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By Mohamed Henini, The University of Nottingham, School of Physics and Astronomy, UK
Description * This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering
the field.
* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas
*
Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research
community.
The high speed lasers operating at wavelength of 1.3 m and 1.55 m are very important light sources in optical communications
since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths.
These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material
system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates,
especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996
a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers.
In
this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical
understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current
status of research and development.
Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current
available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate
students, researchers and practitioners in the fields of Semiconductors and Optoelectronics
Audience
Post-graduate students, researchers in the field of semiconductors and Optoelectronics and electronic devices and semiconductor manufacturers,
Contents
Contents
Preface v
CHAPTER 1
MBE GROWTH AND CHARACTERIZATION OF
LONG WAVELENGTH DILUTE NITRIDE III?V ALLOYS
1.1. Introduction
1.2. MBE Growth of Dilute
III?V Nitrides
1.3. Dilute Nitride Characterization
1.4. Energy Band and Carrier Transport Properties
1.5. Annealing and N?In Nearest Neighbor Effects
1.6. Summary
Acknowledgements
References
CHAPTER
2
EPITAXIAL GROWTH OF DILUTE NITRIDES BY METAL-ORGANIC VAPOUR PHASE EPITAXY
2.1.
Introduction
2.2. Epitaxial Growth of GaInAsN-based Structures
2.3. Long Wavelength GaAs-based Laser
Performances
2.4. Conclusion
Acknowledgements
References
CHAPTER 3
THE CHEMICAL BEAM
EPITAXY OF DILUTE NITRIDE ALLOY
SEMICONDUCTORS
3.1. Introduction to Dilute Nitride Semiconductors
3.2.
The Chemical Beam Epitaxial/Metalorganic Molecular Beam Epitaxial
(CBE/MOMBE) Growth Process
3.3. CBE of Dilute Nitride
Semiconductors
3.4. Fundamental Studies of GaNx As (12 x ) Band Structure
3.5. The Compositions and
Properties of Dilute Nitrides Grown by CBE
3.6. CBE-grown Dilute Nitride Devices
3.7. The Potential
for Production CBE of Dilute Nitrides
3.8. Conclusions
Acknowledgements
References
CHAPTER 4
MOMBE GROWTH AND CHARACTERIZATION OF III?V-N
COMPOUNDS AND APPLICATION TO InAs QUANTUM DOTS
4.1.
Introduction
4.2. MOMBE Growth and Characterization of GaAsN
4.3. Relation of In and N Incorporations
in the Growth of GaInNAs
4.4. Growth and Characterization of GaAsNSe New Alloy
4.5. Application of
GaAsN to InAs Quantum Dots
4.6. Summary
Acknowledgements
References
CHAPTER 5
RECENT
PROGRESS IN DILUTE NITRIDE QUANTUM DOTS
5.1. Self-organized Quantum Dots
5.2. Dilute
Nitride Quantum Dots
5.3. Recent Experimental Progress in GaInNAS QDS
5.4. Other Kinds of Dilute
Nitride QDs
5.5. Summary and Future Challenges in Dilute Nitride QDs
Acknowledgements
References
CHAPTER
6
PHYSICS OF ISOELECTRONIC DOPANTS IN GaAs
6.1. Nitrogen Isoelectronic Impurities
6.2. The Failure of the Virtual Crystal Approximation
6.3. Prevalent Theoretical Models on Dilute
Nitrides
6.4. Electroreflectance Study of GaAsN
6.5. Resonant Raman Scattering Study of Conduction
Band States
6.6. Compatibility with other Experimental Results
6.7. A Complementary Alloy: GaAsBi
6.8. Summary
6.9. Conclusion
References
CHAPTER 7
MEASUREMENT OF
CARRIER LOCALIZATION DEGREE, ELECTRON EFFECTIVE MASS, AND EXCITON SIZE IN In x Ga1 2 x As 1 2 y N y Alloys
7.1.
Introduction
7.2. Experimental
7.3. Single Carrier Localization in In x Ga1 2 x As 1 2 y N y
7.4.
Measurement of the Electron Effective Mass and Exciton Wave function Size
7.5. Conclusions
Acknowledgements
References
CHAPTER 8
PROBING THE ?UNUSUAL? BAND STRUCTURE OF DILUTE Ga(AsN)QUANTUM WELLS BY MAGNETO-TUNNELLING
SPECTROSCOPY AND OTHER TECHNIQUES
8.1. Introduction
8.2. Resonant Tunnelling Diodes Based
on Dilute Nitrides
8.3. Magneto-Tunnelling Spectroscopy to Probe the Conduction Band Structure of Dilute Nitrides
8.4. Electronic Properties: From the Very Dilute Regime ( , 0.1%) to the Dilute Regime
8.5. Conduction
in Dilute Nitrides and Future Prospects
8.6. Summary and Conclusions
Acknowledgements
References
CHAPTER
9
PHOTO- AND ELECTRO-REFLECTANCE OF III?V-N COMPOUNDS AND LOW DIMENSIONAL STRUCTURES
9.1.
