Journal of Crystal Growth

Journal of Crystal Growth - ISSN 0022-0248
Source Normalized Impact per Paper (SNIP): 0.984 Source Normalized Impact per Paper (SNIP):
SNIP measures contextual citation impact by weighting citations based on the total number of citations in a subject field.
SCImago Journal Rank (SJR): 0.541 SCImago Journal Rank (SJR):
SJR is a prestige metric based on the idea that not all citations are the same. SJR uses a similar algorithm as the Google page rank; it provides a quantitative and a qualitative measure of the journal’s impact.
Impact Factor: 1.632 (2019) Impact Factor:
The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years.
© 2017 Journal Citation Reports ® (Clarivate Analytics, 2017)
5 Year Impact Factor: 1.684 (2019) Five-Year Impact Factor:
To calculate the five year Impact Factor, citations are counted in 2016 to the previous five years and divided by the source items published in the previous five years.
© 2017 Journal Citation Reports ® (Clarivate Analytics, 2017)
Volumes: Volumes 553-576
Issues: 1 issue
ISSN: 00220248
Editor-in-Chief: Derby

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Description

The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.

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