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MICROELECTRONICS RELIABILITY
Former title: Microelectronics and Reliability

ISSN: 0026-2714


Editorial Board


Joint Editors-in-Chief

N.D. Stojadnovic
Department of Microelectronics, Faculty of Electronic Engineering, University of Nis, Aleksandra Medvedeva 14, 18000 Nis, Serbia, Tel: 381 18 529 326, Fax: 381 18 588 399, Email: nstojadinovic@elfak.ni.ac.yu
M.G. Pecht
CALCE Electronic Products and Systems Center, University of Maryland, College Park, MD 20742, USA, Fax: +1 301 314 9269, Email: pecht@eng.umd.edu


Associate Editors:

G. Ghibaudo
Directeur de Recherche au CNRS, IMEP, ENSERG, BP 257, 38016 Grenoble, France, Tel: 00 33 476 85 60 58, Fax: 00 33 476 85 60 70, Email: ghibaudo@enserg.fr
Y.S. Lai
Advanced Semiconductor Engineering, Inc., Nantze, Kaohsiung, Taiwan, Tel: 886 7 361 7131 ext. 15285, Email: Yishao_Lai@aseglobal.com
J.H. Stathis
IBM Research, Yorktown Heights, NY 10598, USA, Tel: +1 914 945 2559, Fax: +1 914 945 2141, Email: stathis@us.ibm.com
Hei Wong
Department of Electronic Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, Fax: +852 2788 7791, Email: eehwong@cityu.edu.hk


Founding Editor:

G.W.A. Dummer
Malvern, UK


Editorial Advisory Board:

M. Amagai
Texas Instruments Japan, Oita, Japan
E. Atanassova
Bulgarian Academy of Sciences, Sofia, Bulgaria
Y.C. Chan
City University of Hong Kong, Hong Kong
C.Y. Chang
National Chiao Tung University, Hsinchu, Taiwan, ROC
P. Chaparala
National Semiconductor Corp., 2900 Semiconductor, Santa Clara, CA, USA
D. Das
CALCE Electronic Products and System Center, College Park, MD, USA
G. De Mey
University of Ghent, Belgium
S. Dimitrijev
Griffith University, Nathan, Brisbane, Australia
A. Dziedzic
Wroclaw University of Technology, Wroclaw, Poland
F. Fantini
University of Modena, Modena, Italy
D.M. Fleetwood
Vanderbilt University, Nashville, TN, USA
D. Flores
Centro Nacional de Microelectronica, Bellaterra, Barcelona, Spain
M. Fukuda
NTT Optoelectronics Laboratories, Kanagawa, Japan
R. Ghaffarian
California Institute of Technology, Pasadena, CA, USA
G. Groeseneken
IMEC, Leuven, Belgium
H. Iwai
Tokyo Institute of Technology, Japan
K.N. Kim
Samsung, Yongin City, South Korea
N. Labat
Universite Bordeaux 1, Talence, Cedex, France
C.J.M. Lasance
Philips Centre for Manufacturing Technology, Eindhoven, The Netherlands
J.J. Liou
University of Central Florida, Orlando, FL, USA.
R. Menozzi
Universita' di Parma, Parma, Italy
E. Miranda
Universidad de Buenos Aires, Buenos Aires, Argentina
H.S. Momose
Advanced CMOS Technology Department, TOSHIBA Corporation, 8, Shin-Sugita-cho, Isogo-ku, Yokohama 235-8522, Japan
A.J. Mouthaan
University of Twente, Enschede, The Netherlands
A. Nathan
University of Waterloo, Ontario, Canada
A. Ortiz-Conde
Universidad Simon Bolivar, Caracas, Venezuela
P. Perdu
DCT/AQ/LE, Toulouse, Cedex, France
V.S. Pershenkov
Moscow Engineering Physics Institute, Moscow, Russia
M.K. Radhakrishnan
Reliability Consultant, Singapore
W. Stadler
Infineon Technologies, Munich, Germany
V. Szekely
Technical University of Budapest, Hungary
R. Vollertsen
Infineon Technologies AG, Muenchen, Germany
S. Yoshitomi
Toshiba Corporation, Kawasaki, Japan.
G.Q.K. Zhang
Strategy/Philips Semiconductors, Eindhoven, The Netherlands
M. Zwolinski
University of Southampton, Southampton, UK
Microelectronics Reliability
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