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| PROCESSING OF 'WIDE BAND GAP SEMICONDUCTORS
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By
Stephen J. Pearton, University of Florida, Gainesville, USA
Description
Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years,
principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10
million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are
under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview
of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific
technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing
on doping, etching, oxidation passivation, growth techniques and more.
Audience
Engineers working in the fabrication and processing of blue/green light emitters and high power/high temperature electronics (such as
automotive electronics), as well as technicians, researchers and scientists, and students.
Contents
1. Doping Limits and Bandgap Engineering in Wide Gap IIVI Compounds
Wolfgang Faschinger
1.0 INTRODUCTION
2.0 AB INITIO CALCULATIONS
OF DOPING LIMITATIONS
3.0 THE FERMI LEVEL PINNING MODEL
4.0 DOPING AND BAND STRUCTURE ENGINEERING
5.0 OHMIC CONTACT TO p-ZnSe
6.0 CONCLUSIONS
2. Epitaxial Growth of II-VI Compounds by MOVPE
Wolfgang Gebhardt and Berthold Hahn
1.0 INTRODUCTION
2.0 BINARY
COMPOUNDS
3.0 TERNARY AND QUATERNARY COMPOUNDS
4.0 CONCLUDING REMARKS
3. Ohmic Contacts to II-VI and III-V Compound Semiconductors
Tae-Jie Kim and Paul H. Holloway
1.0 INTRODUCTION
2.0 OHMIC CONTACTS TO GaAs
3.0 OHMIC CONTACTS TO InP
4.0 OHMIC CONTACTS TO
GaN
5.0 OHMIC CONTACTS TO ZnSe
6.0 CONCLUSIONS
4. Dry Etching of SiC
Joseph R. Flemish
1.0 INTRODUCTION
2.0 REQUIREMENTS OF DRY
ETCHING IN SiC DEVICE FABRICATION
3.0 CHEMISTRY OF SiC DRY ETCHING
4.0 METHODS FOR PLASMA-ASSISTED ETCHING OF SiC
5.0 PROFILE
AND MORPHOLOGY CONTROL WITH ECR ETCHING
6.0 SUMMARY
5. Processing of Silicon Carbide for Devices and Circuits
Jeffrey B. Casady
1.0
BACKGROUND
2.0 SILICON CARBIDE DEVICE PROCESSING
3.0 SURVEY OF SiC DEVICES
4.0 SiC CIRCUITS AND SENSORS
5.0 CONCLUSIONS
6.
Plasma Etching of III-V Nitrides
Randy J. Shul
1.0 INTRODUCTION
2.0. ETCH TECHNIQUES
3.0 PLASMA CHEMISTRY
4.0 PRESSURE
5.0
ION ENERGY AND PLASMA DENSITY
6.0 TEMPERATURE DEPENDENCE
7.0 GROWTH TECHNIQUE
8.0 ETCH PROFILE, MORPHOLOGY, AND STOICHIOMETRY
9.0 PLASMA INDUCED DAMAGE
10.0 PLASMA ETCH APPLICATIONS
11.0 CONCLUSIONS
7. Ion Implantation in Wide Bandgap Semiconductors
John
C. Zolper
1.0 INTRODUCTION
2.0 IMPLANTATION ISOLATION
3.0 IMPLANTATION DOPING
4.0 IMPURITY REDISTRIBUTION
5.0 IMPLANTATION
DAMAGE: CREATION AND REMOVAL
6.0 DEVICE DEMONSTRATIONS
7.0 FUTURE WORK AND CONCLUSIONS
8. Rare Earth Impurities in Wide Gap Semiconductors
John M. Zavada
1.0 INTRODUCTION
2.0 BASIC CONCEPTS
3.0 INCORPORATION OF RE ATOMS IN WIDE GAP SEMICONDUCTORS
4.0 RE3+ PHOTOLUMINESCENCE
5.0 ELECTRICAL ACTIVATION OF RE3+ IONS
6.0 SUMMARY
9. SIMS Analysis of Wide Bandgap Semiconductors
Robert G. Wilson
1.0 INTRODUCTION
2.0 WIDE BANDGAP MATERIALS DISCUSSED HERE
3.0 SECONDARY ION MASS SPECTROMETRY (SIMS)
4.0 SIMS ISSUES
5.0 QUANTIFICATION
6.0
DIAMOND
7.0 SiC
8.0 ZnSe
9.0 LiNbO3 (AND LiTaO3)
10.0 GROUP III-NITRIDES
10. Hydrogen in Wide Bandgap Semiconductors
Stephen
J. Pearton and Jewor W. Lee
1.0 INTRODUCTION
2.0 HYDROGEN INCORPORATION IN WIDE BANDGAP SEMICONDUCTORS
3.0 HYDROGEN IN GaN
4.0 HYDROGEN IN SiC
5.0 DIAMOND
6.0 II-VI COMPOUNDS
11. Diamond Deposition and Characterization
Donald R. Gilbert and Rajiv K. Singh
1.0 INTRODUCTION
2.0 PROPERTIES
3.0 FABRICATION
4.0 MODIFICATION
5.0 CHARACTERIZATION
6.0 APPLICATIONS
Index
| Bibliographic details |
Hardbound, 591 pages, publication date: JUN-2000
ISBN-13: 978-0-8155-1439-8
ISBN-10: 0-8155-1439-5
Imprint: WILLIAM ANDREW
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Last update: 3 Oct 2009
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