Vapour Growth and Epitaxy

Proceedings of the Third International Conference on Vapour Growth and Epitaxy, Amsterdam, The Netherlands, 18–21 August 1975

1st Edition - January 1, 1975
Editors: G.W. Cullen, E. Kaldis, R.L. Parker
Language: English
eBook ISBN:
9 7 8 - 1 - 4 8 3 2 - 2 3 5 7 - 5

Vapor Growth and Epitaxy covers the proceedings of the Third International Conference on Vapor Growth and Epitaxy, held in Amsterdam, The Netherlands on August 18-21, 1975. This… Read more

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Vapor Growth and Epitaxy covers the proceedings of the Third International Conference on Vapor Growth and Epitaxy, held in Amsterdam, The Netherlands on August 18-21, 1975. This conference highlights the crystal growth aspects of the preparation, characterization, and perfection of thin films of electronic interest. This book is organized into two sections encompassing 54 chapters. The first section considers the fundamental and applied crystal growth studies of silicon, III-V and II-VI compounds, and magnetic garnets. This section also describes the structure of autoepitaxial diamond films and the morphology of single crystals grown from the vapor phase. The second section deals with nucleation and crystal growth kinetic studies of whiskers and the fabrication of solar cells. This section further surveys the equilibrium, kinetics, and epitaxy in the chemical vapor deposition of silicon compounds.

Preface

Section I. Growth of Single Crystals from the Vapor Phase

Crystal Growth from the Vapor Phase: Confrontation of Theory with Experiment

Fundamental Aspects of VLS Growth

Complexes in the Vapor Phase and their Implications for Vapor Growth

Crystal Growth and Transport Rates of GeSe and GeTe in Microgravity Environment

Structure of Autoepitaxial Diamond Films

Darstellung von VO2-Einkristallen der oberen und unteren Phasengrenze durch chemischen Transport

The Morphology of Zn3P2 Single Crystals Grown from the Vapor Phase

Morphology of Chemical Vapor Deposited Titanium Diboride

A Model for the Growth of Anomalous Polytype Structures in Vapor Grown SiC

Epitaxial Growth of Î±-SiC Layers by Chemical Vapor Deposition Technique

Section II. Nucleation and Kinetics

Homogeneous Nucleation in a Free Argon Jet; Observation of Clusters by Electron Diffraction

Thermodynamics and Kinetics of the First Monolayer Adsorption of Xenon on the (0001) Graphite Face

Modifications of Epitaxy in Evaporated Films by Electric Charge Effects

Decomposition of Methane on a Hot Carbon Surface After Multiple Collisions

Section III. Epitaxy

III.A. General

Formation and Properties of Transition Layers in Epitaxial Films

Epitaxy in Solar Cells

III.B. III-V Compounds

III.B.1. MBE and VPE

III.B.2. LPE

III.B.3. Characterization

III.C. Silicon

Equilibrium and Kinetics in the Chemical Vapor Deposition of Silicon

Inelastic Light Scattering Studies of Silicon Chemical Vapor Deposition (CVD) Systems

The Effect of Rapid Early Growth on the Physical and Electrical Properties of Heteroepitaxial Silicon

The Chemistry and Transport Phenomena of Chemical Vapor Deposition of Silicon from SiCl4

Anisotropy in the Growth Rates of Silicon Deposited by Reduction of Silicon Tetrachloride

Growth and Etching of Silicon in Chemical Vapor Deposition Systems; the Influence of Thermal Diffusion and Temperature Gradient

Control of Slip in Horizontal Silicon Epitaxy with Profiled Susceptors

Selective Etching and Epitaxial Refilling of Silicon Wells in the System SiH4/HCl/H2

The Incorporation of Phosphorus in Silicon; the Temperature Dependence of the Segregation Coefficient

III.D. II-VI compounds

Vapor Phase Epitaxy of II-VI Compounds: a Review

Synthesis and Epitaxial Growth of CdTe Films by Neutral and Ionized Beams

The Epitaxial Growth of Thick Smooth Films of ZnS on GaAs

III.E. Metals and Compounds on Metals

Growth Mechanism and Structure of Absorbed Layers on Metals

Epitaxial Growth in the (11 l)Ag/Cu and (11 l)Au/Cu Systems

III.F. Garnets

III.F.1. Growth

III.F.2. Characterization

Author index

Subject index