Switchmode RF Power Amplifiers

1st Edition

Authors: Andrei Grebennikov Nathan Sokal Marc Franco
Hardcover ISBN: 9780750679626
eBook ISBN: 9780080550640
Imprint: Newnes
Published Date: 28th June 2007
Page Count: 448
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Description

A majority of people now have a digital mobile device whether it be a cell phone, laptop, or blackberry. Now that we have the mobility we want it to be more versatile and dependable; RF power amplifiers accomplish just that. These amplifiers take a small input and make it stronger and larger creating a wider area of use with a more robust signal.

Switching mode RF amplifiers have been theoretically possible for decades, but were largely impractical because they distort analog signals until they are unrecognizable. However, distortion is not an issue with digital signals—like those used by WLANs and digital cell phones—and switching mode RF amplifiers have become a hot area of RF/wireless design. This book explores both the theory behind switching mode RF amplifiers and design techniques for them.

Key Features

Provides essential design and implementation techniques for use in cma2000, WiMAX, and other digital mobile standards Both authors have written several articles on the topic and are well known in the industry *Includes specific design equations to greatly simplify the design of switchmode amplifiers

Readership

RF/wireless engineers and designers; engineering managers

Table of Contents

Preface
1. Power Amplifier Design Principles
1.1. Spectral and time domain analyses
1.2. Basic classes of operation: A, AB, B, C
1.3. High frequency conduction angle
1.4. Active device models
1.5. Push-pull power amplifiers
1.6. Gain and stability
1.7. Effect of collector capacitance
1.8. Parametric oscillations
References
2. Class D power amplifiers
2.1. Switched-mode power amplifiers with resistive load
2.2. Complementary voltage-switching configuration
2.3. Transformer-coupled voltage-switching configuration
2.4. Symmetrical current-switching configuration
2.5. Transformer-coupled current-switching configuration
2.6. Voltage-switching configuration with reactive load
2.6. Drive and transition time
2.8. Practical Class D power amplifier implementation
References
3. Class F power amplifiers
3.1. Biharmonic operation mode
3.2. Idealized Class F mode
3.3. Class F with maximally flat waveforms
3.4. Class F with quarterwave transmission line
3.5. Effect of saturation resistance and shunt capacitance
3.6. Load networks with lumped elements
3.7. Load networks with transmission lines
3.8. LDMOSFET power amplifier design examples
3.9. Practical RF and microwave Class F power amplifiers
References
4. Inverse Class F mode
4.1. Biharmonic operation mode
4.2. Idealized inverse Class F mode
4.3. Inverse Class F with quarterwave transmission line
4.4. Load networks with lumped elements
4.5. Load networks with transmission lines<BR id=

Details

No. of pages:
448
Language:
English
Copyright:
© Newnes 2007
Published:
Imprint:
Newnes
eBook ISBN:
9780080550640
Hardcover ISBN:
9780750679626

About the Author

Andrei Grebennikov

Dr. Andrei Grebennikov is a Senior Member of the IEEE and a Member of Editorial Board of the International Journal of RF and Microwave Computer-Aided Engineering. He received his Dipl. Ing. degree in radio electronics from the Moscow Institute of Physics and Technology and Ph.D. degree in radio engineering from the Moscow Technical University of Communications and Informatics in 1980 and 1991, respectively. He has obtained a long-term academic and industrial experience working with the Moscow Technical University of Communications and Informatics, Russia, Institute of Microelectronics, Singapore, M/A-COM, Ireland, Infineon Technologies, Germany/Austria, and Bell Labs, Alcatel-Lucent, Ireland, as an engineer, researcher, lecturer, and educator. He lectured as a Guest Professor in the University of Linz, Austria, and presented short courses and tutorials as an Invited Speaker at the International Microwave Symposium, European and Asia-Pacific Microwave Conferences, Institute of Microelectronics, Singapore, and Motorola Design Centre, Malaysia. He is an author or co-author of more than 80 technical papers, 5 books, and 15 European and US patents.

Affiliations and Expertise

Bell Labs, Alcatel-Lucent, Ireland

Nathan Sokal

In 1989, Mr. Sokal was elected a Fellow of the IEEE, for his contributions to the technology of high-efficiency switching-mode power conversion and switching-mode RF power amplification. In 2007, he received the Microwave Pioneer award from the IEEE Microwave Theory and Techniques Society, in recognition of a major, lasting, contribution  development of the Class-E RF power amplifier. In 2011, he was awarded an honorary doctorate from the Polytechnic University of Madrid, Spain, for developing the high-efficiency switching-mode Class-E RF power amplifier In 1965, he founded Design Automation, Inc., a consulting company doing electronics design review, product design, and solving ‘‘unsolvable’’ problems for equipment-manufacturing clients. Much of that work has been on high-efficiency switching-mode RF power amplifiers at frequencies up to 2.5 GHz, and switching-mode dc-dc power converters. He holds eight patents in power electronics, and is the author or co-author of two books and approximately 130 technical papers, mostly on high-efficiency generation of RF power and dc power. During 1950–1965, he held engineering and supervisory positions for design, manufacture, and applications of analog and digital equipment. He received B.S. and M.S. degrees in Electrical Engineering from the Massachusetts Institute of Technology, Cambridge, Massachusetts, in 1950. He is a Technical Adviser to the American Radio Relay League, on RF power amplifiers and dc power supplies, and a member of the Electromagnetics Society, Eta Kappa Nu, and Sigma Xi honorary professional societies.

Affiliations and Expertise

Design Automation, Auburndale, MA, USA

Marc Franco

Marc J. Franco holds a Ph.D. degree in electrical engineering from Drexel University, Philadelphia. He is currently with RFMD, Technology Platforms, Component Advanced Development, Greensboro, North Carolina, USA, where he is involved with the design of advanced RF integrated circuits and integrated front-end modules. He was previously with Linearizer Technology, Inc. Hamilton, New Jersey, where he led the development of advanced RF products for commercial, military and space applications. Dr. Franco is a regular reviewer for the Radio & Wireless Symposium, the European Microwave Conference and the MTT International Microwave Symposium. He is a member of the MTT-17 HF-VHF-UHF Technology Technical Coordination Committee and has co-chaired the IEEE Topical Conference on Power Amplifiers for Radio and Wireless Applications. He is a Senior Member of the IEEE. His current research interests include high-efficiency RF power amplifiers, nonlinear distortion correction, and electromagnetic analysis of structures.

Affiliations and Expertise

RFMD, Greensboro, NC, USA

Reviews

A majority of people now have a digital mobile device whether it be a cell phone, laptop, or blackberry. Now that we have the mobility we want it to be more versatile and dependable; RF power amplifiers accomplish just that. These amplifiers take a small input and make it stronger and larger creating a wider area of use with a more robust signal. Switching mode RF amplifiers have been theoretically possible for decades, but were largely impractical because they distort analog signals until they are unrecognizable. However, distortion is not an issue with digital signals—like those used by WLANs and digital cell phones—and switching mode RF amplifiers have become a hot area of RF/wireless design. This book explores both the theory behind switching mode RF amplifiers and design techniques for them.