CMOS Past, Present and Future
- 1st Edition - April 3, 2018
- Authors: Henry Radamson, Eddy Simoen, Jun Luo, Chao Zhao
- Language: English
- Paperback ISBN:9 7 8 - 0 - 0 8 - 1 0 2 1 3 9 - 2
- eBook ISBN:9 7 8 - 0 - 0 8 - 1 0 2 1 4 0 - 8
CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV… Read more
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Request a sales quoteCMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends.
The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements.
- Addresses challenges and opportunities for the use of CMOS
- Covers the latest methods of strain engineering, materials integration to increase mobility, nano-scaled transistor processing, and integration of CMOS with photonic components
- Provides a look at the evolution of CMOS technology, including the origins of the technology, current status and future possibilities
Materials scientist researchers and electronic engineers in research and design
2. Basic definitions and equations
3. Electrical measurements (IV, short channel effects, mobility and noise)
4. CMOS Architecture
5. Strain engineering (stressor materials in source/drain regions, strain induced by processing, stress liners)
6. High-k and metal gate (Almost all known high-k materials and metal gates)
7. Channel materials (Ge, GeSn, SiGe, Graphene and other II-D crystals, III-V compounds)
8. Contacts (Silicide formation, contact resistance, parasitic contacts)
9. Integration with photonic components (CMOS with lasers, detectors)
10. Technology roadmap (starting from 50’s to unknown future)
11. Authors’ final words
- No. of pages: 278
- Language: English
- Edition: 1
- Published: April 3, 2018
- Imprint: Woodhead Publishing
- Paperback ISBN: 9780081021392
- eBook ISBN: 9780081021408
HR
Henry Radamson
ES
Eddy Simoen
JL
Jun Luo
CZ