Advanced MOS Device Physics

Advanced MOS Device Physics

1st Edition - December 28, 1988

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  • Editor: Norman Einspruch
  • eBook ISBN: 9780323153133

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VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.

Table of Contents

  • List of Contributors


    Chapter 1 Approaches to Scaling

    I. Introduction

    II. A Review of One-Dimensional MOSFET Drain Current Models

    III. A Short-Channel MOS Drain Current Model

    IV. Summary


    Chapter 2 Current Trends in MOS Process Integration

    I. Introduction

    II. n-Channel MOS Transistors for CMOS or NMOS Technologies

    III. p-Channel MOS Transistors

    IV. Well Formation for CMOS

    V. MOS Device Isolation

    VI. Merged Bipolar/CMOS BiCMOS Processes

    VII. Silicon-on-Insulator Technologies


    Chapter 3 Hot Carrier Effects

    I. Introduction

    II. Channel Electric Field

    III. Substrate Current Model

    IV. Ydsat and Isub Dependence on Vg and L

    V. Gate Current and Lucky Electron Model

    VI. Thermionic Gate Current Model

    VII. Hot Carrier Mean Free Path and Temperature

    VIII. Effect of Non-Maxwellian Assumption

    Chapter 4 Hot-Carrier-Resistant Structures

    I. Introduction

    II. Electric Field Reduction

    III. Graded Drain Structures

    IV. Gate-to-Source/Drain Overlap

    V. Device Processing Variations

    VI. Circuit Design Considerations

    VII. Optimization and Trade-Offs


    Chapter 5 Low-Temperature CMOS

    I. Introduction

    II. Low-Temperature Device Physics

    III. Material Properties

    IV. Device Reliability Issues

    V. Circuit and System Performance


    Chapter 6 MOSFET Modeling for Circuit Simulation

    I. Introduction

    II. Current-Voltage Characteristics

    III. Capacitance Characteristics

    IV. Parasitic Elements

    V. Parameter Extraction

    VI. Summary

    Appendix A

    Appendix B


    Chapter 7 Latchup

    I. Introduction

    II. Latchup Fundamentals

    III. Practical Methods of Circuit Evaluation

    IV. Latchup Prevention Techniques


    Chapter 8 Quantum Mechanical and Nonstationary Transport Phenomena in Nanostructured Silicon Inversion Layers

    I. Introduction

    II. Semiclassical Conductivity of Quantum MOS Devices

    III. Quasi-One-Dimensional MOSFETS

    IV. Surface Superlattice Transistors

    V. Dynamics of Electron Transport in High Electric Fields



Product details

  • No. of pages: 382
  • Language: English
  • Copyright: © Academic Press 1988
  • Published: December 28, 1988
  • Imprint: Academic Press
  • eBook ISBN: 9780323153133

About the Editor

Norman Einspruch

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