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| CHEMICAL VAPOR DEPOSITION OF TUNGSTEN AND TUNGSTEN SILICIDES FOR VLSI/ ULSI APPLICATIONS
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By
John E.J. Schmitz, Philips Semiconductor; former COO of SEMATECH
Description
This monograph condenses the relevant and pertinent literature on blanket and selective CVD of tungsten (W) into a single manageable volume.
The book supplies the reader with the necessary background to bring up, fine tune, and successfully maintain a CVD-W process in a production
set-up. Materials deposition chemistry, equipment, process technology, developments, and applications are described.
Audience
Engineers and technologists in the semiconductor, optoelectronic, optics, cutting tool, refractory fibers, filter and other industries.
Contents
1. Introduction
1.1 Scaling down
1.2 Electrical contacts
1.3 Device reliability
1.4 Contact planarization and design rules
2.
The Blanket Tungsten Approach
2.1 Principal steps
2.2 Tungsten adhesion
2.3 Blanket deposition of tungsten
2.4 Etch back of blanket
tungsten
2.5 Degree of planarization and the contact diameter
2.6 Blanket tungsten material characterization
3. The Selective Tungsten
Approach
3.1 Principal steps
3.2 Types of substrates
3.3 Types of dielectric layers
3.4 Chemistry of selective tungsten
3.5
Mechanisms of selectivity loss
3.6 Electrical characterization
4. Blanket Versus Selective Tungsten
4.1 Feasibility of selective
and blanket contact or via fill
4.2 Costs of the contact/via fill process
4.3 World wide status of CVD of tungsten
4.4 Conclusion
5. Tungsten as Interconnect Material
5.1 Weaknesses of aluminum internconnects
5.2 Tungsten interconnects
5.3 Issues of tungsten
interconnects
6. The Chemistry of CVD-W and Properties of Tungsten
6.1 CVD tungsten source material
6.2 Experimental deposition rate
relations obtained for the H2/WF6 chemistry
6.3 Some properties of tungsten
6.4 Contamination issues in CVD-W
7. The Deposition Equipment
7.1 Hot wall reactors
7.2 Cold wall reactors
7.3 Industrial reactors
7.4 Future reactor developments
8. Miscellaneous
8.1 Tungsten
gates
8.2 Selective growth on implanted oxide
8.3 Buried tungsten
8.4 Alternative deposition techniques
8.5 Alternative plug
processes
9. Chemical Vapor Deposition of Tungsten Silicide
9.1 Introduction
9.2 WSix for polycide applications
9.3 Silicide deposition
methods
9.4 CVD of WSix
9.5 CVD-WSix based on SiH4/WF6 chemistry
9.6 WSix based on SiH2Cl2/WF6 chemistry
9.7 Fluorine content
in CVD-WSix films
9.8 Stress in CVD-WSix films
9.9 Step coverage of CVD-WSix films
9.10 Conclusions
References
Author Index
Subject
Index
Appendix: Unit Cells of W and WSi2
| Bibliographic details |
Hardbound, 251 pages, publication date: DEC-1992
ISBN-13: 978-0-8155-1288-2
ISBN-10: 0-8155-1288-0
Imprint: WILLIAM ANDREW
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| Price and Ordering |
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USD 133
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Last update: 5 Sep 2009
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