SEMICONDUCTOR MATERIALS AND PROCESS TECHNOLOGY HANDBOOK
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By Gary F. McGuire, MCNC, Electronic Technologies Division, Research Triangle Park, NC
Description This handbook is a broad review of semiconductor materials and process technology, with emphasis on very large-scale integration (VLSI)
and ultra large scale integration (ULSI). The technology of integrated circuit (IC) processing is expanding so rapidly that it can be
difficult for the scientist working in one area to keep abreast of developments in other areas of the field. This handbook solves this
problem by bringing together "snapshots" of the various aspects of the technology.
Audience
Materials scientists and engineers in the semiconductor field.
Contents Introduction
References
1. Silicon Materials Technology
Introduction
Silicon Crystal Growth
Wafer Preparation
Material Properties
Process-Induced Defects
Oxygen in Silicon
References
2. The Thermal Oxidation of Silicon and Other Semiconductor Materials
Introduction
and Background
Silicon Thermal Oxidation Kinetics
Properties of Thermal Oxides
Process Variable/Oxidation Reaction Dependencies
Oxidation Mechanism
Other Oxidation Processes
Future Trends
References
3. Chemical Vapor Deposition of Silicon and Its Compounds
Introduction
Epitaxial Deposition
HCI In Situ Etching
Gettering
Selective Deposition
CVD of Dielectric Films
X-Ray Lithography
Mask Fabrication
References
4. Chemical Etching and Slice Cleanup of Silicon
Introduction
Orientation Dependent Cleaving of Silicon
Orientation Dependent Etching and Orientation Dependent Deposition
(110) Orientation Dependent Effects
Defect Delineation Etching
Slice Cleanup
Precleanup Solvent Rinse
Choline Cleanup Process
References
5. Plasma Processing: Mechanisms and Applications
Introduction
Fundamental Aspects
Plasma Etching
Plasma Deposition
Summary and Conclusions
References
6. Physical Vapor Deposition
Introduction
The Vacuum Environment
Evaporation
Molecular Beam Epitaxy
Sputtering
Thin Film Growth and Properties
Metallization
of Semiconductor Devices
References
7. Diffusion and Ion Implantation in Silicon
Introduction
Continuum Theory
Atomic Theory
of Diffusion
The Role of Point Defects in Silicon Processing
Diffusion in the Presence of Excess Point Defects
Characteristics
of Silicon Self-Diffusion
Dopant Diffusion in Silicon
Design Considerations for Implanted-Diffused Layers
Ion Implantation
References
8. Microlithography for VLSI
Introduction
Forming the Resist Film
Generation of the Aerial Image for Electron Beam Mask Making
Interaction of Electrons with the Workpiece
Exposure and Development of Photoresist on Semiconductor Wafers
Formation of the Aerial
Image in Projection Mask Aligners
Interaction of Ultra-Violet Light with Photoresist
Exposure and Development of Photoresist Films
on Reflective Substrates
Emerging New Technologies
References
9. Metallization for VLSI Interconnect and Packaging
Introduction
Wiring Structure
Impact of Device Scaling
Electrical Characteristics
Material Reaction
Metallization Reliability
Summary
References
10. Characterization of Semiconductor Materials
Introduction
Surface Analysis Techniques
Imaging Analysis Techniques
Bulk Analysis Techniques
References
Index
Bibliographic details
Hardbound, 688 pages, publication date: DEC-1988
ISBN-13: 978-0-8155-1150-2
ISBN-10: 0-8155-1150-7
Imprint: WILLIAM ANDREW
Price and Ordering
Price: GBP 111.99 EUR 131.95 USD 185
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