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List of Contributors
Part A Introduction
Chapter 1 Interfaces and Devices
II. Electrical Properties of Interfaces
III. Structure of Interfaces
IV. Reproducibility and Stability
V. Summary and Prognosis
Part B Structure
Chapter 2 Characterization of the Si - SiO2 Interface
II. Historical Background
III. Oxidation and Diffusion
IV. Interface Morphology
V. Interface Traps
VI. Theoretical Models
Chapter 3 Fundamental Studies of Interfaces: The Unified Defect Model and Its Application to GaAs Integrated Circuits
II. New Experimental Techniques to Study Surfaces and Interfaces on an Atomic Scale: Synchrotron Radiation
III. Strategy Used in This Work
IV. The Unified Defect Model for III-V Interfaces and Its Origin
V. III-V Ternary and Quaternary Alloys
VI. Scientifically Engineered Schottky Barrier Heights
VII. Ohmic Contacts
VIII. Chemistry and Intermixing at III-V Semiconductor-Metal Interfaces
IX. Other Applications to VLSI Devices
X. Summary and Conclusions
Part C Electronic Properties
Chapter 4 Heterostructure Device Physics: Band Discontinuities as Device Design Parameters
I. Introduction: Why Heterostructures?
II. Band Offsets
III. Band Bending and Space Charge Layers at Abrupt Heterojunctions
IV. The High Electron Mobility Transistor (HEMT): A Device Example
Chapter 5 Interface Constraints on MESFET and MISFET Architectures
II. Models for FET
III. Surfaces and Interfaces
IV. Metal-Semiconductor Interfaces
V. Chemical Reactions Between Metals and III-V Compounds
VI. The GaAs Schottky Barrier
VII. Channel-Substrate Interface
VIII. Ohmic Contacts
IX. Dielectric III-V Compound Semiconductor Interfaces
X. Surface and Interfacial Properties of Ternary and Quaternary III-V Alloys
XI. Instabilities in MISFET
Chapter 6 The Role of Boundary Conditions to Near-and Submicrometer-Length Gallium Arsenide Structures
II. Transport through Moment of the Boltzmann Transport Equation
III. Solution of the Governing Equations
Appendix. Dimensionless Equations Used in the Numerical Simulations
Chapter 7 Carrier Transport at the Si - SiO2 Interface
List of Symbols
III. Carrier Velocity Measurements
IV. A Model for Electron Velocity in Silicon
V. Charge Packet Transport and Broadening
Contents of Other Volumes
VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics.
This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions.
Engineers, designers, and scientists will find the book very useful.
- No. of pages:
- © Academic Press 1985
- 8th May 1985
- Academic Press
- eBook ISBN:
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