Advances in Chemical Mechanical Planarization (CMP)

Part One - CMP of dielectric and metal films

1. Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP)

2. Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond

3. Electrochemical techniques and their applications for CMP of metal films

4. Ultra-low-k materials and chemical mechanical planarization (CMP)

5. CMP processing of high mobility channel materials - alternatives to Sis

6. Multiscale modeling of chemical mechanical planarization (CMP)

7. Polishing of SiC films

8. Chemical and physical mechanisms of CMP of gallium nitride

9. Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes

10. Transient copper removal rate phenomena with implications for polishing mechanisms

11. Environmental aspects of planarization processes

12. Preparation and characterization of slurry for CMP

13. Chemical metrology methods for CMP quality

14. Diamond disc pad conditioning in chemical mechanical polishing

15. Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy

16. Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters

17. Approaches to defect characterization, mitigation and reduction

18. Challenges and solutions for post-CMP cleaning at device and interconnect levels

19. Applications of chemical mechanical planarization (CMP) to More than Moore devices

20. CMP for phase change materials

21. CMP pads and their performance

22. Latest developments in the understanding of PVA brush related issues during post CMP (pCMP) cleaning