Part 1: Fundamentals and Materials
2. Interconnect Technologies
Part 2: Components
4. Passive Components
Part 3: Performance Measurement and Reliability Evaluation
6. Cooling System: AI and Cu Cooling systems
7. Electric Performance Evaluation
8. Reliability Evaluation
9. CAE Simulation
Part 4: Future Prospects
10. Future Solutions
Wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features such as high breakdown voltage, high frequency capability and high heat-resistance beyond 200 C. These features provide us great energy loss reduction in electric conversion, module size reduction, and many other benefits. However, there are barriers to the realization of WBG power semiconductors in the marketplace; the biggest being integration.
The ideal performance from the SiC or GaN on Si cannot be achieved due to the current processes for system integration and packaging materials. Conventional materials and technologies cannot survive the increasing energy density which raises temperature beyond 200 C.
Wide bandgap Power Semiconductor Packaging addresses the key challenges that WBG power semiconductors face for integration including:
1) Thermal management such as heat resistance, heat dissipation and thermal stress
2) Noise reduction at high frequency and discrete components
3) Challenges in interfacing, metallization, plating, bonding, and wiring
Experts present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration.
- Examines the key challenges of wide bandgap power semiconductor packaging at the various levels of materials, components, and device performance
- Provides latest research on potential solutions with an eye towards the end goal of system integration
- Discusses key problems such as thermal management, noise reduction, challenges in interconnects and substrates
Materials science grad students, researchers and engineers, electronic grad students, researchers and engineers
- No. of pages:
- © Woodhead Publishing 2018
- 1st June 2018
- Woodhead Publishing
- Paperback ISBN:
Dr. Katsuaki Suganama graduated from Tohoku University Faculty of Engineering in 1977, and since then has had a highly influential role within the fields of Physical properties of metals/Metal-base materials, Inorganic industrial materials, Metal making/Resorce production engineering, Material processing/Microstructural control engineering, Structural/Functional materials, Composite materials/Surface and interface engineering, Inorganic materials/Physical properties, Electronic materials/Electric materials. He has published several academic papers and books during his career, and has won many prestigious awards such as Best Paper of Symposium/Best Paper of Session in the 33rd International Symposium on Microelectronics and the The Richard M. Fularth Pacific Award. He has worked as Professor at Osaka University Institute of Scientific and Industrial Research since 1996.
The Institute of Scientific and Industrial Research, Osaka University, Japan