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| SEMICONDUCTORS FOR ROOM TEMPERATURE NUCLEAR DETECTOR APPLICATIONS, 43
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Albert Beer, Consulting Physicist
Robert Willardson, Consulting Physicist, Spokane, Washington, U.S.A.
Eicke Weber, University of California, Berkeley, U.S.A.
Included in series
Semiconductors and Semimetals,
Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished
itself through the careful selection of well-known authors, editors, and contributors. The"Willardson and Beer"Series, as it is widely
known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time
of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the
University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor
materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes.
Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures,
High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and
even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors
and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device
engineersin modern industry.
Audience
Materials scientists, electrical and optical engineers, condensed-matter physicists, astronomers, defense contractors in academia, industry, and government labs and agencies.
Contents
Introduction and Overview. High Purity Germanium Detectors. Growth of Mercuric Iodide. Electrical Properties of Mercuric Iodide. Optical
Properties of Red Mercuric Iodide. Growth Methods of CdTe Nuclear Detector Materials. Characterization of CdTe Nuclear Detector Materials.
CdTe Nuclear Detectors and Applications. Cd1-xZnTe Spectrometers for Gamma- and X-ray Applications. Gallium Arsenide Radiation Detectors
and Spectrometers. Lead Iodide. Other Materials: Statusand Prospects. Characterization and Quantification of Detector Performance. Electronics
for X-Ray and Gamma-Ray Spectrometers. Summary and Remaining Issues for Room Temperature Radiation Spectrometers.T.E. Schlesinger
and R.B. James,
Introduction and Overview:
Semiconductor Nuclear Detectors. Applications. Outline of Text. L.S.
Darken and C.E. Cox,
High-Purity Germanium Detectors:
Crystal Growth. Crystal Characterization. Large Volume Detectors.
Charge Collection. Germanium X-Ray Detectors. Summary. A. Burger, D. Nason, and L.van den Berg,
Growth of Mercuric Iodide:
M. Schieber, The Crystal Structure and Phases of Mercuric Iodide. Properties Relevant to Crystal Growth.Growth of High Purity
Mercuric Iodide Crystals. Crystal Perfection. Recent Developments. Challenges in Crystal Growth. X.J. Bao, T.E. Schlesinger, and
R.B. James,
Electrical Properties of Mercuric Iodide:
Carrier Transport. Deep Levels. Photoconductivity. Surface
Effects. Detector Performance. Conclusion. X.J. Bao, R.B. James, and T.E. Schlesinger,
Optical Properties of Red Mercuric
Iodide:
Band Structure. Experimental Techniques and Measured Values for Optical Constants. Study of Processing by Photoluminescence
Spectroscopy. Conclusions. M.Hage-Ali and P. Siffert,
Growth Methods of CdTe Nuclear Detector Materials:
Phase
Diagram. Synthesis and Purification. Growth of Bulk CdTe. High Resistivity Materials.Experimental Results and Conclusion. M.Hage-Ali
and P. Siffert,
Characterization of CdTe Nuclear Detector Materials:
Impurities Analysis. Surface Analysis. Electrical
and Optical Characterization. Discussion and Conclusions. M.Hage-Ali andP.Siffert,
CdTe Nuclear Detectors and Applications:
Detection Parameter. CdTe Detectors. Improvement of Detector Quality. Applications of CdTe Detectors. R.B. James, T.E. Schlesinger,
J. Lund, and M. Schieber,
Cd1-xTe Spectrometers for Gamma- and X-Ray Applications:
Growth of Cd1-xTe
Crystals. Material Properties of Cd1-xTe. Defect Characterization. Detector Characterization. Imaging Applications. Future Work. D.S. McGregor, and J.E. Kammeraad,
Gallium Arsenide Radiation Detectors and Spectrometers:
Basic Properties
of GaAs. General Detector Operation Epitaxial GaAs Detectors. Bulk GaAs Detectors Operated in Quantum Pulse Mode. Bulk GaAs Photoconductive
Detectors Operated in Current Mode. Summary. J.C. Lund, F.Olschner, and A.Burger,
Lead Iodide:
Physical Properties.
Preparation of Lead Iodide Crystals. Radiation Detector Fabrication and Implementation. Potential Applications of Lead Iodide. Conclusion. M.R. Squillante and K.S. Shah,
Other Materials: Status and Prospects:
Detector Materials. V Materials. VI Semiconductors.
Current Status and Prospects. V.M. Gerrish,
Characterization and Quantification of Detector Performance:
X-Ray
and Gamma-Ray Spectroscopy. Electronic Characterization. Correlation of Material Properties with Detector Performance. Concluding Remarks. J.S. Iwanczyk and B.E. Patt,
Electronics for X-Ray and Gamma-Ray Spectrometers:
Electronic Noise Limited Systems.
Statistical Noise LimitedSystems. Trapping Noise Limited Systems. Miniaturized Electronics and Multi-Element Systems. M. Schieber,
R.B. James, and T. E.Schlesinger,
Summary and Remaining Issues for Room Temperature Radiation Spectrometers:
Materials
Requirements. Issues in HgI2 Detector Technology. Materials Issues in CdTe and CdZnTe. Unresolved Problems and Conclusions.
References. Index.
| Bibliographic details |
Hardbound, 606 pages, publication date: AUG-1995
ISBN-13: 978-0-12-752143-5
ISBN-10: 0-12-752143-7
Imprint: ACADEMIC PRESS
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