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Microelectronics Reliability

Microelectronics Reliability
ISSN: 0026-2714
Imprint: PERGAMON
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Statistics
Impact Factor: 1.290
5-Year Impact Factor: 1.182
Issues per year: 12

Editorial Board



Joint Editors-in-Chief

Professor N.D. Stojadinovic
Dept. of Microelectronics, Fac. Electronic Engineering, University of Nis, Aleksandra Medvedeva 14., 18000 Nis, Serbia, Email: nstojadinovic@elfak.ni.ac.yu
Professor M. Pecht
CALCE Electronic Products Syst, University of Maryland, College Park, MD 20742, USA, Fax: 001301 314 9269, Tel: 0013014055323, Email: pecht@calce.umd.edu

Associate Editors

Dr. G. Ghibaudo
IMEP, ENSERG, BP 257, 38016 Grenoble, France, Fax: +33 476 85 60 70, Tel: +33 476 85 60 58
Dr. Y-S. Lai
Central Labs, Advanced Semiconductor Engineering, Inc., 26 Chin 3rd RD, 811 Nantze, Kaohsiung, Taiwan, ROC, Fax: 886 736 130 94, Tel: 886 736 171 31 ext. 15285
Dr. J. Stathis
Watson Research Center, IBM Research, 1101 Kitchawan Road, Yorktown Heights, 10598, USA, Tel: +914 945 2559
Professor H. Wong
Dept. of Electronic Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Cheung Sha Wan, Kowloon, Hong Kong, Fax: 852 2788 7791

Founding Editor

G.W.A. Dummer
Malvern, UK

Editorial Advisory Board

M. Amagai
Texas Instruments Japan, Oita, Japan
E. Atanassova
Bulgarian Academy of Sciences, Sofia, Bulgaria
Y.C. Chan
City University of Hong Kong, Hong Kong, China
C.Y. Chang
National Chiao-Tung Univ, Hsinchu, China
P. Chaparala
Advanced Process Technology Development, Santa Clara CA, USA
D. Das
CALCE Electronic Products & System Centre, College Park, MD, USA
G. De Mey
Universiteit Gent, Gent, Belgium
S. Dimitrijev
Griffith University, Nathan, QLD, Australia
A. Dziedzic
Wroclaw University of Technology, Wroclaw, Poland
F. Fantini
Università degli Studi di Modena e Reggio Emilia, Modena, Italy
D.M. Fleetwood
Vanderbilt University, Nashville, TN, USA
D. Flores
Consejo Superior de Investigaciones Científicas (CSIC), Bellaterra, Barcelona, Spain
M. Fukuda
Nippon Telegraph and Telephone (NTT), Kanagawa, Japan
R. Ghaffarian
California Institute of Technology, Pasadena, CA, USA
G. Groeseneken
IMEC, Leuven, Belgium
H. Iwai
Tokyo Institute of Technology, Yokohama, Japan
K.N. Kim
Samsung, Yongin City, South Korea
N. Labat
Institut Universitaire de Technologie, Talence, France
C.J.M. Lasance
Philips Centre for Manufacturing Technology, Eindhoven, Netherlands
J. Liou
University of Central Florida, Orlando, FL, USA
I. Manic
University of Nis, Nis, Serbia
R. Menozzi
Università di Parma, Parma, Italy
E. Miranda
Universidad de Buenos Aires, Buenos Aires, Argentina
H. Momose
Toshiba Corp, Isogo-Ku, Yokohama, Japan
A.J. Mouthaan
Universiteit Twente, Enschede, Netherlands
A. Nathan
University of Waterloo, Waterloo, ON, Canada
A. Ortiz-Conde
Universidad Simon Bolivar, Caracas, Venezuela
P. Perdu
DCT/AQ/LE, Toulouse, France
V.S. Pershenkov
M. V. Lomonosov Moscow State University, Moscow, Russian Federation
M.K. Radhakrishnan
Singapore, Singapore
W. Stadler
Infineon Technologies AG, München, Germany
V. Szekely
Technical University of Budapest, Budapest, Hungary
R. Vollertsen
Infineon Technologies AG, München, Germany
S. Yoshitomi
Toshiba Corp, Kawasaki, Japan
G.Q.K. Zhang
Philips Semiconductors, Eindhoven, Netherlands
M. Zwolinski
University of Southampton, Highfield, Southampton, UK
 
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