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| III-NITRIDE SEMICONDUCTORS: ELECTRICAL, STRUCTURAL AND DEFECTS PROPERTIES
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Edited By
M.O. Manasreh
Description
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic
and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first
semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters
written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations,
impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress,
structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural
properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given
the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is
particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting
diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors
was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the
development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed
by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained
in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently
being pursued in academic, government, and industrial laboratories worldwide.
Contents
Introduction to defects and structural properties of III-nitride semiconductors (M.O. Manasreh). Dopants in GaN (J.T. Torvik). Defect
engineering in III-nitrides epitaxial systems (S. Ruvimov). Magnetic resonance studies of defects in GaN and related compounds (M. Palczewska,
M. Kaminska). Characterization of native point defects in GaN by positron annihilation spectroscopy (K. Saarinen). Persistent photoconductivity
in III-nitrides (H.X. Jiang, J.Y. Lin). Ion implantation, isolation and thermal processing of GaN and related materials (B. Rauschenbach).
Radiation and processed induced defects in GaN (F.D. Auret, S.A. Goodman). Residual stress in III-V nitrides (N.V. Edwards). Structural
defects in nitride heteroepitaxy (M.E. Twigg, D.D. Koleske, A.E. Wickenden, et al.). Optical phonon confinement in nitride-based
heterostructures (N.A. Zakhleniuk, C.R. Bennet, M. Babiker, B.K. Ridley).
| Bibliographic details |
Hardbound, 464 pages, publication date: DEC-2000
ISBN-13: 978-0-444-50630-6
ISBN-10: 0-444-50630-6
Imprint: ELSEVIER
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| Price and Ordering |
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GBP 127
EUR 149.95
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Last update: 4 Sep 2009
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