Topics in Millimeter Wave Technology
Volume 2
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Topics in Millimeter Wave Technology is a compendium of papers dealing with plasma waves, TUNNETT diodes, and solid-state devices. One paper describes the application of the TUNNET diode, a semiconductor with a coherent signal source of over 100 GHz to 1000 GHz. The paper notes the possibility of achieving more than 1000 GHz through sophisticated device fabrication technology. Another paper discusses the use of computer-aided testing of superconductor-insulator-superconductor (SIS) junction whose mixing properties are effected by the ski-sloped shape of the current-voltage curve. Such testing methods are useful at fixed or variable temperatures from 15 K to 300 K. One paper reviews the collective Thomson scattering theory, including the application of the multichannel far-infrared scattering system in the basic tokamak plasma physics. Another paper discusses the static induction transistor for very high frequency operation as the millimeter to submillimeter wave region is the ideal static induction transistor in ballistic devices. This review material can be helpful for nuclear scientists, nuclear engineers, students of physics, and researchers involved in plasma physics and semiconductor technology.
Table of Contents
List of Contributions
Chapter 1 The CW GaAs Tunnett Diodes
I. Introduction
II. Theory of TUNNETT Diode
III. Preparation of the GaAs Hyperabrupt p+-n+-i(v)-n+ Diode
IV. Experimental Results
V. Features of the GaAs Hyperabrupt p+-n+-i-n+ TUNNETT Diodes
VI. Future of the TUNNETT Diode
VII. Conclusion
References
Chapter 2 Computer-Aided Testing of SIS Junctions and Solid-State Devices
I. Introduction
II. Nonlinearities in SIS Junctions, Schottky Diodes and FETs
III. Description of Test System
IV. Software
V. Measurements
VI. Conclusions
References
Appendix A
Appendix B
Appendix C
Appendix D
Chapter 3 Multichannel Far-Infrared Collective Scattering System for Plasma Wave Studies
I. Introduction
II. Review of Collective Thomson Scattering Theory
III. Far-Infrared Probe Source
IV. Optical Scattering System
V. Mixers, Amplifiers, and Data Acquisition
VI. Calibration of Optical System
VII. Typical Scattering Data
VIII. Other Applications
IX. Acknowledgments
X. References
Chapter 4 Special Imperfections in Semiconductors
I. Introduction
II. Electron Scattering by Dislocations
III. Natural Quantum Wells in ZnSe
IV. Deep Level Defects in Semi-Insulating GaAs
V. Concluding Remarks
Acknowledgments
References
Chapter 5 SIT as a Ballistic Device
I. Introduction
II. SIT
III. Ideal SIT
IV. Ideal SITT
V. Conclusion
References
Index
Product details
- No. of pages: 264
- Language: English
- Copyright: © Academic Press 1988
- Published: January 28, 1988
- Imprint: Academic Press
- eBook ISBN: 9781483257457
About the Editor
Kenneth J Button
Affiliations and Expertise
George Mason University, Fairfax, Virginia, USA
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