Materials Science in Semiconductor Processing

Functional Materials for (Opto)electronics, Sensors, Detectors, Biotechnology, and Green Energy.

Materials Science in Semiconductor Processing - ISSN 1369-8001
Source Normalized Impact per Paper (SNIP): 1.009 Source Normalized Impact per Paper (SNIP):
SNIP measures contextual citation impact by weighting citations based on the total number of citations in a subject field.
SCImago Journal Rank (SJR): 0.645 SCImago Journal Rank (SJR):
SJR is a prestige metric based on the idea that not all citations are the same. SJR uses a similar algorithm as the Google page rank; it provides a quantitative and a qualitative measure of the journal’s impact.
Impact Factor: 2.359 (2016) Impact Factor:
The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years.
© 2017 Journal Citation Reports ® (Clarivate Analytics, 2017)
5 Year Impact Factor: 2.305 (2016) Five-Year Impact Factor:
To calculate the five year Impact Factor, citations are counted in 2016 to the previous five years and divided by the source items published in the previous five years.
© 2017 Journal Citation Reports ® (Clarivate Analytics, 2017)
Volumes: Volumes 73-88
Issues: 16 issues
ISSN: 13698001

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Description

Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.



Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.



Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.