Thermal Management of Gallium Nitride Electronics
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Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs.
Key Features
- Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods
- Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies
- Touches on emerging, real-world applications for thermal management strategies in power electronics
Readership
Materials Scientists and Engineers; Mechanical Engineers; Electrical Engineers
Table of Contents
- Cover
- Title page
- Table of Contents
- Copyright
- Contributors
- Foreword
- Preface
- 1: Heating issues in wide-bandgap semiconductor devices
- Abstract
- Acknowledgments
- 1.1: Heat generation during device operation
- 1.2: The impact of heat on device characteristics and operation
- 1.3: Management of heating issues in wide-bandgap semiconductor devices
- 1.4: Summary
- References
- 2: First principles thermal transport modeling in GaN and related materials
- Abstract
- Acknowledgments
- 2.1: Introduction
- 2.2: Mechanics of modeling
- 2.3: Application to gallium nitride and related materials
- 2.4: Summary
- References
- 3: Heat transport in polycrystalline diamond from the meso to the nano scale
- Abstract
- Acknowledgments
- 3.1: Introduction
- 3.2: Heat conduction at the mesoscale: Ensemble averaged properties
- 3.3: Phonon transport at the nanoscale: Suppression of thermal conductivity near grain boundaries
- 3.4: Conclusions and outlook
- References
- 4: Fundamental understanding of thermal transport across solid interfaces
- Abstract
- Acknowledgments
- 4.1: Introduction
- 4.2: Thermal transport across harmonic-matched interfaces
- 4.3: Inelastic contribution to TBC
- 4.4: Effects of interfacial bonding to TBC
- 4.5: Comparison of TBC modeling methods
- References
- 5: Upper limits to thermal conductance across gallium nitride interfaces: Predictions and measurements
- Abstract
- Acknowledgments
- 5.1: Introduction
- 5.2: Theoretical upper limits to thermal boundary conductance across GaN interfaces
- 5.3: Experimentally measured high thermal boundary conductance across ZnO/GaN interfaces
- 5.4: Steady state thermoreflectance (SSTR) as a novel metrology to measure the thermal conductivity of thin films and interfaces: Example for GaN
- References
- 6: AlGaN/GaN HEMT device physics and electrothermal modeling
- Abstract
- 6.1: Introduction
- 6.2: AlGaN/GaN HEMT
- 6.3: 2D TCAD model
- 6.4: 3D FEA thermal model
- 6.5: Summary
- Appendix
- References
- 7: Modeling of thermal phenomena in GaN devices
- Abstract
- Acknowledgment
- 7.1: Introduction
- 7.2: Linear thermoelectroelasticity
- 7.3: Thermal simulation of III-N HEMTs in 2D
- 7.4: 2D versus 3D thermal simulations of GaN HEMTs
- 7.5: Improved heat sinking using CVD diamond
- 7.6: Electrothermomechanical simulations of GaN HEMTs
- 7.7: Final remarks
- References
- 8: Device-level modeling and simulation of AlGaN/GaN HEMTs
- Abstract
- 8.1: Introduction
- 8.2: Section 1: New or accentuated physics
- 8.3: Section 2: Modeling ramifications of aging
- 8.4: Section 3: Other important considerations
- 8.5: Section 4: Miscellaneous simulation tips and tricks
- 8.6: Conclusion
- References
- 9: Gate resistance thermometry: An electrical thermal characterization technique
- Abstract
- 9.1: Introduction
- 9.2: Steady-state analysis
- 9.3: Transient analysis
- 9.4: Under RF operation
- 9.5: Conclusions
- References
- 10: Thermal characteristics of superlattice castellated FETs
- Abstract
- 10.1: Superlattice castellated field effect transistor
- 10.2: Thermal transport in SLCFETs
- 10.3: Reducing peak temperature in SLCFETs
- 10.4: Conclusion
- References
- 11: The transient thermoreflectance approach for high-resolution temperature mapping of GaN devices
- Abstract
- Acknowledgments
- 11.1: Introduction
- 11.2: The methods and the physics behind them
- 11.3: Results
- 11.4: Closing observations
- References
- 12: Fundamentals of CTE-matched QST® substrate technology
- Abstract
- Acknowledgments
- 12.1: Introduction
- 12.2: QST structure
- 12.3: QST thermal conductivity and the thermal resistance of the QST stack
- 12.4: GaN epitaxy on QST
- 12.5: Power devices
- 12.6: RF devices
- References
- 13: Reduced-stress nanocrystalline diamond films for heat spreading in electronic devices
- Abstract
- Acknowledgments
- 13.1: Introduction
- 13.2: Nanocrystalline diamond chemical vapor deposition
- 13.3: Optimization of stress in nanocrystalline diamond thin films
- 13.4: Discussion and summary
- References
- 14: GaN-on-diamond materials and device technology: A review
- Abstract
- 14.1: Introduction
- 14.2: Why GaN-on-diamond?
