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| GERMANIUM-BASED TECHNOLOGIES
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From Materials to Devices
To order this title, and for more information, click here
Edited By
Cor Claeys, Interuniversity MicroElectronics Center (IMEC), Leuven, Belgium and Katholieke Universiteit Leuven, Belgium
Eddy Simoen, Interuniversity MicroElectronics Center (IMEC), Leuven, Belgium and Katholieke Universiteit Leuven, Belgium
Description
Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of
planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium,
which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From
Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology
and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts
with a world-wide recognition and involved in the leading research in the field.
The book also covers applications and the use of Ge
for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of
semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should
benefit from this unique book.
Audience
For a wide audience including students, scientists, process engineers, material manufacturers, semiconductor research centres and universities
Contents
Introduction (C. Claeys, E. Simoen).
Chapter 1. Germanium Materials (B. Depuyt et al.).
Chapter 2. Grown-in Defects
in Ge (J. Vanhellemont et al.).
Chapter 3. Diffusion and Solubility of Dopants in Germanium (E. Simoen, C. Claeys).
Chapter 4. Oxygen in Germanium (P. Clauws).
Chapter 5. Metals in Germanium (E. Simoen, C. Claeys).
Chapter 6. Ab-initio
Modelling of Defects in Germanium (R. Jones, J. Coutinho).
Chapter 7. Radiation Performance of Ge Technologies (V. Markevich et
al.).
Chapter 8. Electrical Performance of Devices (M. Houssa et al.).
Chapter 9. Device Modeling (D. Esseni et al.).
Chapter 10. Nanoscale Germanium MOS Dielectrics and Junctions (C. On Chui, K.C. Saraswat).
Chapter 11. Advanced Germanium MOS Devices
(C. On Chui, K.C. Saraswat).
Chapter 12. Alternative Ge Applications.
Chapter 13. Trends and Outlook (E. Simoen, C. Claeys).
| Bibliographic details |
Hardbound, 480 pages, publication date: MAR-2007
ISBN-13: 978-0-08-044953-1
ISBN-10: 0-08-044953-0
Imprint: ELSEVIER
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| Price and Ordering |
Price:
GBP 105
USD 166
EUR 111
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030/657
Last update: 30 Jan 2010
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