Nobel Prize in Physics 2014

The publishing team of Elsevier Physics congratulates Isamu Akasaki, Hiroshi Amano and Shuji Nakamura, for jointly receiving the 2014 Nobel Prize in Physics "for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources".

We feel honored to have had the opportunity to work with these remarkable scientists, by either publishing their ground-breaking work in our journals or in their role as editorial board members. In recognition of the importance of these three scientists, we are pleased to make a collection of their work, published with Elsevier Physics, freely available.

Journal of Crystal Growth

Journal of Crystal Growth

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
Isamu Akasaki, Hiroshi Amano, Yasuo Koide, Kazumasa Hiramatsu, Nobuhiko Sawaki
Journal of Crystal Growth, Volume 98, Issues 1–2, 1 November 1989, Pages 209–219

Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
K. Hiramatsu, S. Itoh, H. Amano, I. Akasaki, N. Kuwano, T. Shiraishi, K. Oki
Journal of Crystal Growth, Volume 115, Issues 1–4, 2 December 1991, Pages 628-633

Growth of GaN and AlGaN for UV/blue p-n junction diodes
I. Akasaki, H. Amano, H. Murakami, M. Sassa, H. Kato, K. Manabe
Journal of Crystal Growth, Volume 128, Issues 1–4, 1 March 1993, Pages 379-383

High-power UV InGaN/AlGaN double-heterostructure LEDs
Takashi Mukai, Daisuke Morita, Shuji Nakamura
Journal of Crystal Growth, Volumes 189–190 , 15 June 1998, Pages 778–781

First III–V-nitride-based violet laser diodes
Shuji Nakamura
Journal of Crystal Growth, Volume 170, Issues 1–4 , 1 January 1997, Pages 11–15

Journal of Crystal Growth

Journal of Luminescence

Photoluminescence and optical gain in highly excited GaN
L. Eckey, J. Holst, A. Hoffman, I. Broser, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu
Journal of Luminescence, Volumes 72–74, June 1997, Pages 59–61

Electron beam effects on blue luminescence of zinc-doped GaN
Hiroshi Amano, Isamu Akasaki, Takahiro Kozawa, Kazumasa Hiramatsu, Nobuhiko Sawaki, Kousuke Ikeda, Yoshikazu Ishii
Journal of Luminescence, Volumes 40–41, February 1988, Pages 121-122

Ultraviolet emission properties in InxGa1−xN epitaxial layer revealed by magnetoluminescence and time-resolved luminescence studies
Hiromitsu Kudo, Hiroki Ishibashi, Ruisheng Zheng, Yoichi Yamada, Tsunemasa Taguchi, Shuji Nakamura, Genichi Shinomiya
Journal of Luminescence, Volumes 87–89, May 2000, Pages 1199–1201

Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution
T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, Sg. Fujita, S. Nakamura
Journal of Luminescence, Volumes 87–89, May 2000, Pages 1196–1198

Highly excited luminescence in InGaN epitaxial films: Origins of the blue-green emission
Sasaki F., Kobayashi S., Tani T., Yamada Y., Taguchi T., Nakamura S., Shinomiya G.
Journal of Luminescence, Volume 76-77, February 1998, Pages 242-245

InGaN quantum-well structure blue LEDs and LDs
Shuji Nakamura
Journal of Luminescence, Volume 72-74, June 1997, Pages 55-58

Journal of Crystal Growth

Materials Science & Engineering B

In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology
Shugo Nitta, Yohei Yukawa, Yasuhiro Watanabe, Masayoshi Kosaki, Motoaki Iwaya, Shigeo Yamaguchi, Hiroshi Amano, Isamu Akasaki
Materials Science and Engineering: B, Volume 93, Issues 1–3, 30 May 2002, Pages 139–142

Low-dislocation-density AlxGa1−xN single crystals grown on grooved substrates
Shigekazu Sanoa, Theeradetch Detchprohmc, Masahiro Yanob, Ryo Nakamurab, Shingo Mochizukib, Hiroshi Amano, Isamu Akasaki
Materials Science and Engineering: B, Volume 93, Issues 1–3, 30 May 2002, Pages 197–201

Optical characterization of III-nitrides
B Monemar, P.P Paskov, T Paskova, J.P Bergman, G Pozina, W.M Chen, P.N Hai, I.A Buyanova, H Amano, I Akasaki
Materials Science and Engineering: B, Volume 93, Issues 1–3, 30 May 2002, Pages 112–122

Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant
G Pozina, J.P Bergman, B Monemar, S Yamaguchi, H Amano, I Akasaki
Materials Science and Engineering: B, Volume 82, Issues 1–3, 22 May 2001, Pages 137–139

Photoluminescence of exciton-polaritons in GaN
Buyanova, I.A., Bergman, J.P., Monemar, B., Amano, H., Akasaki, I.
Materials Science and Engineering B, Volume 50, Issue 1-3, 18 December 1997, Pages 130-133

Electronic structure and temperature dependence of excitons in GaN
Monemar, B., Buyanova, I.A., Bergman, J.P., Amano, H., Akasaki, I.
Materials Science and Engineering B, 43 (1-3), March 1997, Pages 172-175

Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3
Merz, C., Kunzer, M., Šantić, B., Kaufmann, U., Akasaki, I., Amano, H.
Materials Science and Engineering B, 43 (1-3), March 1997, Pages 
176-180

Electron gas in modulation doped GaN/AlGaN structures
Bergman, J.P., Buyanov, A., Lundström, T., Monemar, B., Amano, H., Akasaki, I.
Materials Science and Engineering B, 43 (1-3), March 1997, Pages  207-210. 

Polarization of light from an optically pumped (AlGaN)/(GaInN) double heterostructure
Kim, S.T., Tanaka, T., Amano, H., Akasaki, I.
Materials Science and Engineering B, 26 (2-3), March 1994, Pages L5-L7.

Journal of Crystal Growth

Optical Materials

Critical issues in AlxGa1−xN growth
Hiroshi Amano, Isamu Akasaki
Optical Materials, Volume 19, Issue 1, February–March 2002, Pages 219-222

 

 

Journal of Crystal Growth

Physica B: Condensed Matter

Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates
G. Pozina, B. Monemar, P.P. Paskov, C. Hemmingsson, L. Hultman, H. Amano, I. Akasaki, T. Paskova, S. Figge, D. Hommel, A. Usui
Physica B: Condensed Matter, Volumes 401–402, 15 December 2007, Pages 302-306

DX-like behavior of oxygen in GaN
Christian Wetzel, Hiroshi Amano, Isamu Akasaki, Joel W Ager III, Izabella Grzegory, Bruno K Meyer
Physica B: Condensed Matter, Volumes 302–303, 2001, Pages 23-38

Correlation of vibrational modes and DX-like centers in GaN:O
C Wetzel, J.W.Ager IIIb, M Topf, B.K Meyer, H Amano, I Akasaki
Physica B: Condensed Matter, Volumes 273–274, 15 December 1999, Pages 109–112

Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate
M. Imura, A. Honshio, Y. Miyake, K. Nakano, N. Tsuchiya, M. Tsuda, b, Y. Okadome, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
Physica B: Condensed Matter, Volumes 376–377, 1 April 2006, Pages 491–495

Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration
Detlev M Hofmann,Wolfgang Burkhardt, Frank Leiter, Walter von Förster, Helder Alves, Albrecht Hofstaetter, Bruno K Meyer, Nikolai G Romanov, Hiroshi Amano, Isamu Akasaki
Physica B: Condensed Matter, Volumes 273–274, 15 December 1999, Pages 43–45

Journal of Crystal Growth

Superlattices and Microstructures

Free-to-bound radiative recombination in highly conducting InN epitaxial layers
B. Arnaudov, T. Paskova, P.P. Paskov, B. Magnusson, E. Valcheva, B. Monemar, H. Luc, W.J. Schaff, H. Amano, I. Akasaki
Superlattices and Microstructures, Volume 36, Issues 4–6, October–December 2004, Pages 563–571

 

 

Journal of Crystal Growth

Thin Solid Films

Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure
M. Iwaya, H. Kasugai, T. Kawashima, K. Iida, A. Honshio, Y. Miyake, S. Kamiyama, H. Amano, I. Akasaki
Thin Solid Films, Volume 515, Issue 2, 25 October 2006, Pages 768-770

Blue light emitting laser diodes
Shuji Nakamura
Thin Solid Films, Volumes 343–344, April 1999, Pages 345–349

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
Hiroshi Amano, Isamu Akasaki, Kazumasa Hiramatsu, Norikatsu Koide, Nobuhiko Sawaki
Thin Solid Films, Volume 163, September 1988, Pages 415-420

White light-emitting diode based on fluorescent SiC
Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Rositza Yakimova, Mikael Syväjärvi
Thin Solid Films, Volume 522, 1 November 2012, Pages 23-25