- 14.3: Methods for making GaN-on-diamond
- 14.4: Manufacturability
- 14.5: Thermal and stress characterization
- 14.6: Electrical and mechanical characterization
- 14.7: Conclusion
- References
- 15: Three-dimensional integration of diamond and GaN
- Abstract
- Acknowledgments
- 15.1: Introduction
- 15.2: Self-heating in AlGaN-based HEMTs and thermal limitations
- 15.3: Challenges in growing III-nitrides on polycrystalline CVD diamond
- 15.4: Challenges of direct growth of diamond on GaN
- 15.5: Direct GaN–diamond integration
- 15.6: Summary
- References
- 16: Room-temperature bonded thermally conductive semiconductor interfaces
- Abstract
- Acknowledgments
- 16.1: Introduction
- 16.2: Thermal measurement techniques
- 16.3: Thermal conductivity of bulk GaN and thin films
- 16.4: A summary of TBC of GaN–SiC and GaN–diamond interfaces
- 16.5: Surface-activated bonding technique
- 16.6: Thermal conductance of bonded interfaces
- References
- 17: Direct low-temperature bonding of AlGaN/GaN thin film devices onto diamond substrates
- Abstract
- 17.1: Introduction
- 17.2: GaN-on-diamond technologies
- 17.3: Low-temperature bonding by hydrolysis-assisted solidification
- 17.4: Thermal resistance of the bonding layer
- 17.5: 3 GHz RF-performance of GaN transistors on diamond
- 17.6: Summary
- References
- 18: Microfluidic cooling for GaN electronic devices
- Abstract
- 18.1: Introduction
- 18.2: Fundamentals of microfluidic cooling
- 18.3: Levels of integration in microfluidic cooling
- 18.4: Conclusions
- References
- 19: Thermal effects in Ga2O3 rectifiers and MOSFETs borrowing from GaN
- Abstract
- Acknowledgments
- 19.1: Introduction
- 19.2: Review of current state-of-the art in thermal studies in Ga2O3
- 19.3: Vertical geometry rectifiers
- 19.4: Thermal management approaches for MOSFETs
- 19.5: Future prospects for Ga2O3 device cooling
- References
- Index
Product details
- No. of pages: 560
- Language: English
- Copyright: © Woodhead Publishing 2022
- Published: July 13, 2022
- Imprint: Woodhead Publishing
- eBook ISBN: 9780128211052
- Paperback ISBN: 9780128210840
About the Editors
Marko Tadjer
Dr. Marko J. Tadjer is a civilian staff scientist at the U.S. Naval Research Laboratory, Washington DC. He received a Ph.D. in Electrical Engineering from the University of Maryland, College Park in 2010, a Master of Science in Electrical Engineering from Duke University in 2004, and undergraduate degrees in Electrical and Computer Engineering from the University of Arkansas in 2002. His research in power devices focuses on the integration of materials with attractive properties such as diamond with more mature GaN and SiC technology, as well as exploring novel oxides such as Ga2O3 for power electronics applications.
Affiliations and Expertise
Electronics Engineer, Naval Research Laboratory, Washington DC, USA
Travis Anderson
Travis J. Anderson is a civilian staff scientist at the U.S. Naval Research Laboratory. He received a Ph.D. in Chemical Engineering from the University of Florida in 2008, and a B.S. in Chemical Engineering from the Georgia Institute of Technology in 2004.
Affiliations and Expertise
Senior Chemical Engineer, Naval Research Laboratory, Washington DC, USA
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