Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Edited by

  • Constantinos Christofides, University of Cyprus
  • Gerard Ghibaudo, Labaratoire de Physique des Composants a Semiconducteur

Series Editor:

  • Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
  • Eicke Weber, Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.
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Researchers, graduate students, and professionals dealing with semiconductors; materials scientists; electrical engineers; engineers and physicists working in microelectronics.


Book information

  • Published: May 1997
  • ISBN: 978-0-12-752146-6

Table of Contents

Optical Characterization:M Fried, T. Lohner, and J. Gyulai, Ellipsometric Analysis.A. Seas and C. Christofides, Transmission and Reflection Spectoscopy on Ion Implanted Semiconductors.A. Othonos, Photoluminescence and Raman Scattering of Ion Implanted Semiconductors: Influence of Annealing.Thermal Wave Analyses:C. Cristofides, Photomodulated Thermoreflectance Investigation of Implanted Wafers: Annealing Kinetics of Defects.U. Zammit, Photothermal Delection Spectroscopy Characterization of Ion-Implanted and Annealed Si Films.A. Mandelis, A. Budiman, and M. Vargas, Photothermal Deep Level Transient Spectroscopy of Impurities and Defects in Semiconductors.Quantum Well Structures and Compound Systems:R. Kalish and S. Charbonneau, Ion Implantation into Quantum Well Structures.A.M. Myasnikov and N.N. Gerasimenko, Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors.Subject Index.