4. The fluctuation dissipation theorem 4.1. Interface fluctuations 4.2. Determination of the kinetic coefficient from fluctuations 5. Non-equilibrium segregation in binary systems 5.1. Experimental observations 5.2. Monte Carlo computer modeling 5.3. Analytical model 5.4. Comparison with experiment Theory of Crystal Growth


No. of pages:
© Elsevier Science 2004
Elsevier Science
eBook ISBN:
Hardcover ISBN:

About the Editor

Georg Müller

Affiliations and Expertise

University Erlangen-Nuerenberg, Erlangen, Germany

Jean-Jacques Métois

Affiliations and Expertise

Centre de Recherche de la Matière Condensée et des Nanosciences, Marseille, France

Peter Rudolph

Affiliations and Expertise

Crystal Technology Consulting (CTC), Schönefeld, Germany