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| HANDBOOK OF SEMICONDUCTOR SILICON TECHNOLOGY
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By
William C. O'Mara
Robert B. Haber
Lee P. Hunt
Description
This handbook is a comprehensive summary of the science, technology and manufacturing of semiconductor silicon materials. Every known
property of silicon is detailed. A complete set of binary phase diagrams is included. Practical aspects such as materials handling,
safety, impurity and defect reduction are also discussed in depth.
Fundamentals in the areas of silicon precursor compounds, polysilicon,
silicon crystal growth, wafer fabrication, epitaxial and CVD deposition are addressed by experts in these fields. Materials properties
covered include electrical, optical and mechanical properties, deep level impurities and carrier lifetime, and thermochemistry, as well
as specific sections on oxygen, carbon, and nitrogen impurities. The book contains an extensive set of references, tables of materials
constants, and silicon properties, and a presentation on the state of the art of materials manufacturing.
Audience
Engineers and technologists in the semiconductor, optoelectronic, optics, cutting tool, refractory fibers, filter and other industries.
Contents
1. Silicon Precursors: Their Manufacture and Properties
1.1 Introduction
1.2 Precursor Manufacture
1.3 Physical Properties and Critical
Constants
1.4 Safety
Appendix
References
2. Polysilicon Preparation
2.1 The Technical History of Polycrystalline Silicon
2.2
Polysilicon Production Technology (Most Practiced)
2.3 Alternative Chlorine-Based, Semiconductor-Grade Polysilicon Feedstocks
2.4
Alternate Polysilicon Reactor Selections
2.5 Evaluation of Semiconductor-Grade Polysilicon
2.6 Future of Polysilicon
References
3. Crystal Growth of Silicon
3.1 Introduction
3.2 Melt Growth Theory
3.3 Practical Aspect of Cz Crystal Growth
3.4 Novel Czochralski
Crystal Growth
3.5 Trends in Silicon Crystal Growth
3.6 Summary and Conclusion
References
4. Silicon Wafer Preparation
4.1 Introduction
4.2 Crystal Shaping
4.3 Wafering
4.4 Edge Contouring
4.5 Lapping
4.6 Polishing
4.7 Cleaning
4.8 Miscellaneous Operations
4.9 In-Process Measurements
4.10 Discussion
References
5. Silicon Epitaxy
5.1 Introduction
5.2 Techniques for Silicon Epitaxy
5.3 Surface Preparation for Silicon Epitaxial Growth
5.4 Growth of Silicon Epitaxy by CVD
5.5 Dopant Incorporation
5.6 Surface
Morphology and Epitaxial Defects
5.7 Pattern Shift and Distortion
5.8 Equipment for Epitaxy by CVD
5.9 Trends for the Future in
Silicon Epitaxy
References
6. Silicon Material Properties
6.1 Introduction
6.2 Crystallographic Properties
6.3 Electrical Properties
6.4 Optical Properties
6.5 Thermal and Mechanical Properties
References
7. Oxygen, Carbon and Nitrogen in Silicon
7.1 Introduction
7.2 Properties of Dissolved Oxygen in Silicon
7.3 Oxygen Cluster and Precipitate Formation
7.4 Quantitative and Qualitative Measurement
of Oxygen
7.5 Oxygen Thermal Donor
7.6 Mechanical Strengthening and Wafer Warpage
7.7 Device Processing
7.8 Carbon in Silicon
7.9 Nitrogen in Silicon
References
8. Carrier Lifetimes in Silicon
8.1 Introduction
8.2 Defects
8.3 Recombination Lifetime
8.4 Generation Lifetime
8.5 The Role of Lifetime on Device Currents
8.6 Lifetime Measurement Techniques
8.7 Summary
References
List of Symbols
9. Preparation and Properties of Polycrystalline-Silicon Films
9.1 Introduction
9.2 Deposition
9.3 Structure
9.4 Oxidation
9.5 Conduction
9.6 Applications
References
10. Silicon Phase Diagrams
10.1 Introduction
10.2 Phase Diagrams
10.3 Phase Changes
10.4 Techniques for Determination of Phase Diagrams
10.5 Segregation Coefficient and Zone Refining
10.6 Retrograde
Solubility
10.7 Silicon Phase Diagrams
References
Index
| Bibliographic details |
Hardbound, 815 pages, publication date: DEC-1990
ISBN-13: 978-0-8155-1237-0
ISBN-10: 0-8155-1237-6
Imprint: WILLIAM ANDREW
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USD 195
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Last update: 3 Oct 2009
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