Selected papers: Preface. Growth mechanism of microcrystalline silicon obtained from reactive plasmas (A. Matsuda). Properties of polycrystalline silicon films prepared from fluorinated precursors (S. Ray et al.). Microcrystalline silicon growth on a-Si:H: effects of hydrogen (P. Roca i Cabarrocas, S. Hamma). Carrier transport, structure and orientation in polycrystalline silicon on glass (K. Nakahata et al.). Solid-phase crystallization of amorphous SiGe films deposited by LPCVD on SiO2 and glass (J. Olivares et al.). Stability of the dielectric properties of PECVD deposited carbon-doped SiOF films (J. Lubguban et al.). High rate deposition of ta-C:H using an electron cyclotron wave resonance plasma source (N.A. Morrison et al.). Shape of grain size distributions during crystal grain nucleation in a-Si (C. Spinella et al.). Advanced excimer-laser annealing process for quasi single-crystal silicon thin-film devices (M. Matsumura, C-H. Oh). Lateral growth control in excimer laser crystallized polysilicon (L. Mariucci et al.). Sensor properties of Pt doped SnO2 thin films for detecting CO (A.V. Tadeev et al.). Self-assembly of ultrathin composite TiO2/polymer films (N. Kovtyukhova et al.). Laser crystallised poly-Si TFTs for AMLCDs (S.D. Brotherton et al.). Temperature analysis of polysilicon thin-film transistors made by excimer laser crystallization (V. Foglietti et al.). Ion implantation of microcrystalline silicon for low process temperature top gate thin film transistors (V. Chu et al.). Large area X-ray detectors based on amorphous silicon technology (J-P. Moy). Al-based sputter-deposited films for large liquid-crystal-display (H. Takatsuji et al.). Influence of surface morphology of the polycrystalline silicon on field electron emission (A.A. Evtukh).