Principles of Electromodulation in Electro- and Photo-reflectance Spectroscopy
9.2. Band Structure of (Ga,In)(As,Sb,N)
Bulk-like Layers
9.3. (Ga,In)(As,Sb,N)-Based Quantum Well Structures
9.4. The Influence of Post-grown
Annealing on GaInNAs Structures
9.5. Photoreflectance Investigation of the Exciton Binding Energy
9.6.
Manifestation of the Carrier Localization Effect in Photoreflectance Spectroscopy
References
CHAPTER 10
BAND
ANTICROSSING AND RELATED ELECTRONIC STRUCTURE IN III-N-V ALLOYS
10.1. Introduction
10.2.
Band Anticrossing Model
10.3. Experimental Evidence of Band Splitting and Anticrossing Characteristics
10.4.
Novel Electronic and Transport Properties of III-N-V Alloys
10.5. Conclusions
Acknowledgements
References
CHAPTER
11
A TIGHT-BINDING BASED ANALYSIS OF THE BAND ANTI-CROSSING MODEL AND ITS APPLICATION IN Ga(In)NAs ALLOYS
11.1. Introduction
11.2. Nitrogen Resonant States in Ordered GaNx As 1 2 x Structures
11.3.
Analytical Model for Quantum Well Confined State Energies and Dispersion
11.4. Influence of Disorder on Nitrogen Resonant
States, E 2 and E in GaNx As 1 2 x
11.5. Conduction Band Structure and Effective Mass in Disordered GaNx As 1 2 x
11.6. Alloy Scattering and Mobility in Dilute Nitride Alloys
11.7. Conclusions
Acknowledgements
References
CHAPTER 12
ELECTRONIC STRUCTURE EVOLUTION OF DILUTE
III?V NITRIDE ALLOYS
12.1.
Introduction
12.2. Phenomenology of Dilute III?V Nitrides
12.3. Empirical Pseudopotential Methodology
12.4. Electronic Structure Evolution of Dilute Nitrides
12.5. Summary of Electronic Structure Evolution
12.6. Phenomenology of Dilute Nitride Quaternaries
12.7. Future Challenges of New Nitride Materials
12.8. Conclusions
Acknowledgements
References
CHAPTER 13
THEORY OF NITROGEN?HYDROGEN
COMPLEXES IN N-CONTAINING III?V ALLOYS
13.1. Introduction
13.2. Theoretical Methods
13.3. N?H Complexes in GaAsN Alloys
13.4. Intrinsic N and H Impurities in GaP AND GaAs
13.5.
N?H Complexes in InGaAsN
13.6. N?H Complexes in GaPN
13.7. Conclusions
References
CHAPTER
14
DISLOCATION-FREE III?V-N ALLOY LAYERS ON Si SUBSTRATES AND THEIR DEVICE APPLICATIONS
14.1.
Introduction
14.2. Dislocation Generation Mechanisms in Lattice-mismatched Heteroepitaxy
14.3. Lattice-matched
Heteroepitaxy of III?V-N Alloys on III?V Compound Semiconductors
14.4. Growth of Dislocation-free III?V-N Alloy Layers
on Si Substrates
14.5. Device Applications
14.6. Summary
Acknowledgements
References
CHAPTER
15
GaNAsSb ALLOY AND ITS POTENTIAL FOR DEVICE APPLICATIONS
15.1. Introduction
15.2.
MBE of the GaNAsSb Alloy
15.3. Bands
15.4. Annealing Effect
15.5. Quinary Alloy
15.6. Long-wavelength GaAs-based Laser
15.7. HBT
15.8. Conclusions
Acknowledgements
References
CHAPTER 16
A COMPARATIVE LOOK AT 1.3 m m InGaAsN-BASED VCSELs FOR FIBER-OPTICAL COMMUNICATION
SYSTEMS
16.1. Introduction: 0.85 m m versus 1.3 m m VCSELs
16.2. Approaches to Achieve
1.3 m m VCSELs
16.3. 1.3 m m VCSELs Based on InGaAsN
16.4. Outlook
16.5. Conclusion
Acknowledgements
References
CHAPTER 17
LONG-WAVELENGTH DILUTE NITRIDE?ANTIMONIDE LASERS
17.1. Introduction
17.2. Epitaxial Growth Systems: MOVPE and MBE
17.3. Ion Damage
and Annealing Behavior
17.4. GaInNAsSb Edge-emitting Lasers
17.5. Spontaneous Emission Studies
17.6.
GaInNAsSb VCSELs
17.7. High Power Lasers Based on GaInNAs(Sb)
17.8. Relative Intensity Noise
17.9.
GaInNAsSb Electroabsorption Modulators and Saturable Absorbers
17.10. Laser Reliability
17.11. Summary
Acknowledgements
References
CHAPTER 18
APPLICATION OF DILUTE NITRIDE MATERIALS TO HETEROJUNCTION BIPOLAR
TRANSISTORS
18.1. Introduction
18.2. Design Considerations for GaInNAs-based HBTs
18.3.
Material Growth and Device Processing
18.4. GaInNAs HBT Results
18.5. Circuit Applications for GaInNAs
HBTs
18.6. Future Outlook
Acknowledgements
References
Index
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