From Physics to Devices: Light Emissions in Silicon
Light Emissions in Silicon: From Physics to DevicesEdited by
- David Lockwood, National Research Council, Institute of Microstructure Sciences
- Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
- Eicke Weber, Fraunhofer-Institut fur Solare Energiesysteme ISE, Freiburg, Germany
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Libraries, researchers, graduate students and practitioners in materials science (electronic materials field), and electrical engineering (field of electronic devices).
Semiconductors and Semimetals
Hardbound, 351 Pages
Published: September 1997
Imprint: Academic Press
- D.J. Lockwood, Light Emission in Silicon. G. Abstreiter, Light Emission in Si/Ge Atomic Layer Structures. T.G. Brown and D.G. Hall, Radiative Isoelectronic Impurities in Silicon and SiliconGermanium Alloys and Superlattices. J. Michel, L.V.C. Assali, M.T. Morse, and L.C. Kimerling, Erbium in Silicon. Y. Kanemitsu, Silicon and Germanium Nanoparticles. P.M. Fauchet, Porous Silicon: Photoluminescence and Electroluminescent Devices. C. Delerue, G. Allen, and M. Lannoo, Theory of the Radiative and Non Radiative Processes in Silicon Nanocrystallites. L. Brus, Silicon Polymers and Nanocrystals.