2. Electronic Silicon
3. Solar Silicon
5. Silicon Carbide
9. CdTe and CdZnTe
10. II-sulphides and II-selenides
Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state of the art growth of bulk semiconductors. It is not only a valuable update of the body of information on crystal growth of well-established electronic materials such as silicon, III-V, II-VI and IV-VI semiconductors, but includes chapters on novel semiconductors including wide bandgap oxides (ZnO Ga2O3, In2O3, Al2O3), nitrides (AIN and GaN) and diamond.
Each chapter focuses in-depth on a material, providing a comprehensive overview including:
- Applications and requirements of the electronic material
- Thermodynamic properties and definition of usable growth methods
- Schematics of growth methods for the material
- Description of up-to-date growth technologies and processes
- Tailoring of crystal properties via growth parameters
- Benefits of computer modelling
- Doping issues and reduction of defect density
- State-of-the art of the material
- New trends and future developments
- Latest research and most comprehensive overview of both standard and novel semiconductors
- Systematic examination of important electronic materials including: applications, growth methods, properties, technologies and defect and doping issues
- Close look at emerging materials including wide bandgap oxides, nitrides, and diamond
Material scientists and researchers, academic and industry crystal growth experts, academic and industry semiconductor device experts, and physicists
- No. of pages:
- © Woodhead Publishing 2019
- 1st September 2018
- Woodhead Publishing
- Paperback ISBN:
Roberto Fornari studied Solid State Physics at the University of Parma, Italy. He is presently director of the Leibniz Institute for Crystal Growth (IKZ) in Berlin and holds the Chair of Crystal Growth at the Physics Dept. of the Humboldt University Berlin (joint appointment). Before moving to Germany in 2003 he has worked over twenty years as research scientist at the Institute for Electronic and Magnetic Materials (MASPEC, later IMEM) of the Italian CNR where he led different research projects on growth and thermal processing of bulk III-V semiconductors, HVPE and MOVPE of Nitrides, characterization of semiconductors by electrical and optical techniques. He has authored/co-authored about 170 scientific papers, seven patents and different book chapters. He has edited books and proceedings on crystal growth and semiconductors physics and was subject editor of the Encyclopaedia of Materials published by Pergamon Press in 2001.He is presently member of the editorial board of J.Cryst.Growth, Cryst. Res.Technol. and J. Optoelectron. Advanced. Materials.
He has been Chairman of the IUCr Commission for Crystal Growth and Characterization of Materials from 1999 to 2005 and then member till 2008. From 2001 to 2007 he has been in the Executive Committee of the Intern. Org. for Crystal Growth and he presently serves as Vice-President of this organization.
Roberto Fornari, Institute of Physics, humboldt University, Berlin, Germany.