Stress and Strain in Epitaxy: Theoretical Concepts, Measurements and Applications - 1st Edition - ISBN: 9780444508652, 9780080541860

Stress and Strain in Epitaxy: Theoretical Concepts, Measurements and Applications

1st Edition

Authors: J.-P. Deville M. Hanbücken
Paperback ISBN: 9780444508652
eBook ISBN: 9780080541860
Imprint: Elsevier Science
Published Date: 3rd July 2001
Page Count: 332
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Description

Foreword. Organizers and Sponsors. Introduction (R. Kern). Some elastic effects in crystal growth (P. Müller, R. Kern). Introduction to the atomic structure of surfaces: a theoretical point of view (M.C.Desjonqueres, D. Spanjaard). Dislocations and stress relaxation in heteroepitaxial films (L. Kubin). An atomistic approach for stress relaxation in materials (G. Treglia). Ab initio study of the structural stability of thin films (A. Pastel). Stress, strain and chemical relativity: a theoretical analysis (P. Sate). Strain measurements in ultra-thin films using RHEED and X-ray techniques (B. Gilles). Measurements of displacement and strain by high resolution transmission electron microscopy (M. Hytch). Stress measurements of atomic layers and at surfaces (D. Sander). Physico-chemical analysis on a micro- and nanometer scale (N. Brun). STM spectroscopy on semiconductors (D. Stievenard). Spatially resolved surface spectroscopy (J. Cazaux).

Table of Contents

Foreword. Organizers and Sponsors. Introduction (R. Kern). Some elastic effects in crystal growth (P. Müller, R. Kern). Introduction to the atomic structure of surfaces: a theoretical point of view (M.C.Desjonqueres, D. Spanjaard). Dislocations and stress relaxation in heteroepitaxial films (L. Kubin). An atomistic approach for stress relaxation in materials (G. Treglia). Ab initio study of the structural stability of thin films (A. Pastel). Stress, strain and chemical relativity: a theoretical analysis (P. Sate). Strain measurements in ultra-thin films using RHEED and X-ray techniques (B. Gilles). Measurements of displacement and strain by high resolution transmission electron microscopy (M. Hytch). Stress measurements of atomic layers and at surfaces (D. Sander). Physico-chemical analysis on a micro- and nanometer scale (N. Brun). STM spectroscopy on semiconductors (D. Stievenard). Spatially resolved surface spectroscopy (J. Cazaux).

Details

No. of pages:
332
Language:
English
Copyright:
© Elsevier Science 2001
Published:
Imprint:
Elsevier Science
eBook ISBN:
9780080541860

About the Author

J.-P. Deville

M. Hanbücken

Affiliations and Expertise

CRMC2 CNRS, Campus de Luminy, 13288 Marseille Cedex 9, France