Advances in the Understanding of Crystal Growth Mechanisms - 1st Edition - ISBN: 9780444825049, 9780444598004

Advances in the Understanding of Crystal Growth Mechanisms

1st Edition

Editors: T. Nishinaga K. Nishioka J. Harada A. Sasaki H. Takei
Hardcover ISBN: 9780444825049
eBook ISBN: 9780444598004
Imprint: North Holland
Published Date: 14th March 1997
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This book contains the results of a research project entitled Crystal Growth Mechanisms on an Atomic Scale, which was carried out for 3 years by some 72 reseachers. Until recently in Japan, only the technological aspects of crystal growth have been emphasized and attention was paid only to its importance in industry. However the scientific aspects also need to be considered so that the technology of crystal growth can be developed even further. This project therefore aimed at understanding crystal growth and the emphasis was on finding growth mechanisms on an atomic scale.

Table of Contents

Preface. Part I. Crystal Growth Theory and Simulations. Thermodynamic vs. kinetic critical nucleus and the reversible work of nucleus formation (K. Nishioka). The terrace-step-kink approach and the capillary-wave approach to fluctuation properties of vicinal surfaces (T. Yamamoto, N. Akutsu, Y. Akutsu). Fluctuation and morphological instability of steps in a surface diffusion field (M. Uwaha). Pattern formation of a crystal growing in a diffusion field (Y. Saito). Step structures of Si(111) vicinal surfaces (A. Natori). Step growth mechanism on (001) surfaces of diamond structure crystals (M. Tsuda, M. Hata). Monte Carlo simulation of MBE growth (T. Irisawa, Y. Arima). Crystal growth kinetics on stepped surface by the path probability method (K. Wada, H. Ohmi). Part II. Growth Kinetics.Inter-surface diffusion of cation incorporation in MBE of GaAs and InAs (T. Nishinaga, X.Q. Shen). Study of surface chemical reactions in GaAs atomic layer epitaxy by in situ monitoring methods (A. Koukito). Surface kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium (H. Ohno). Atomic ordering in epitaxial alloy semiconductors: from the discoveries to the physical understanding (H. Nakayama, T. Kita, T. Nishino). Monte Carlo simulation of microstructures in ordered III-V semiconductor alloys (N. Kuwano, K. Oki). Control of rotational twins on heterointerface of fluoride and semiconductors (K. Tsutsui et al). Growth of Ag crystallites on Mo(110) substrate observed by in situ SEM (Y. Gotoh et al.). Induction time of electrical nucleation in supercooled sodium acetate trihydrate aqueous solution (Y. Iba, T. Ohachi). Growth mechanism of smoke particles (C. Kaito, S. Kimura, Y. Saito). Part IIII. Observations of Growth Surface and Interface. Thermally oxidized layers on Si-wafers - Surface X-ray scattering and field ion microscopy (J. Harada et al.). Atom exchange process at the growth front in OMVPE revealed by X-ray CTR scattering measurement (Y. Takeda, M. Tabuchi). Surface structures during silicon growth on an Si(111) surface (A. Ichimiya, N. Nakahara, Y. Tanaka). REM studies of surfactant-mediated epitaxy (H. Minoda, K. Yagi). Oscillations of the intensity of scattered energetic ions from growing surface (K. Nakajima et al.). Scanning tunneling microscopy study of solid phase epitaxy processes on the Si(001)-2x1 surface (T. Yao et al.). Crystal growth of polymers in thin films (K. Izumi et al.). Crystal growth and control of molecular orientation and polymorphism in physical vapor deposition of long-chain compounds (K. Sato et al.). Polymer crystallization approached from a new viewpoint of chain sliding diffusion (M. Hikosaka). Part IV. Mechanisms of Heteroepitaxy. Initial growth layer, island formation, and critical thickness of InAs heteroepitaxy on GaAs substrate (A. Sasaki). Effects of buffer layers in heteroepitaxy of gallium nitride (K. Hiramatsu et al.). Growth processes in the heteroepitaxy of Ge and Si1-xGex on Si substrates using gas-source molecular beam epitaxy (Y. Yasuda, H. Ikeda, S. Zaima). Crystal growth mechanisms in III-V/Si heteroepitaxy (T. Soga, M. Umeno). Atomic layer epitaxy of GaAs, A1As and GaN using GaC13 and A1C13 (F. Hasegawa). Surface diffusion processes of Ga and A1 in MBE - formation of 10-nm scale GaAs ridge structures (T. Noda et al.). Heteroepitaxy of cadmium telluride on sapphire (M. Kasuga et al.). Formation of strain-free heteroepitaxial structures by annealing under ultrahigh pressure (H. Ishiwara, T. Hoshino). Part V. Crystal Growth and Mechansim of Complex Systems. Growth mechanism of oxide superconductor crystals (H. Takei). An atomic level analysis of crystal growth mechanism in complex systems by means of nano-optical microscopy and AFM (H. Komatsu et al.). A comprehensive treatise on crystal growth from aqueous solutions (T. Ogawa). Crystallization of sol-gel derived ferroelectric thin films with preferred orientation (S. Hirano, T. Yogo, W. Sakamoto). Anisotropy in microscopic structures of ice-water and ice-vapor interfaces and its relation to growth kinetics (Y. Furakawa, H. Nada). Growth of InGaSbBi bulk crystals in InSb seeds and rapid permeation of Ga into InSb during growth (M. Kimagawa, Y. Hayakawa). Subject index.


© North Holland 1997
North Holland
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About the Editor

T. Nishinaga

K. Nishioka

J. Harada

A. Sasaki

H. Takei

Affiliations and Expertise

The University of Tokyo, Tokyo, Japan